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Winbond Electronics Corporation W9816G6JH-5 TR

Part No.:
W9816G6JH-5 TR
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
50-TSOP (0.400", 10.16mm Width)
Datasheet:
AetrixW9816G6JH-5 TR.pdf
Description:
IC DRAM 16MBIT PAR 50TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,326

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Product details

Overview

W9816G6JH-5 TR from Winbond Electronics is a 512K × 2 banks × 16-bit synchronous DRAM (SDRAM) operating at 200 MHz with CAS Latency 3, 3.3V ±0.3V supply, and LVTTL interface-designed for high-bandwidth main memory in embedded controllers, industrial HMIs, and legacy PC-compatible systems requiring burst-oriented sequential access.

For engineers reviewing the W9816G6JH-5 TR datasheet, W9816G6JH-5 TR pinout, W9816G6JH-5 TR application, or W9816G6JH-5 TR equivalent, key selection criteria include its TSOP-II-50 package, 200 MHz/CL3 timing grade, self-refresh current ≤2 mA, dual-bank interleaving capability, and compatibility with standard SDRAM controllers supporting burst lengths of 1–8 and auto-precharge.

Technical Context

This SDRAM implements fully synchronous operation latched on the rising edge of CLK, with programmable Mode Register control over burst length (1, 2, 4, 8, full page), burst type (sequential or interleave), and CAS latency (2 or 3). It supports bank interleaving to hide precharge delays and enables seamless multi-page access across two independent 524,288-word banks.

Command decoding relies on RAS/CAS/WE/CS combinations synchronized to CLK, with CKE enabling power-down, clock suspend, and self-refresh modes. The device uses separate VDDQ/VSSQ rails for I/O buffers to improve noise immunity, and LDQM/UDQM pins provide per-byte write masking with zero-latency blocking in write cycles.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization524,288 words × 2 banks × 16 bits = 16 Mbit total capacity; enables dual-bank concurrency for reduced effective latency.
Max Clock Frequency200 MHz (−5 speed grade); supports 400 MT/s data rate with CL3, meeting PC100/PC133 timing compliance.
CAS LatencyConfigurable to 2 or 3 clock cycles; CL3 mode ensures stable operation at 200 MHz with tAC ≤ 2.5 ns.
Burst LengthProgrammable 1, 2, 4, 8, or full-page; allows optimized bandwidth utilization for sequential streaming or random-access patterns.
Refresh Requirement2,048 refresh cycles per 32 ms; guarantees data retention without external refresh controller intervention.
Supply Voltage3.3V ±0.3V (−5 grade); compatible with legacy 3.3V logic families and eliminates level-shifting in SDRAM controller interfaces.
Self-Refresh Current≤2 mA; enables low-power retention during system sleep states without host controller activity.
Interface StandardLVTTL-compatible inputs/outputs; interoperable with FPGA, ASIC, and microcontroller SDRAM controllers using standard timing margins.

Pinout & Package

W9816G6JH-5 TR is housed in a RoHS-compliant, lead-free 50-pin TSOP-II (400 mil) package with exposed pad not present; pin layout follows JEDEC-standard SDRAM footprint for drop-in compatibility with existing PCB designs.

Pin/TerminalCircuit RoleDesign Meaning
A0–A10Address InputMultiplexed row/column address lines; A0–A10 used for row address, A0–A7 for column address in burst operations.
BABank SelectSelects one of two internal banks during ACTIVATE or READ/WRITE command execution.
DQ0–DQ15Data I/O16-bit bidirectional data bus; supports byte masking via LDQM/UDQM for partial writes.
CSChip SelectEnables command decoder; when high, all commands are ignored and prior operation continues.
RAS, CAS, WECommand ControlCombined with CS and CLK edge to define command type (e.g., ACTIVATE, READ, WRITE, PRECHARGE).
CLKSystem ClockRising-edge-triggered master clock; all commands and data transfers synchronized to this signal.
CKEClock EnableControls entry/exit from Power Down, Clock Suspend, and Self-Refresh modes; low disables internal clocking.
LDQM / UDQMI/O MaskLow-active byte masks: LDQM controls DQ0–DQ7, UDQM controls DQ8–DQ15; blocks write data or places outputs in Hi-Z.
VDD / VSSCore Power / GroundSupplies logic and input buffer circuitry; must ramp simultaneously during power-up to avoid latch-up.
VDDQ / VSSQI/O Power / GroundSeparate analog rail for output drivers; improves signal integrity and reduces switching noise coupling into core logic.
NCNo ConnectPins 33 and 37 are unconnected; must be left floating or tied to ground per board design rules.

