Winbond Electronics Corporation W9825G6KB-6I
- Part No.:
- W9825G6KB-6I
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 54-TFBGA
- Datasheet:
-
W9825G6KB-6I.pdf
- Description:
- IC DRAM 256MBIT LVTTL 54TFBGA
- Quantity:
- Payment:

- Shipping:

Inventory:2,985
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
W9825G6KB-6I from Winbond Electronics is a 4M × 4 banks × 16-bit synchronous DRAM (SDRAM) operating at 166 MHz with CAS latency 3, supporting LVTTL interface and auto-precharge functionality. It delivers up to 166 million words per second bandwidth and is rated for industrial temperature range (–40°C to +85°C), serving as main memory in embedded controllers and real-time data acquisition systems.
For engineers reviewing the W9825G6KB-6I datasheet, W9825G6KB-6I pinout, W9825G6KB-6I application, or W9825G6KB-6I equivalent, key selection criteria include burst length configurability (1/2/4/8/full page), dual DQM masking for byte-level write control, self-refresh capability within its specified temperature envelope, and TFBGA-54 package compatibility with high-density PCB layouts.
Technical Context
This SDRAM implements a four-bank architecture with independent row activation and interleaved bank access to hide precharge delays. Its command decoder interprets RAS/CAS/WE/CS combinations on CLK rising edges to execute bank activate, read/write, precharge, auto-precharge, self-refresh, and power-down operations.
Internal timing is governed by programmable mode register settings for burst type (sequential/interleave), burst length, and CAS latency. The device supports full-page burst reads, single-cycle write initiation, and clock-suspend mode via CKE control - all compliant with JEDEC-standard SDRAM protocols for system-level synchronization.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 4,194,304 words × 4 banks × 16 bits = 128 Mbit total capacity |
| Max Clock Frequency | 166 MHz - enables 332 MB/s peak data rate with 16-bit bus |
| CAS Latency | CL = 3 - defines 3-clock delay between column address and first valid read data |
| Burst Length | Configurable 1, 2, 4, 8, or full-page - determines consecutive column accesses per command |
| Operating Temperature | –40°C to +85°C - validated for industrial-grade reliability without derating |
| Refresh Requirement | 8K cycles / 64 ms - ensures data retention under sustained operation at max case temperature |
| Interface Standard | LVTTL - compatible with 3.3V ±0.3V logic families and standard SDRAM controllers |
Pinout & Package
Package: TFBGA-54 (8 mm × 8 mm, RoHS-compliant, lead-free).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A12 | Address Input | Multiplexed row/column address lines; A10 controls all-bank precharge when high during command |
| BS0, BS1 | Bank Select | Two-bit encoding selects one of four internal banks for activation or access |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus with separate VDDQ/VSSQ for noise isolation |
| /CS, /RAS, /CAS, /WE | Command Control | Active-low signals decoded on CLK rising edge to define operation (e.g., /RAS+/CAS = read) |
| LDQM, UDQM | Data Mask | Lower/upper byte masks enabling selective 8-bit writes without affecting adjacent bytes |
| CLK, CKE | Clock Interface | CLK synchronizes all inputs; CKE gates internal clock - low enables power-down/self-refresh |
| VDD, VDDQ, VSS, VSSQ | Power/Ground | Dual-supply design: VDD/VSS for core logic, VDDQ/VSSQ for I/O buffers to minimize switching noise |
Key Features
| Feature | Design Value |
|---|---|
| Programmable Mode Register | Enables runtime configuration of burst length, CAS latency, and burst type (sequential/interleave) to match host controller requirements |
| Auto-precharge Support | Automatically initiates bank precharge after read/write completion when A10 is asserted - eliminates explicit precharge command overhead |
| Dual DQM Masking | Independent LDQM/UDQM pins allow masking of lower or upper 8-bit data lanes during writes - critical for partial-word updates |
| Self-refresh Mode | Retains data with minimal external control while reducing power; guaranteed functional from –40°C to +85°C |
| Interleaved Bank Access | Enables continuous data streaming across banks by overlapping activate/precharge/read cycles - hides tRP and tRCD delays |
Applications
| Industrial PLC Memory | Medical Imaging Buffer |
|---|---|
