Winbond Electronics Corporation W9816G6JH-7 TR
- Part No.:
- W9816G6JH-7 TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 50-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
W9816G6JH-7 TR.pdf
- Description:
- IC DRAM 16MBIT LVTTL 50TSOP II
- Quantity:
- Payment:

- Shipping:

Inventory:2,710
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
W9816G6JH-7 TR from Winbond Electronics is a 512K × 2 banks × 16-bit synchronous DRAM (SDRAM) operating at up to 143 MHz with CAS Latency 3, 2.7–3.6 V supply, LVTTL interface, and 50-pin TSOP II package. It delivers 228.8 Mwords/s bandwidth and supports burst lengths of 1/2/4/8/full page for embedded main memory in industrial controllers and legacy display subsystems.
For engineers reviewing the W9816G6JH-7 TR datasheet, W9816G6JH-7 TR pinout, W9816G6JH-7 TR application, or W9816G6JH-7 TR equivalent, key selection criteria include its -7 speed grade (143 MHz/CL3), industrial-grade thermal range compatibility (0°C to 70°C), TSOP II mechanical footprint, and support for auto-precharge, self-refresh, and interleaved bank access - all critical for cost-sensitive, non-DDR memory upgrades.
Technical Context
This SDRAM implements a fully synchronous architecture with clocked command decoding, supporting sequential and interleave burst addressing modes. Its dual-bank structure enables row activation overlap to hide precharge latency, while programmable Mode Register controls burst length, CAS latency, and burst type.
Functional operation relies on precise timing coordination: Bank Activate requires tRCD ≥ 20 ns before Read/Write; Auto-precharge initiates internal precharge prior to burst completion based on CL; and Self Refresh mode suspends external clocks while maintaining data integrity using internal refresh counters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 524,288 words × 2 banks × 16 bits = 16 Mbit total capacity; enables efficient page-mode access across two independent banks. |
| Max Clock Frequency | 143 MHz (−7 grade); defines maximum sustained data transfer rate of 228.8 Mwords/s under CL3 timing. |
| CAS Latency | CL = 3 cycles; determines minimum read access delay from column address strobe to first valid DQ output. |
| Burst Length | Programmable 1, 2, 4, 8, or full-page; reduces address overhead and improves sequential throughput in graphics or buffer applications. |
| Supply Voltage | 2.7 V to 3.6 V (VDD/VDDQ); supports mixed-voltage system integration with LVTTL-compatible I/O levels. |
| Refresh Rate | 2K cycles / 32 ms (64 ms average interval); ensures data retention without host intervention during active or self-refresh modes. |
| Operating Temperature | 0°C to 70°C; validated for commercial industrial environments, excluding extended temperature variants like −7I. |
Pinout & Package
Packaged in 50-pin, 400-mil TSOP II (Thin Small Outline Package, Type II) with lead-free, RoHS-compliant construction. Pin pitch is 0.5 mm; body width is 10.16 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Input | Multiplexed row/column address lines; A0–A10 used for row address, A0–A7 for column address in burst operations. |
| BA | Bank Select | 2-bit input selecting one of two internal banks for activation or access; enables interleaving between banks. |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; LDQM/UDQM control byte masking for partial writes and high-impedance output during reads. |
| CS, RAS, CAS, WE | Command Control | Four active-low control signals decoded synchronously on CLK rising edge to execute bank activate, read, write, precharge, and mode register set. |
| CLK, CKE | Clock Interface | CLK provides synchronous timing reference; CKE enables/disables internal clock domain - low entry triggers Power Down or Self Refresh. |
| VDD / VSS | Core Power/Ground | Separate 2.7–3.6 V supply and ground for logic circuitry; decoupling required per JEDEC SDRAM layout guidelines. |
| VDDQ / VSSQ | I/O Power/Ground | Dedicated power/ground for DQ buffers to isolate noise-sensitive output drivers from core logic switching noise. |
| LDQM / UDQM | Data Mask | Low-active inputs masking lower/upper 8 bits of DQ bus during writes or forcing DQ outputs to Hi-Z during reads with 2-cycle latency. |
Key Features
| Feature | Design Value |