Key Features

FeatureDesign Value
Programmable Burst ModeSupports sequential or interleave addressing for burst lengths 1–8, enabling optimal cache-line alignment and DMA efficiency.
Auto-Precharge CapabilityAutomatically initiates bank precharge after read/write completion when A10 is asserted, eliminating manual precharge overhead in controller firmware.
Dual-Bank ArchitectureTwo independent 524,288-word banks allow interleaved access-e.g., activating Bank 1 while reading Bank 0-to hide tRP and tRCD delays.
Low-Power Self-RefreshEnters autonomous refresh mode with ≤2 mA current draw and no external clock or command activity required, ideal for battery-backed systems.
LVTTL Interface ComplianceMeets JEDEC JESD8-12A voltage thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V), ensuring reliable interfacing with 3.3V FPGAs and microcontrollers.
TSOP-II-50 FootprintStandard 50-pin, 0.5 mm pitch package with 400 mil width; compatible with legacy SDRAM layouts and automated assembly processes.

Applications

Industrial HMI Memory BufferLegacy PC-Compatible Main Memory

Use Scenario: Real-time display buffering in factory-floor HMIs with ARM9 or ColdFire-based controllers running Linux or VxWorks.

IC Role / Device Role / Timing Role: Primary working memory for GUI frame buffers and application code execution, accessed via standard SDRAM controller IP.

Use Value: 200 MHz/CL3 timing delivers 400 MB/s peak bandwidth sufficient for 1024×768 RGB565 video updates at 60 Hz with minimal CPU overhead.

Use Scenario: Main memory expansion in x86-based industrial PCs using VIA or Intel 440BX chipsets.

IC Role / Device Role / Timing Role: Drop-in replacement for PC100/PC133-compliant SDRAM modules in embedded motherboards with fixed 3.3V supply.

Use Value: Full pin-and-timing compatibility with JEDEC-standard SDRAM controllers eliminates need for BIOS or controller reconfiguration.

Medical Imaging Data CacheNetwork Appliance Packet Buffer

Use Scenario: Temporary storage for DICOM image tiles during ultrasound or X-ray preprocessing in portable diagnostic devices.

IC Role / Device Role / Timing Role: High-speed scratchpad memory for FPGA-accelerated image filtering pipelines with burst-length-8 streaming reads.

Use Value: Dual-bank interleaving sustains >300 MB/s sustained throughput during concurrent tile fetch and processed-data writeback.

Use Scenario: Frame buffering in Layer 2/L3 switches and firewalls based on MIPS or PowerPC SoCs with integrated SDRAM controllers.

IC Role / Device Role / Timing Role: Shared packet memory for ingress/egress queues, supporting simultaneous read-modify-write operations across banks.

Use Value: Auto-precharge and burst-stop commands reduce command overhead, improving packet forwarding latency under 100% line-rate traffic.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SDRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IS42S16100E-5BLISame 512K×2×16 organization, 200 MHz/CL3, TSOP-II-54 package (54-pin vs. 50-pin); requires PCB footprint revision.Industrial temperature range (−40°C to +85°C) vs. W9816G6JH-5 TR's 0°C to +70°C; suitable for extended-environment deployments.Select if wider temperature range and higher pin count are acceptable; verify trace routing for extra pins 51–54.
MT48LC16M16A2P-6A:G16 Mbit (1M×16), 166 MHz/CL3, 50-pin TSOP-II; lower max frequency and different density mapping (1M×16 vs. 512K×2×16).Designed for DDR1 systems but backward-compatible in single-data-rate mode; requires controller configuration change for timing parameters.Choose only if system controller supports configurable SDRAM timing registers and can accommodate 166 MHz maximum clock.

Compared with IS42S16100E-5BLI and MT48LC16M16A2P-6A:G, the W9816G6JH-5 TR offers exact 50-pin TSOP-II compatibility and guaranteed 200 MHz operation within commercial temperature range-making it optimal for cost-sensitive, volume-manufactured embedded systems where footprint and timing margin are critical.

