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Winbond Electronics Corporation W9825G2JB-75 TR

Part No.:
W9825G2JB-75 TR
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
90-TFBGA
Datasheet:
AetrixW9825G2JB-75 TR.pdf
Description:
IC DRAM 256MBIT PAR 90TFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,220

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Product details

Overview

W9825G2JB-75 TR from Winbond is a 4M × 4 banks × 16-bit synchronous DRAM (SDRAM) operating at 133 MHz with CAS Latency 3, 3.3V ±0.3V supply, and TFBGA-54 (8×8 mm²) packaging. It delivers 133M words/s bandwidth and supports burst lengths of 1, 2, 4, 8, or full page for high-throughput memory buffering in embedded controllers and industrial HMIs.

For engineers reviewing the W9825G2JB-75 TR datasheet, W9825G2JB-75 TR pinout, W9825G2JB-75 TR application, or W9825G2JB-75 TR equivalent, key selection criteria include its -75 speed grade (133MHz/CL3), automotive-grade thermal range (0°C to 70°C), LVTTL interface compatibility, self-refresh capability (2 mA max), and TFBGA-54 ball mapping with separated VDDQ/VSSQ for I/O noise immunity.

Technical Context

This SDRAM implements a four-bank architecture with programmable mode register control for burst length, CAS latency, and sequential/interleaved addressing. Its internal refresh counter executes 8K cycles per 64 ms, and it supports auto-precharge, power-down, and self-refresh modes to manage dynamic power states in resource-constrained systems.

Command decoding is fully synchronous to CLK's rising edge, with CKE-gated clock enable controlling entry/exit from low-power modes. Bank activation requires tRCD ≥ 20 ns, and interleaved bank access hides precharge latency via tRRD = 15 ns, enabling continuous data streaming across active banks without pipeline stalls.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 4,194,304 words × 4 banks × 16 bits - provides 128 Mbit total capacity with bank-level parallelism for concurrent page access.
Clock Frequency 133 MHz - defines maximum sustained data transfer rate of 133M words/s under CL3 timing.
CAS Latency 3 clock cycles - determines minimum read-to-data-valid delay; fixed for -75 grade, no CL2 support.
Burst Length 1, 2, 4, 8, or full page - configurable via mode register to match controller burst requirements and optimize bus utilization.
Supply Voltage 3.3V ±0.3V - requires single-rail LVTTL-compatible power delivery; VDDQ separated from VDD for improved DQ signal integrity.
Refresh Rate 8,192 cycles / 64 ms - mandates one refresh command every 7.8 µs on average; supported by internal counter during self-refresh.
Operating Temperature 0°C to 70°C - commercial-grade thermal specification; not rated for extended industrial (-40°C to 85°C) operation.
Package TFBGA-54 (8×8 mm², 0.8 mm pitch) - surface-mount package with 54 solder balls, RoHS-compliant and lead-free.

Pinout & Package

W9825G2JB-75 TR uses a 54-ball TFBGA package with 0.8 mm pitch and 8×8 mm² footprint. Ball assignment follows JEDEC-standard SDRAM layout with dedicated address, control, data, power, and ground terminals. VDDQ/VSSQ are isolated for I/O noise suppression; NC ball at E2 is unconnected.

Pin/Terminal Circuit Role Design Meaning
A0–A12 Address Input Multiplexed row/column address lines; A10 controls all-bank vs. bank-select precharge when sampled during command.
BS0, BS1 Bank Select Two-bit encoding selects one of four internal banks during ACTIVATE or READ/WRITE commands.
DQ0–DQ15 Data I/O 16-bit bidirectional data bus; LDQM/UDQM mask lower/upper byte independently during reads/writes.
/CS, /RAS, /CAS, /WE Command Control Active-low command strobes decoded synchronously on CLK rising edge to initiate all operations.
CLK, CKE Clock Interface CLK drives all synchronous operations; CKE enables/disables internal clock domain to enter power-down or self-refresh.
VDD, VDDQ, VSS, VSSQ Power/Ground VDD powers core logic; VDDQ powers I/O buffers; VSSQ isolation reduces switching noise coupling into data signals.

Key Features

Feature Design Value
Programmable Mode Register Configures burst length, CAS latency, and sequential/interleaved addressing mode - enables optimization for specific controller timing profiles.
Auto-precharge Support Enables automatic bank precharge after read/write completion when A10 is asserted - eliminates explicit PRECHARGE command overhead in burst-heavy workloads.
Self-refresh Mode Internal refresh counter maintains data retention with only CKE held low - reduces system-level refresh management burden during suspend states.
Byte-Level Write Masking LDQM/UDQM pins disable lower/upper 8-bit lanes independently during writes - allows precise partial-word updates without read-modify-write cycles.
Power-down Mode CKE-driven entry/exit reduces active current while preserving state - supports rapid wake-up (<100 ns tCKS + tCK) for low-latency resume.

Applications

Industrial HMI Memory Buffer Embedded Controller Main Memory

Use Scenario: Touchscreen-based human-machine interface in factory automation panels requiring local frame buffer storage and real-time GUI rendering.

IC Role / Device Role / Timing Role: Primary SDRAM providing 16-bit wide, burst-accessible memory space for display controller pixel data and application code execution.

Use Value: 133 MHz clock and CL3 latency ensure sub-30 ns read access to support 60 Hz UI refresh with minimal CPU wait states.

Use Scenario: Real-time motion control system using ARM Cortex-M7 MCU with external memory interface for firmware overlay and sensor history logging.

IC Role / Device Role / Timing Role: Off-chip main memory extending MCU SRAM capacity for deterministic interrupt response and multi-threaded task stacks.

