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Winbond Electronics Corporation W9825G2JB75I
- Part No.:
- W9825G2JB75I
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 90-TFBGA
- Datasheet:
-
W9825G2JB75I.pdf
- Description:
- IC DRAM 256MBIT LVTTL 90TFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,205
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Product details
Overview
W9825G2JB75I from Winbond is a 128M-bit (2,097,152 words × 4 banks × 32 bits) synchronous DRAM IC designed for high-bandwidth main memory in embedded and industrial systems. It operates at 133 MHz with CAS Latency 3, supports burst lengths of 1/2/4/8/full-page, and features dual-die-package (DDP) architecture delivering 1.06 GB/s peak bandwidth. It is rated for -40°C to +85°C operation with 4 mA max self-refresh current.
For engineers reviewing the W9825G2JB75I datasheet, W9825G2JB75I pinout, W9825G2JB75I application, or W9825G2JB75I equivalent, key selection criteria include PC133 timing compliance, TFBGA-90 ball layout, DDP-based density scaling, LVTTL interface compatibility, and industrial temperature support - all critical for legacy SDRAM-based controllers in networking, HMI, and industrial PLC designs.
Technical Context
This SDRAM implements a fully synchronous, clocked interface with programmable mode register control over burst length (1–8, full page), burst type (sequential or interleave), and CAS latency (2 or 3). Its dual-die-package (DDP) integrates two independent 128M-bit (x16) SDRAM dies sharing command/address/control lines but with separate DQ groups (DQ0–15 and DQ16–31), enabling 32-bit data width without external multiplexing.
Functional operation relies on bank activation (RAS#), column access (CAS#), and write enable (WE#) synchronized to CLK rising edges. Key timing constraints include tRCD ≥ 20 ns, tRP ≥ 20 ns, tRC ≥ 60 ns, and tDAL = tWR + tRP for auto-precharge writes. Self-refresh mode maintains data integrity with CKE held low, requiring no external refresh controller.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 2,097,152 words × 4 banks × 32 bits = 128 Mbit total capacity, mapped as two parallel 64M×32 banks per die in DDP configuration |
| Max Clock Frequency | 133 MHz (PC133 compliant), enabling 1.06 GB/s peak transfer rate with 8-word burst and CL3 |
| CAS Latency | Programmable CL2 or CL3; CL3 requires tAC ≤ 3.0 ns, defining minimum read-to-data-valid delay for timing-critical controllers |
| Burst Length | Configurable 1, 2, 4, 8, or full-page; determines consecutive column accesses per ACTIVATE, reducing address overhead in streaming applications |
| Refresh Requirement | 4,096 cycles / 64 ms (64 µs interval), enforced via auto-refresh or self-refresh commands to retain data without host intervention |
| Supply Voltage | 2.7 V to 3.6 V; supports wide-input LVTTL I/O with separate VDDQ/VSSQ rails for improved DQ noise immunity |
| Operating Temperature | -40°C to +85°C (industrial grade), validated for extended thermal cycling in sealed enclosures and unventilated industrial environments |
Pinout & Package
W9825G2JB75I uses a lead-free, RoHS-compliant TFBGA-90 package (8 mm × 13 mm, 0.8 mm pitch) with dual-die internal construction. Ball assignment follows JEDEC-standard SDRAM pinout with dedicated DQM0–DQM3 for byte masking and separated VDDQ/VSSQ for I/O power integrity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A11 | Address Input | Multiplexed row/column address lines; A10 controls all-bank precharge when high during command decode |
| BS0, BS1 | Bank Select | Selects one of four internal banks during ACTIVATE or READ/WRITE; enables interleaved bank access to hide precharge latency |
| DQ0–DQ31 | Data I/O | 32-bit bidirectional data bus split across two 16-bit DDP dies; DQM0–DQM3 mask individual bytes during read/write |
| CLK, CKE | Timing Control | CLK synchronizes all command latching; CKE gates internal clock - low enables Power Down, Self Refresh, or Clock Suspend modes |
| CS#, RAS#, CAS#, WE# | Command Decode | Active-low control signals decoded on CLK rising edge; define all operations including ACTIVATE, READ, WRITE, PRECHARGE, and MODE REGISTER SET |
| VDD, VSS, VDDQ, VSSQ | Power Distribution | VDD/VSS supply core logic; VDDQ/VSSQ isolate I/O drivers to minimize switching noise coupling into sensitive analog circuitry |