Availability

W9816G6JH-5 TR is available at Aetrix Electronics and suitable for industrial HMIs, legacy PC-compatible main memory, and medical imaging data cache applications requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for W9816G6JH-5 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR Flash, SDRAM, and mobile DRAM for industrial, automotive, and consumer markets.

The W9816G6JH series belongs to Winbond's legacy SDRAM product line designed for cost-effective, high-reliability main memory in resource-constrained embedded systems where compatibility with mature controller IP and long-term supply stability are prioritized over DDR bandwidth.

FAQ

What is the maximum operating frequency and CAS latency supported by the W9816G6JH-5 TR?

The W9816G6JH-5 TR is rated for 200 MHz operation with CAS Latency 3 (CL3) at 3.3V ±0.3V supply. Its AC characteristics guarantee tAC ≤ 2.5 ns and tRC ≥ 10 ns under these conditions. CL2 is also supported but not validated at 200 MHz; CL3 is the default and recommended setting for full-speed operation. This timing grade aligns with PC100/PC133 SDRAM standards.

Does the W9816G6JH-5 TR support auto-precharge and how is it enabled?

Yes, the W9816G6JH-5 TR supports auto-precharge. It is enabled by asserting A10 high during a READ or WRITE command cycle. When active, the SDRAM automatically initiates precharge after the burst completes-two clocks before end-of-burst for writes (tWR delay), and prior to final data output for reads. This eliminates the need for explicit PRECHARGE commands in burst-heavy workloads, reducing controller overhead in the W9816G6JH-5 TR implementation.

What package type and pin count does the W9816G6JH-5 TR use?

The W9816G6JH-5 TR uses a 50-pin Thin Small Outline Package Type II (TSOP-II) with 400 mil body width, lead-free construction, and RoHS compliance. Its pinout matches JEDEC-standard SDRAM footprints, including dedicated VDDQ/VSSQ rails for I/O buffers and dual DQM pins for byte-level write masking-ensuring mechanical and electrical compatibility with existing SDRAM layouts.

Can the W9816G6JH-5 TR operate in self-refresh mode and what is its typical current draw?

Yes, the W9816G6JH-5 TR supports self-refresh mode entered via the SELF-REFRESH command (CS=RAS=CAS=WE=low, CKE=low). In this state, the device autonomously maintains memory contents without external clock or command input. Its maximum self-refresh current is specified as 2 mA at 25°C, enabling ultra-low-power retention in battery-backed or sleep-mode applications using the W9816G6JH-5 TR.

What are the valid burst length options and how are they configured for the W9816G6JH-5 TR?

The W9816G6JH-5 TR supports burst lengths of 1, 2, 4, 8, and full page, configured via the Mode Register Set (MRS) command. Burst type (sequential or interleave) and length are encoded in address bits A0–A2 during MRS execution. Sequential mode increments column addresses linearly; interleave mode toggles LSBs for cache-friendly access patterns. These settings persist until reprogrammed, allowing dynamic adaptation to workload characteristics in the W9816G6JH-5 TR.

W9816G6JH-5 TR Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
50-TSOP (0.400", 10.16mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Not For New Designs
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM
Memory Size:
16Mbit
Memory Organization:
1M x 16
Memory Interface:
Parallel
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
-
Access Time:
4.5 ns
Voltage - Supply:
3V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
50-TSOP II

W9816G6JH-5 TR FAQ

1.How can I place an order for W9816G6JH-5 TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W9816G6JH-5 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W9816G6JH-5 TR reliable?

The price and inventory of W9816G6JH-5 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W9816G6JH-5 TR is usually 5 days.

3.What payment methods are accepted for W9816G6JH-5 TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W9816G6JH-5 TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W9816G6JH-5 TR?

W9816G6JH-5 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W9816G6JH-5 TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W9816G6JH-5 TR?

For technical support, including W9816G6JH-5 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W9816G6JH-5 TR requirements.

6.How does Aetrix verify that W9816G6JH-5 TR is sourced from the original manufacturer or authorized distributors?

All W9816G6JH-5 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W9816G6JH-5 TR meets industry standards.

7.What is the process for return or replacement of W9816G6JH-5 TR?

All W9816G6JH-5 TR units undergo pre-shipment inspection (PSI). If there is an issue with W9816G6JH-5 TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W9816G6JH-5 TR part is unused and in its original packaging.

Return procedure for W9816G6JH-5 TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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