Use Value: Four-bank interleaving and auto-precharge reduce effective memory latency during concurrent servo loop and communication tasks.

Network Edge Router Packet Buffer Medical Diagnostic Imaging Cache

Use Scenario: Low-cost Ethernet switch ASIC requiring temporary packet storage before forwarding or classification.

IC Role / Device Role / Timing Role: Shared packet buffer supporting simultaneous ingress/egress DMA channels with burst-length-8 transfers.

Use Value: Full-page burst capability and 16-bit bus width maximize throughput for 1500-byte Ethernet frames with minimal bus arbitration overhead.

Use Scenario: Portable ultrasound device storing real-time B-mode scan line data prior to DSP processing and display.

IC Role / Device Role / Timing Role: High-reliability frame cache interfacing directly to ADC/DAC subsystems with strict timing margins.

Use Value: Self-refresh mode maintains image data integrity during battery-saver sleep intervals without host intervention.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SDRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IS42S16400J-7BLI Same 4M×4×16 organization, 133 MHz/CL3, but -40°C to 85°C industrial temp range and TSOP-54 package. Preferred where extended temperature operation or through-hole rework compatibility is required. Select IS42S16400J-7BLI if board-level thermal environment exceeds 70°C or TSOP-54 mechanical fit is mandated.
MT48LC4M16A2P-75:C Identical speed grade (133 MHz/CL3), same TFBGA-54 package, but Micron-manufactured with different AC timing parameters (e.g., tRCD = 22 ns vs. Winbond's 20 ns). Suitable for drop-in replacement where PCB layout matches and system timing margin accommodates longer tRCD. Choose MT48LC4M16A2P-75:C only after validating tRCD and tRP compliance in target clock tree setup.

Compared with IS42S16400J-7BLI, W9825G2JB-75 TR offers tighter tRCD (20 ns) and commercial-temperature cost optimization; versus MT48LC4M16A2P-75:C, it provides identical package and speed but distinct timing margins requiring design-specific validation.

Availability

W9825G2JB-75 TR is available at Aetrix Electronics and suitable for industrial HMI, embedded controller memory expansion, and network packet buffering requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for W9825G2JB-75 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR Flash, DDR SDRAM, and mobile RAM products.

The W9825GxJB series targets cost-sensitive, high-reliability embedded systems requiring standard-compliant SDRAM with automotive-grade screening and industrial-grade robustness in compact packages.

FAQ

What is the maximum operating frequency of the W9825G2JB-75 TR?

The W9825G2JB-75 TR is rated for 133 MHz operation with CAS Latency 3. This speed grade is fixed per the -75 suffix and does not support 166 MHz operation like the -6 variant. The device meets all AC timing specifications at this frequency under 0°C to 70°C ambient conditions and 3.3V ±0.3V supply.

Does the W9825G2JB-75 TR support CAS Latency 2?

No, the W9825G2JB-75 TR only supports CAS Latency 3. The -75 speed grade is specifically characterized and guaranteed for 133 MHz/CL3 operation; CL2 is exclusive to the -6 grade per Winbond's ordering matrix and electrical specifications table.

What package type and ball count does the W9825G2JB-75 TR use?

The W9825G2JB-75 TR uses a 54-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package measuring 8 mm × 8 mm with 0.8 mm ball pitch. It is lead-free and RoHS compliant, with ball assignments matching JEDEC-standard SDRAM layouts including dedicated VDDQ/VSSQ planes.

Can the W9825G2JB-75 TR operate in self-refresh mode, and what is the typical current draw?

Yes, the W9825G2JB-75 TR supports self-refresh mode with a maximum current draw of 2 mA as specified in the ordering information table. In this mode, the internal refresh counter maintains data retention while the host suspends all commands except CKE control, making it ideal for low-power standby states.

Is the W9825G2JB-75 TR pin-compatible with other Winbond SDRAMs such as the W9825G6JB series?

Yes, the W9825G2JB-75 TR shares identical TFBGA-54 pinout, ball function mapping, and electrical interface with the W9825G6JB family, including /CS, /RAS, /CAS, /WE, CLK, CKE, DQ0–DQ15, and address/control ball locations. This enables direct substitution within the same speed grade and temperature range.

W9825G2JB-75 TR Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
90-TFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM
Memory Size:
256Mbit
Memory Organization:
16M x 16
Memory Interface:
Parallel
Clock Frequency:
133 MHz
Write Cycle Time - Word, Page:
-
Access Time:
5.4 ns
Voltage - Supply:
3V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
90-TFBGA (8x13)

W9825G2JB-75 TR FAQ

1.How can I place an order for W9825G2JB-75 TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W9825G2JB-75 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W9825G2JB-75 TR reliable?

The price and inventory of W9825G2JB-75 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W9825G2JB-75 TR is usually 5 days.

3.What payment methods are accepted for W9825G2JB-75 TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W9825G2JB-75 TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W9825G2JB-75 TR?

W9825G2JB-75 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W9825G2JB-75 TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W9825G2JB-75 TR?

For technical support, including W9825G2JB-75 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W9825G2JB-75 TR requirements.

6.How does Aetrix verify that W9825G2JB-75 TR is sourced from the original manufacturer or authorized distributors?

All W9825G2JB-75 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W9825G2JB-75 TR meets industry standards.

7.What is the process for return or replacement of W9825G2JB-75 TR?

All W9825G2JB-75 TR units undergo pre-shipment inspection (PSI). If there is an issue with W9825G2JB-75 TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W9825G2JB-75 TR part is unused and in its original packaging.

Return procedure for W9825G2JB-75 TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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