Key Features
| Feature | Design Value |
|---|---|
| Dual-Die-Package (DDP) | Integrates two 128M-bit x16 SDRAM dies in single TFBGA-90 package, delivering 32-bit width without external data multiplexing or PCB layer count increase |
| Programmable Burst Mode | Supports both sequential and interleave addressing - interleave mode enables efficient multi-bank pipelining for sustained bandwidth in video frame buffers |
| Auto-Precharge Capability | Embedded precharge triggered by A10 high during READ/WRITE; eliminates explicit PRECHARGE command overhead and reduces command bus contention |
| Industrial Temperature Range | Guaranteed operation from -40°C to +85°C with 4 mA max self-refresh current, enabling deployment in fanless industrial PCs and outdoor telecom equipment |
| LVTTL-Compatible Interface | 3.3V ±0.3V signaling with 2.7–3.6V tolerance; compatible with legacy FPGA and ASIC memory controllers lacking SSTL-2 or HSTL support |
Applications
| Industrial HMI Display Buffer | Legacy Network Router Packet Buffer |
|---|---|
Use Scenario: High-resolution TFT LCD panel driving in factory-floor HMIs with real-time status overlays and touch response. IC Role / Device Role / Timing Role: Main frame buffer memory interfaced to ARM9 or MIPS-based display controller, operating in interleaved-bank burst mode for continuous pixel streaming. Use Value: 133 MHz clock + CL3 timing ensures sub-100 ns read latency for overlay updates; DDP architecture provides full 32-bit width without external glue logic, simplifying BOM and layout. |
Use Scenario: Packet buffering in Layer 2 Ethernet switches using aging ASICs with native SDR SDRAM interfaces. IC Role / Device Role / Timing Role: Shared packet memory for ingress/egress queues, accessed via burst reads/writes under strict tRCD/tRP timing constraints. Use Value: Auto-precharge and programmable burst length reduce command overhead per packet, increasing effective throughput; industrial temp rating ensures reliability in uncooled rack environments. |
| Medical Diagnostic Imaging Controller | Automated Test Equipment (ATE) Pattern Memory |
Use Scenario: Real-time acquisition buffer for ultrasound beamforming processors requiring deterministic memory access. IC Role / Device Role / Timing Role: Low-latency, high-bandwidth memory for time-critical DMA transfers between ADCs and DSP cores, configured with CL2 for minimal tAC. Use Value: Dual-die structure allows independent bank activation across dies, enabling concurrent acquisition and processing without bus contention; self-refresh preserves image data during idle periods. |
Use Scenario: Storage of digital test vectors in boundary-scan and functional test systems with fixed-pattern stimulus requirements. IC Role / Device Role / Timing Role: Static pattern memory accessed sequentially via burst reads, leveraging full-page burst mode to minimize address setup overhead. Use Value: 4K refresh/64ms requirement aligns with ATE system-level refresh scheduling; TFBGA-90 footprint supports high-density board layouts with minimal trace length mismatch. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS42S32800J-7BLI | Same 128M×32 organization, 143 MHz max, CL3, TFBGA-90, but single-die construction and higher IDD (5 mA vs 4 mA) | Higher speed margin supports overclocked legacy controllers; lacks DDP density scalability for future upgrades | Choose IS42S32800J-7BLI only if >133 MHz headroom is required and DDP-specific layout advantages are not needed. |
| MT48LC32M32B2P-75:G | 128M×32, PC133/CL3, TSOP-86 package (not TFBGA), 5 mA self-refresh, -40°C to +85°C | TSOP footprint increases PCB area and limits routing density; incompatible with space-constrained modules requiring BGA | Use MT48LC32M32B2P-75:G only when board redesign for TFBGA is impractical and thermal/mechanical constraints permit TSOP mounting. |
Compared with IS42S32800J-7BLI and MT48LC32M32B2P-75:G, W9825G2JB75I uniquely combines DDP-based 32-bit width in TFBGA-90 with industrial temp rating and lowest self-refresh current - making it optimal for space- and power-constrained embedded systems where pinout compatibility and long-term supply continuity are prioritized over marginal speed gains.
