Winbond Electronics Corporation W9825G6JH-6 TR

Overview

W9825G6JH-6 TR from Winbond is a 4M × 4 banks × 16-bit synchronous DRAM (SDRAM) operating at 166 MHz with CAS Latency 3 or 133 MHz with CAS Latency 2, supporting burst lengths of 1/2/4/8/full page, LVTTL interface, and TSOP II-54 package. It serves as main memory in embedded controllers, industrial HMIs, and legacy PC-compatible systems requiring cost-effective, pin-compatible SDRAM.

For engineers reviewing the W9825G6JH-6 TR datasheet, W9825G6JH-6 TR pinout, W9825G6JH-6 TR application, or W9825G6JH-6 TR equivalent, key selection criteria include guaranteed 166 MHz/CL3 timing at 0°C–70°C, TSOP II-54 mechanical compatibility, self-refresh current ≤2 mA, and support for auto-precharge, power-down, and clock suspend modes.

Technical Context

This SDRAM implements four independent 4M-word banks with row/column address multiplexing via A0–A12, bank selection via BS0/BS1, and command decoding synchronized to CLK rising edges. It supports both sequential and interleave burst addressing modes programmed via the Mode Register.

Functional operation requires strict initialization: 200 µs power-up delay, all-bank precharge, eight auto-refresh cycles, then Mode Register Set. Command execution depends on CS/RAS/CAS/WE logic levels sampled at CLK edges, with tRCD ≥20 ns, tRP ≥20 ns, and tRC ≥60 ns for -6 speed grade.

Key Specifications

Pinout & Package

W9825G6JH-6 TR is housed in a 54-pin TSOP II (400 mil) package with 0.80 mm pitch, RoHS-compliant lead-free construction. Pin functions follow JEDEC-standard SDRAM layout with dedicated DQ0–DQ15 data lines, LDQM/UDQM byte masks, and separated VDD/VDDQ and VSS/VSSQ supplies.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SDRAM applications.

Compared with AS4C16M16SA-6TCN and MT48LC16M16A2P-6A:L, W9825G6JH-6 TR offers identical electrical and mechanical compatibility for commercial-temperature designs but lacks extended-temp certification and has looser refresh interval requirements-making it optimal for cost-sensitive, thermally stable embedded applications.

Availability

W9825G6JH-6 TR is available at Aetrix Electronics and suitable for industrial HMIs, legacy PC-compatible systems, and embedded network equipment requiring stable component supply with long-lifecycle support.

Supply support for W9825G6JH-6 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory and microcontroller solutions since 1987.

The W9825G6JH series belongs to Winbond's legacy SDRAM product line, designed specifically for cost-optimized, pin-compatible memory upgrades in industrial and embedded computing platforms.

FAQ

What is the maximum operating frequency supported by the W9825G6JH-6 TR?

The W9825G6JH-6 TR supports two speed configurations: 166 MHz with CAS Latency 3 or 133 MHz with CAS Latency 2. These are guaranteed performance grades defined in the official datasheet revision A02. The -6 suffix explicitly denotes this dual-speed capability, and operation beyond these frequencies violates the device's AC timing specifications-including tRCD ≥20 ns and tRP ≥20 ns-potentially causing read/write failures or data corruption in the W9825G6JH-6 TR.

Does the W9825G6JH-6 TR support automatic refresh, and how is it implemented?

Yes, the W9825G6JH-6 TR requires 8,192 auto-refresh cycles every 64 ms to maintain data integrity. This is implemented via externally generated AUTO REFRESH commands issued by the memory controller at regular intervals. The device does not perform autonomous refresh; instead, it relies on the system controller to assert CS/L, RAS/L, CAS/H, and WE/H at the rising edge of CLK. The W9825G6JH-6 TR internally tracks refresh addresses and increments them per cycle, ensuring all rows are refreshed within the specified window.

Can the W9825G6JH-6 TR be used in place of the W9825G6JH-5 or W9825G6JH-75?

Yes, the W9825G6JH-6 TR is pin- and functionally compatible with W9825G6JH-5 and W9825G6JH-75, sharing identical TSOP II-54 packaging, address/command interface, and register programming model. However, timing margins differ: the -5 grade supports 200 MHz/CL3, while the -75 supports only 133 MHz/CL3. Substituting W9825G6JH-6 TR into a -5-designed system may require reducing clock frequency or adjusting CL settings to meet tRCD/tRP requirements. The W9825G6JH-6 TR remains fully compatible in -75-based designs.

What is the purpose of the LDQM and UDQM pins on the W9825G6JH-6 TR?

LDQM (Lower Data Queue Mask) and UDQM (Upper Data Queue Mask) provide byte-level write masking for the 16-bit DQ0–DQ15 bus. When sampled high during a write cycle, LDQM blocks writes to DQ0–DQ7, and UDQM blocks writes to DQ8–DQ15-enabling partial-word updates without read-modify-write overhead. During reads, asserting either DQM places the corresponding 8-bit segment in high-impedance state, allowing clean bus sharing in multi-device configurations. This functionality is integral to efficient memory management in the W9825G6JH-6 TR.

How does the W9825G6JH-6 TR handle power management during idle periods?

The W9825G6JH-6 TR supports three low-power states: Power Down Mode (CKE low, disables input receivers), Clock Suspend Mode (CKE low while bank active, halts internal clock), and Self Refresh Mode (CKE low + CS/RAS/CAS low, WE high, maintains data with internal oscillator). In Self Refresh, current draw is ≤2 mA, enabling extended battery-backed operation. All modes require specific entry/exit sequences defined in the W9825G6JH-6 TR datasheet-especially tXSR delay after Self Refresh exit-to prevent command collision or data loss.