Winbond Electronics Corporation W9825G2JB-75

Overview

W9825G2JB-75 from Winbond is a 4M × 4 banks × 16-bit synchronous DRAM (SDRAM) operating at 133 MHz with CAS Latency 3, 3.3V supply, and TFBGA-54 (8×8 mm²) package. It delivers up to 133 million words/second bandwidth and supports burst lengths of 1, 2, 4, 8, or full page for high-throughput memory buffering in embedded controllers and industrial display systems.

For engineers reviewing the W9825G2JB-75 datasheet, W9825G2JB-75 pinout, W9825G2JB-75 application, or W9825G2JB-75 equivalent, key selection criteria include its -75 speed grade (133MHz/CL3), automotive-grade thermal range (0°C to 70°C), LVTTL interface compatibility, self-refresh capability (2 mA max), and bank-interleaved access architecture for latency hiding in real-time data pipelines.

Technical Context

This SDRAM implements a fully synchronous, clocked command interface with programmable Mode Register controlling burst type (sequential/interleave), burst length, and CAS latency. Its four independent banks enable interleaved activation to mask row precharge delays (tRP = 20 ns min), while auto-precharge (A10-high) and burst-stop commands provide precise timing control over read/write sequences.

Internal architecture includes separate VDDQ/VSSQ I/O power domains for noise immunity, dual DQM masking (LDQM/UDQM) for byte-level write control, and CKE-gated power-down and self-refresh modes. All operations are edge-triggered on CLK rising edge, with command decoding dependent on CS, RAS, CAS, and WE states per JEDEC-standard SDRAM protocol.

Key Specifications

Pinout & Package

W9825G2JB-75 uses a 54-ball thin fine-pitch ball grid array (TFBGA) package measuring 8 mm × 8 mm with 0.8 mm ball pitch. The package employs lead-free, RoHS-compliant materials and separates core logic (VDD/VSS) from I/O circuitry (VDDQ/VSSQ) to minimize switching noise coupling.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SDRAM applications.

Compared with W9825G2JB-75, IS42S16400J-7BLI offers identical performance but demands layout changes, while MT48LC16M16A2P-75:C preserves timing behavior in a larger TSOP package - both serve as functional alternatives when footprint or supply chain constraints arise.

Availability

W9825G2JB-75 is available at Aetrix Electronics and suitable for industrial HMI display controllers, automotive instrument clusters, and network edge router buffers requiring stable component supply across extended production lifecycles.

Supply support for W9825G2JB-75 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory and flash storage solutions for industrial, automotive, and computing markets.

The W9825GxJB series targets cost-sensitive, high-reliability embedded systems requiring JEDEC-compliant SDRAM with extended temperature validation and RoHS packaging.

FAQ

What is the maximum data rate supported by W9825G2JB-75?

W9825G2JB-75 supports a maximum clock frequency of 133 MHz with CAS Latency 3, delivering up to 133 million 16-bit words per second (266 MB/s peak). This rate assumes ideal burst-length-8 transfers and zero wait states; actual sustained bandwidth depends on command overhead, bank conflicts, and refresh scheduling. The W9825G2JB-75 datasheet specifies tAC ≤ 5.5 ns and tRC = 60 ns as critical timing limits governing achievable throughput.

Does W9825G2JB-75 support auto-precharge, and how is it enabled?

Yes, W9825G2JB-75 supports auto-precharge for both read and write operations. It is enabled by driving A10 high during the READ or WRITE command cycle. When active, the device automatically initiates precharge after a latency determined by CAS Latency - for example, with CL3, precharge begins three clocks before burst completion. This eliminates explicit PRECHARGE commands in sequential access patterns. The W9825G2JB-75 requires tDAL = tWR + tRP ≥ 55 ns between data-in and next bank activate.

What is the purpose of separate VDDQ and VSSQ pins on W9825G2JB-75?

Separate VDDQ and VSSQ pins on W9825G2JB-75 isolate the I/O buffer power domain from the core logic supply (VDD/VSS). This reduces crosstalk and ground bounce during high-speed DQ transitions, improving signal integrity and timing margin - especially critical for reliable operation at 133 MHz. The W9825G2JB-75 datasheet specifies that VDDQ must be within ±0.3 V of VDD and share the same nominal 3.3 V level, with dedicated decoupling recommended near the TFBGA corners.

Can W9825G2JB-75 operate in self-refresh mode during system suspend?

Yes, W9825G2JB-75 supports self-refresh mode, entered via the SELF REFRESH command (CS, RAS, CAS, WE low; CKE low on CLK rise). In this mode, the internal refresh counter maintains data integrity with only 2 mA typical current draw, enabling long-term retention during system suspend. Exit occurs when CKE returns high, followed by tXSR (120 ns min) before issuing new commands. The W9825G2JB-75 retains all bank states and mode register settings across self-refresh entry/exit.

How does burst addressing work in sequential versus interleave mode for W9825G2JB-75?

W9825G2JB-75 supports both sequential and interleave burst addressing, selected via the Mode Register. In sequential mode, column addresses increment linearly (e.g., n, n+1, n+2…); in interleave mode, lower address bits toggle in Gray-code-like fashion (e.g., A0 flips each cycle for BL=2). The W9825G2JB-75 datasheet confirms interleave mode improves cache-line alignment for certain processors, while sequential mode simplifies address generation in microcontroller-based systems. Both modes are fully supported at all burst lengths.