Winbond Electronics Corporation W9825G6JB-6 TR

Overview

W9825G6JB-6 TR from Winbond is a 4M × 4 banks × 16-bit synchronous DRAM (SDRAM) operating at 166 MHz with CAS Latency 3 or 133 MHz with CAS Latency 2, supporting LVTTL interface, burst lengths of 1/2/4/8/full-page, and auto-precharge functionality. It serves as main memory in embedded controllers and industrial human-machine interfaces requiring deterministic timing and multi-bank interleaving.

For engineers reviewing the W9825G6JB-6 TR datasheet, W9825G6JB-6 TR pinout, W9825G6JB-6 TR application, or W9825G6JB-6 TR equivalent, key selection criteria include its TFBGA-54 (8×8 mm²) package, 3.3V ±0.3V supply, self-refresh capability, and compatibility with standard SDRAM controllers in automotive-grade temperature range (0°C to 70°C).

Technical Context

This SDRAM implements four independent memory banks with row/column address multiplexing via A0–A12 pins and bank selection via BS0/BS1. Its command decoder interprets RAS/CAS/WE/CS combinations on CLK rising edges to execute bank activate, read/write, precharge, auto-refresh, and self-refresh operations.

Internal timing is governed by programmable Mode Register settings for burst type (sequential/interleave), burst length, and CAS latency. The device supports seamless interleaved access across banks to hide tRCD and tRP delays, and uses separate VDDQ/VSSQ rails to isolate I/O noise from core logic.

Key Specifications

Pinout & Package

W9825G6JB-6 TR is housed in a lead-free, RoHS-compliant TFBGA-54 package (8 mm × 8 mm, 0.8 mm ball pitch) with exposed pad for thermal management. Ball assignments follow JEDEC-standard SDRAM pinout conventions.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SDRAM applications.

Compared with W9825G6JB-6 TR, IS42S16400F-6BLI offers wider temperature range but demands firmware adaptation, while MT48LC4M16A2P-6A matches pinout and speed exactly but consumes more power in low-power states and lacks automotive validation.

Availability

W9825G6JB-6 TR is available at Aetrix Electronics and suitable for industrial HMI, automotive instrument clusters, and network infrastructure equipment requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for W9825G6JB-6 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in memory ICs, flash storage, and security solutions, with over 30 years of DRAM design heritage.

The W9825G6JB series targets cost-sensitive, high-reliability embedded systems requiring automotive-grade SDRAM performance in compact TFBGA packages - optimized for controller-based memory subsystems with minimal external logic.

FAQ

What is the maximum data bandwidth achievable with W9825G6JB-6 TR?

W9825G6JB-6 TR achieves up to 166 million words per second, translating to 332 MB/s with its 16-bit bus width at 166 MHz clock frequency and CL3 timing. This bandwidth assumes continuous full-page bursts with zero wait states and optimal bank interleaving - actual throughput depends on command scheduling efficiency and refresh overhead in the host controller.

Does W9825G6JB-6 TR support both sequential and interleaved burst addressing modes?

Yes, W9825G6JB-6 TR supports both sequential and interleaved burst addressing modes, configurable via the Mode Register. Sequential mode increments column addresses linearly (e.g., n, n+1, n+2), while interleaved mode toggles specific address bits (A0–A2) to enable cache-friendly access patterns. The choice affects memory controller address generation logic and must match the configured burst length.

How does the auto-precharge function operate in W9825G6JB-6 TR during a read command?

In W9825G6JB-6 TR, auto-precharge activates when A10 is high during a read command. The SDRAM begins internal precharge before burst completion - specifically, it starts tRP cycles prior to the final data output, determined by CAS latency. This eliminates the need for a separate precharge command, reducing command overhead in streaming applications but prohibiting interruption of the burst cycle.

What is the purpose of separate VDDQ and VSSQ pins on W9825G6JB-6 TR?

W9825G6JB-6 TR uses dedicated VDDQ and VSSQ pins to isolate I/O buffer power from core logic supplies. This separation minimizes switching noise coupling from data bus activity into sensitive internal circuitry, improving signal integrity and timing margin - especially critical for reliable operation at 166 MHz with tight setup/hold windows on DQ lines.

Can W9825G6JB-6 TR be used in systems requiring extended temperature operation beyond 70°C?

No, W9825G6JB-6 TR is specified for 0°C to 70°C operation. For extended temperature support, Winbond offers the W9825G6JB-6I variant, which is fully compatible pin-for-pin and electrically identical but guaranteed to operate from -40°C to +85°C. Using W9825G6JB-6 TR outside its rated range may result in data retention failure or timing violations.