|---|---|
| Interleaved Bank Access | Enables continuous data streaming by alternating read/write operations between Bank #0 and Bank #1, hiding tRP and tRCD delays. |
| Auto-Precharge Support | Automatically initiates bank precharge after burst completion when A10 = high, reducing software overhead in burst-intensive applications. |
| Self-Refresh Mode | Maintains data integrity with zero external clock activity and minimal current draw (≤2 mA), ideal for low-power suspend states. |
| LVTTL-Compatible Interface | Direct connection to legacy microcontrollers and FPGAs without level-shifting; VIH = 2.0 V min, VIL = 0.8 V max at 3.3 V operation. |
| Programmable Burst Mode | Configurable sequential or interleave addressing via Mode Register, optimizing access patterns for video frame buffers or packet FIFOs. |
Applications
| Industrial HMI Display Controller | Legacy Network Router Buffer |
|---|---|
Use Scenario: Frame buffer memory for 800×480 TFT-LCD panels in factory-floor HMIs requiring stable 143 MHz pixel clock alignment. IC Role / Device Role / Timing Role: Primary SDRAM serving as double-buffered graphics memory; synchronized to controller's CLK and coordinated with RAS/CAS/WE command sequencing. Use Value: Dual-bank interleaving sustains >180 Mwords/s effective bandwidth for smooth 60 Hz UI updates without visible tearing or stutter. | Use Scenario: Packet buffering in MIPS-based Layer 3 switches handling 10/100 Ethernet traffic with deterministic latency requirements. IC Role / Device Role / Timing Role: Shared system memory for ingress/egress queue management; accessed via DMA with burst-length-4 reads/writes. Use Value: Auto-precharge eliminates explicit precharge commands between packet bursts, reducing CPU overhead by ~12% in throughput-critical forwarding paths. |
| Medical Diagnostic Equipment UI | Automated Test Equipment (ATE) Pattern Memory |
Use Scenario: User interface rendering engine in ultrasound machines where EMI resilience and thermal stability are mandated over 0–70°C. IC Role / Device Role / Timing Role: Dedicated display memory isolated on VDDQ/VSSQ rails; controlled via fixed CL3 timing to guarantee jitter-free video timing. Use Value: Separate I/O power/ground planes suppress coupling noise into analog front-end circuits, meeting IEC 60601-1 EMC limits. | Use Scenario: Storage of digital stimulus/response vectors in boundary-scan test systems requiring deterministic access to 16-bit-wide pattern sets. IC Role / Device Role / Timing Role: High-reliability memory mapped directly to test controller's address space; operated in sequential burst mode for vector streaming. Use Value: Full-page burst capability loads 512-word test sequences in ≤3.5 µs, enabling sub-millisecond pattern switching during high-speed scan operations. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS42S16100E-7TLI | Same 512K×2×16 organization, 143 MHz/CL3, but uses 54-pin TSOP II; higher IDD2 current (55 mA vs. 45 mA typical). | Valid for drop-in replacement only if PCB pad layout accommodates 54-pin footprint and revised trace routing. | Select when needing second-source assurance with identical timing but accepting minor layout revision. |
| MT48LC16M16A2P-75:C | 16M×16 configuration (256 Mbit), 143 MHz/CL3, 54-pin TSOP II; requires different address mapping (A11 needed) and higher VDD tolerance (3.0–3.6 V). | Not pin-compatible; suitable only for new designs targeting higher density with backward-compatible command protocol. | Choose for future-proofing where board space allows larger memory and firmware supports extended addressing. |
Compared with IS42S16100E-7TLI and MT48LC16M16A2P-75:C, the W9816G6JH-7 TR offers identical speed-grade timing and TSOP II mechanical compatibility with lower power consumption and simpler 50-pin routing - making it optimal for cost-constrained, thermally stable industrial replacements where density and pin count must match legacy layouts.
Availability
W9816G6JH-7 TR is available at Aetrix Electronics and suitable for industrial HMI display controllers, legacy network router buffers, medical diagnostic UI subsystems, and automated test equipment pattern memory requiring stable component supply, long-lifecycle support, and RoHS-compliant TSOP packaging.
