Winbond Electronics Corporation W9825G2JB-6

Overview

W9825G2JB-6 from Winbond is a 4 M × 4 banks × 16-bit synchronous DRAM (SDRAM) operating at 166 MHz with CAS Latency 3 or 133 MHz with CAS Latency 2, supporting burst lengths of 1/2/4/8/full page, and packaged in an 8×8 mm² TFBGA-54. It delivers up to 166 million words per second and is designed for main memory in embedded industrial controllers and automotive infotainment head units requiring stable timing and low-power self-refresh.

For engineers reviewing the W9825G2JB-6 datasheet, W9825G2JB-6 pinout, W9825G2JB-6 application, or W9825G2JB-6 equivalent, key selection criteria include its 3.3V LVTTL interface, 8K refresh cycles/64 ms requirement, programmable mode register for burst/latency configuration, and TFBGA-54 ball layout with separate VDDQ/VSSQ for I/O noise immunity.

Technical Context

This SDRAM implements a four-bank architecture with interleaved bank access to hide precharge delays, enabling continuous data streaming across pages. Its command decoder interprets RAS/CAS/WE/CS on CLK rising edges to execute bank activate, read/write, auto-precharge, self-refresh, and power-down operations.

Internal timing is governed by tRCD (≥20 ns), tRP (≥20 ns), tRC (≥60 ns), and tDAL (tWR + tRP) for auto-precharge write-to-active recovery. The mode register configures burst type (sequential/interleave), length, and CAS latency, while LDQM/UDQM provide per-byte write masking and output tri-state control during reads.

Key Specifications

Pinout & Package

Packaged in RoHS-compliant TFBGA-54 (8 mm × 8 mm, 0.8 mm pitch), with ball pitch optimized for high-density PCB layouts and thermal performance in memory subsystems.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SDRAM applications.

Compared with W9825G2JB-6, IS42S16400F-6BLI offers wider temperature tolerance and lower self-refresh current, while MT48LC4M16A2P-6A trades TFBGA miniaturization and auto-precharge automation for TSOP compatibility and mature ecosystem support.

Availability

W9825G2JB-6 is available at Aetrix Electronics and suitable for industrial PLC memory buffers, automotive infotainment display caches, and medical imaging data acquisition systems requiring stable component supply across multi-year production cycles.

Supply support for W9825G2JB-6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR Flash, DDR SDRAM, and mobile LPDDR products.

The W9825GxJB series targets cost-sensitive, high-reliability embedded systems requiring industrial-grade SDRAM with robust refresh management and flexible burst control - optimized for automotive, medical, and factory automation applications.

FAQ

What is the maximum supported clock frequency for W9825G2JB-6?

W9825G2JB-6 supports up to 166 MHz operation at CAS Latency 3, or 133 MHz at CAS Latency 2. These speed grades are guaranteed under 3.0–3.6 V supply and 0°C to +70°C ambient conditions. The device must be initialized with appropriate mode register settings before achieving rated frequency, and timing parameters such as tRCD (≥20 ns) and tRP (≥20 ns) must be strictly observed in the controller design. W9825G2JB-6 does not support overclocking beyond these specifications.

Does W9825G2JB-6 support auto-precharge functionality?

Yes, W9825G2JB-6 supports auto-precharge: when A10 is driven high during a Read or Write command, the SDRAM automatically initiates precharge of the accessed bank after burst completion. For reads, precharge begins before burst end based on CAS latency; for writes, it starts two clocks after final data input (tWR delay). This feature eliminates the need for explicit precharge commands in many use cases and is fully documented in the functional description section of the W9825G2JB-6 datasheet.

What package type is used for W9825G2JB-6?

W9825G2JB-6 is packaged in a RoHS-compliant TFBGA-54 (8 mm × 8 mm, 0.8 mm ball pitch) with lead-free terminations. The ball map includes dedicated VDDQ/VSSQ pins for I/O power separation, and mechanical drawings confirm body dimensions of 7.8 mm × 7.8 mm ±0.1 mm. This package is optimized for high-density routing and thermal dissipation in compact embedded modules where TSOP alternatives would increase board area.

How many refresh cycles does W9825G2JB-6 require per 64 ms?

W9825G2JB-6 requires exactly 8,192 refresh cycles every 64 ms to maintain data integrity, as specified in its electrical characteristics table. Each refresh cycle targets one row across all four banks, and the controller must distribute these cycles evenly - or issue eight consecutive CBR (CAS-before-RAS) refresh commands prior to entering self-refresh mode. Failure to meet this requirement results in gradual data retention loss, independent of temperature or voltage within rated operating conditions.

Can W9825G2JB-6 operate in self-refresh mode with CKE held low?

Yes, W9825G2JB-6 enters self-refresh mode when CS, RAS, CAS, and CKE are all held low with WE high on a CLK rising edge. In this state, the internal oscillator sustains refresh without external clocks, consuming only 2 mA typical current. The device remains in self-refresh until CKE is returned high, after which tXSR (≥200 ns) must elapse before issuing any new command. W9825G2JB-6 supports both standard and low-power self-refresh variants, with timing verified across its full temperature range.