Winbond Electronics Corporation W9825G2JB-6 TR

Overview

W9825G2JB-6 TR from Winbond is a 4M × 4 banks × 16-bit synchronous DRAM (SDRAM) operating at 166 MHz with CAS latency 3, supporting burst lengths of 1–8 and LVTTL interface. It delivers up to 166 million words per second bandwidth and features auto-precharge, self-refresh, and power-down modes for embedded main memory in industrial control systems.

For engineers reviewing the W9825G2JB-6 TR datasheet, W9825G2JB-6 TR pinout, W9825G2JB-6 TR application, or W9825G2JB-6 TR equivalent, key selection criteria include its TFBGA-54 (8×8 mm) package, 3.3V ±0.3V supply, 8K refresh cycles/64 ms timing, and compatibility with standard SDRAM controllers requiring CL3 @ 166 MHz operation.

Technical Context

This SDRAM implements four independent memory banks with interleaved access capability to hide precharge latency, enabling continuous data streaming across pages. Its programmable mode register configures burst type (sequential/interleaved), length (1–8), and CAS latency (2 or 3), while bank-select pins BS0/BS1 determine active bank targeting during row/column operations.

Command decoding is fully synchronous to CLK's rising edge, with CKE gating clock enable for power-down and self-refresh entry/exit. DQ masking via LDQM/UDQM provides byte-level write control, and A10-sampled auto-precharge enables deterministic bank closure after read/write bursts without external timing management.

Key Specifications

Pinout & Package

W9825G2JB-6 TR uses a TFBGA-54 package (8 mm × 8 mm, 0.8 mm pitch) with lead-free RoHS-compliant construction. Ball layout follows JEDEC MO-245 standard with dedicated VDDQ/VSSQ planes for I/O noise isolation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SDRAM applications.

Compared with IS42S16400F-6BLI and MT48LC4M16A2P-6A:J, W9825G2JB-6 TR offers automotive-grade screening (-40°C to +85°C) and optimized tDAL (data-in-to-active) for rapid reactivation after auto-precharge-critical in interrupt-driven real-time systems.

Availability

W9825G2JB-6 TR is available at Aetrix Electronics and suitable for industrial HMI panels, automotive infotainment gateways, and network edge routers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W9825G2JB-6 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory and microcontrollers, with over 30 years of DRAM design heritage and AEC-Q100 qualified product lines.

W9825G2JB-6 TR belongs to Winbond's automotive-grade SDRAM family engineered for mission-critical embedded systems demanding reliability under thermal stress, EMI exposure, and voltage transients.

FAQ

What is the operating temperature range supported by W9825G2JB-6 TR?

W9825G2JB-6 TR supports an industrial temperature range of -40°C to +85°C, verified per its -6I speed grade specification. This makes it suitable for deployment in automotive cabins, factory automation equipment, and outdoor networking hardware where ambient conditions exceed commercial-grade limits. The device undergoes extended burn-in and parametric testing across this full range to ensure timing compliance and data retention stability.

Does W9825G2JB-6 TR require external refresh circuitry?

No, W9825G2JB-6 TR does not require external refresh circuitry because it implements an internal refresh counter that executes 8,192 refresh cycles every 64 ms. When configured in self-refresh mode (via CKE low and /CS+/RAS+/CAS high), the SDRAM autonomously manages all refresh timing without host intervention-ideal for low-power suspend states in battery-backed systems.

Can W9825G2JB-6 TR operate at 133 MHz with CAS latency 2?

Yes, W9825G2JB-6 TR supports 133 MHz operation with CAS latency 2 as specified in its -6 speed grade definition. This dual-speed capability allows system designers to trade bandwidth for reduced timing margin risk in thermally constrained or voltage-tolerant environments. The mode register must be programmed accordingly during initialization to select CL2 timing parameters.

How is bank selection implemented on W9825G2JB-6 TR?

Bank selection on W9825G2JB-6 TR is performed using two dedicated input pins: BS0 and BS1. These signals are sampled during the rising edge of CLK along with /RAS to determine which of the four internal banks receives the subsequent ACTIVATE, READ, or WRITE command. Valid combinations are BS1:BS0 = 00 (Bank 0), 01 (Bank 1), 10 (Bank 2), and 11 (Bank 3), enabling true interleaved access across memory banks.

What is the purpose of separate VDDQ and VSSQ pins on W9825G2JB-6 TR?

The separate VDDQ and VSSQ pins on W9825G2JB-6 TR isolate the I/O buffer power domain from the core logic supply (VDD/VSS), reducing crosstalk-induced jitter on DQ signals during high-speed transitions. This separation improves setup/hold timing margins for read data capture and write data validity windows-especially critical at 166 MHz operation where noise coupling could otherwise cause bit errors or command misreads.