Supply support for W9816G6JH-7 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR Flash, PSRAM, and SDRAM for industrial, automotive, and consumer applications.
The W9816G6JH series belongs to Winbond's legacy SDRAM product line designed specifically for cost-sensitive, non-DDR memory upgrades in mature embedded platforms where pin compatibility, thermal robustness, and long-term supply stability are prioritized over bandwidth scaling.
FAQ
What is the maximum operating frequency and CAS latency supported by the W9816G6JH-7 TR?
The W9816G6JH-7 TR is rated for a maximum clock frequency of 143 MHz with CAS Latency 3 (CL3). This timing specification is guaranteed across the full commercial temperature range (0°C to 70°C) and defines the minimum number of clock cycles between column address strobe and first valid data output. The W9816G6JH-7 TR does not support CL2 operation - only CL3 is validated for this speed grade.
Does the W9816G6JH-7 TR support auto-precharge, and how is it enabled?
Yes, the W9816G6JH-7 TR supports auto-precharge. It is enabled by asserting A10 = high during a Read or Write command cycle. When activated, the device automatically initiates precharge of the accessed bank before burst completion - eliminating the need for a separate Precharge command. This feature is confirmed in Section 7.14 of the W9816G6JH-7 TR datasheet and applies identically across all burst lengths except full-page mode.
What package type and pin count does the W9816G6JH-7 TR use?
The W9816G6JH-7 TR uses a 50-pin, 400-mil TSOP II (Thin Small Outline Package, Type II) with lead-free, RoHS-compliant construction. Pin pitch is 0.5 mm and body width is 10.16 mm. This matches JEDEC standard MO-153AC, and the pinout is fully documented in Section 4 (Pin Configuration) and Section 5 (Pin Description) of the W9816G6JH-7 TR datasheet.
Can the W9816G6JH-7 TR operate in self-refresh mode, and what is the typical current draw?
Yes, the W9816G6JH-7 TR supports self-refresh mode, entered via the Self-Refresh Command (CS/RAS/CAS/WE = L/L/L/H with CKE = L). In this mode, the internal refresh counter maintains data integrity without external clock or command activity. The datasheet specifies maximum self-refresh current as 2 mA, verified across the 0°C to 70°C operating range for the W9816G6JH-7 TR speed grade.
What are the voltage requirements for VDD and VDDQ on the W9816G6JH-7 TR?
The W9816G6JH-7 TR requires VDD and VDDQ supplies within 2.7 V to 3.6 V, with both rails recommended to be tied together unless noise isolation is required. DC operating conditions specify VDD/VDDQ = 3.3 V ±0.3 V nominal, and absolute maximum ratings cap voltage at VDD + 0.5 V (≤4.6 V). These values are explicitly defined in Section 9.2 of the W9816G6JH-7 TR datasheet.
W9816G6JH-7 TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 50-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- LVTTL
- Clock Frequency:
- 143 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 5 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 50-TSOP II
W9816G6JH-7 TR FAQ
1.How can I place an order for W9816G6JH-7 TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W9816G6JH-7 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W9816G6JH-7 TR reliable?
The price and inventory of W9816G6JH-7 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W9816G6JH-7 TR is usually 5 days.
3.What payment methods are accepted for W9816G6JH-7 TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W9816G6JH-7 TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W9816G6JH-7 TR?
W9816G6JH-7 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W9816G6JH-7 TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W9816G6JH-7 TR?
For technical support, including W9816G6JH-7 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W9816G6JH-7 TR requirements.
6.How does Aetrix verify that W9816G6JH-7 TR is sourced from the original manufacturer or authorized distributors?
All W9816G6JH-7 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W9816G6JH-7 TR meets industry standards.
7.What is the process for return or replacement of W9816G6JH-7 TR?
All W9816G6JH-7 TR units undergo pre-shipment inspection (PSI). If there is an issue with W9816G6JH-7 TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W9816G6JH-7 TR part is unused and in its original packaging.
Return procedure for W9816G6JH-7 TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W9816G6JH-7 TR Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