Availability
W9825G2JB75I is available at Aetrix Electronics and suitable for industrial HMI, legacy network infrastructure, and medical imaging equipment requiring stable component supply, long-lifecycle assurance, and RoHS-compliant packaging.
Supply support for W9825G2JB75I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory, flash, and logic ICs, with over 30 years of DRAM design heritage and ISO 9001/14001 certified manufacturing.
The W9825G2JB series targets cost-sensitive, long-lifecycle embedded applications requiring PC133-compatible SDRAM in compact packages - emphasizing industrial reliability, dual-die density efficiency, and backward compatibility with legacy SDR memory controllers.
FAQ
What is the maximum supported clock frequency for W9825G2JB75I?
W9825G2JB75I is rated for 133 MHz operation (PC133 specification) with CAS Latency 3. This is confirmed in the Order Information table and Electrical Characteristics section of the datasheet. The -75I speed grade guarantees timing compliance across the full -40°C to +85°C range, and exceeding 133 MHz may violate tAC, tRCD, or tRP specifications. W9825G2JB75I must be operated within this limit for guaranteed functionality.
Does W9825G2JB75I support both sequential and interleave burst modes?
Yes, W9825G2JB75I supports both sequential and interleave burst addressing modes, as defined in the Mode Register Set command. The burst type is programmable via bit M3 in the mode register. Interleave mode enables efficient multi-bank pipelining for sustained bandwidth, while sequential mode suits linear buffer access. Both are validated in the Addressing Sequence sections (7.12 and 7.13) of the datasheet for W9825G2JB75I.
How does the Dual-Die-Package (DDP) architecture affect W9825G2JB75I's pinout and signal routing?
W9825G2JB75I's DDP integrates two 128M-bit x16 dies sharing all command, address, and control signals (CLK, CKE, CS#, RAS#, CAS#, WE#, A0–A11, BS0/BS1), while splitting the 32-bit data bus into DQ0–DQ15 (Die 1) and DQ16–DQ31 (Die 2). This preserves standard SDRAM pinout compatibility but requires matched trace lengths within each DQ group. DQM0–DQM3 provide per-byte masking across both dies, as documented in the Ball Description section for W9825G2JB75I.
What is the self-refresh current specification for W9825G2JB75I?
W9825G2JB75I has a maximum self-refresh current (IDD6) of 4 mA, specified in the Order Information table and Electrical Characteristics section. This value applies across the full -40°C to +85°C operating range and reflects worst-case current draw during self-refresh mode with CKE held low. It is lower than many competing 128M×32 SDRAMs, supporting thermally constrained industrial designs where passive cooling is used.
Can W9825G2JB75I operate with a 2.5V supply voltage?
No, W9825G2JB75I requires a minimum supply voltage of 2.7 V per the Recommended DC Operating Conditions table. Operation below 2.7 V violates the absolute minimum VDD specification and risks incorrect command decoding, data corruption, or failure to enter self-refresh mode. The device is designed for 3.3V ±0.3V nominal operation, with tolerance down to 2.7 V and up to 3.6 V - 2.5 V falls outside this validated range for W9825G2JB75I.
W9825G2JB75I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 90-TFBGA
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM
- Memory Size:
- 256Mbit
- Memory Organization:
- 8M x 32
- Memory Interface:
- LVTTL
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 5.4 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 90-TFBGA (8x13)
W9825G2JB75I FAQ
1.How can I place an order for W9825G2JB75I through Aetrix?
Please submit a Request for Quotation (RFQ) for W9825G2JB75I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W9825G2JB75I reliable?
The price and inventory of W9825G2JB75I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W9825G2JB75I is usually 5 days.
3.What payment methods are accepted for W9825G2JB75I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W9825G2JB75I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W9825G2JB75I?
W9825G2JB75I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W9825G2JB75I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W9825G2JB75I?
For technical support, including W9825G2JB75I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W9825G2JB75I requirements.
6.How does Aetrix verify that W9825G2JB75I is sourced from the original manufacturer or authorized distributors?
All W9825G2JB75I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W9825G2JB75I meets industry standards.
7.What is the process for return or replacement of W9825G2JB75I?
All W9825G2JB75I units undergo pre-shipment inspection (PSI). If there is an issue with W9825G2JB75I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W9825G2JB75I part is unused and in its original packaging.
Return procedure for W9825G2JB75I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W9825G2JB75I Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
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Microchip Technology
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