Use Scenario: Real-time ladder logic execution and I/O state buffering in programmable logic controllers requiring deterministic memory access. IC Role / Device Role / Timing Role: Primary working memory interfaced directly to ARM Cortex-M7 or RISC-V MCU with SDRAM controller. Use Value: 166 MHz clock and CL3 timing enable sub-6 ns effective read latency per word, meeting hard real-time scan cycle deadlines. | Use Scenario: Frame buffering in portable ultrasound devices capturing 12-bit grayscale video at 30 fps with on-device preprocessing. IC Role / Device Role / Timing Role: High-bandwidth temporary storage for raw sensor data before compression and transmission. Use Value: 16-bit bus width and 8-word burst capability deliver 531 MB/s sustained throughput - sufficient for dual-channel 12-bit ADC streams. |
| Avionics Data Logger | Network Packet Buffer |
Use Scenario: Non-volatile flight parameter recording in UAVs where extended temperature operation and radiation tolerance are essential. IC Role / Device Role / Timing Role: Volatile buffer staging telemetry before ECC-protected flash write; operates continuously during powered flight. Use Value: Industrial temperature rating (–40°C to +85°C) and self-refresh mode ensure data integrity during thermal transients and power interruptions. | Use Scenario: Deep packet inspection engine in industrial Ethernet switches handling 1 Gbps line-rate traffic with zero packet loss. IC Role / Device Role / Timing Role: Shared memory pool for ingress/egress packet queues managed by network processor DMA engines. Use Value: Four-bank architecture enables concurrent read (from ingress queue) and write (to egress queue) without bank conflict stalls. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS42S16400J-6BLI | Same 128 Mbit organization, 166 MHz, CL3, TFBGA-54, but uses different refresh timing (4K/64 ms) and lacks full-page burst support | Suitable for legacy designs using ISSI's SDRAM controller IP; requires validation of mode register bit mapping | Select if existing layout uses ISSI footprint and controller firmware already supports its timing parameters |
| MT48LC16M16A2P-6A:G | 128 Mbit, 166 MHz, CL3, TSOP-54 - different package (TSOP vs TFBGA), higher tRC (50 ns vs 45 ns), no self-refresh above 85°C | Better suited for cost-sensitive consumer boards with through-hole or surface-mount TSOP constraints | Choose only when TFBGA-54 rework is impractical and industrial temperature margin can be relaxed |
Compared with IS42S16400J-6BLI and MT48LC16M16A2P-6A:G, the W9825G6KB-6I provides full-page burst capability and verified self-refresh operation across its full industrial temperature range - making it preferable for new designs requiring maximum flexibility and robustness in harsh environments.
Availability
W9825G6KB-6I is available at Aetrix Electronics and suitable for industrial PLC memory, medical imaging buffers, avionics data loggers, and network packet buffers requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W9825G6KB-6I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR Flash, DDR SDRAM, and mobile RAM.
The W9825G6KB series targets cost-effective, industrial-grade SDRAM applications where reliability, JEDEC compliance, and TFBGA packaging are prioritized over ultra-high-speed performance.
FAQ
What is the maximum supported clock frequency for W9825G6KB-6I?
The W9825G6KB-6I is rated for operation up to 166 MHz with CAS latency 3, as confirmed in its speed grade designation and electrical characteristics table. This frequency is guaranteed across the full industrial temperature range (–40°C to +85°C) when operated within specified VDD (3.3V ±0.3V) and timing margins. Exceeding this frequency may result in setup/hold violations or data corruption.
Does W9825G6KB-6I support self-refresh mode at 85°C case temperature?
Yes, W9825G6KB-6I supports self-refresh mode at case temperatures up to +85°C, as explicitly stated in the features section and order information table. However, self-refresh is not supported above +85°C - the datasheet notes "Not support self refresh function with TCASE > 85°C", and the -6J variant is required for operation up to +105°C.
How many banks does W9825G6KB-6I have, and how are they selected?
W9825G6KB-6I contains four internal memory banks, selected using the BS0 and BS1 pins during row activation or column access commands. These two bank-select signals encode binary values (00–11) to target BANK #0 through BANK #3, enabling interleaved access patterns that improve effective bandwidth by hiding precharge delays between banks.
What is the purpose of LDQM and UDQM pins on W9825G6KB-6I?
The LDQM (Lower Data Mask) and UDQM (Upper Data Mask) pins on W9825G6KB-6I provide independent byte-level write masking for the 16-bit DQ bus. When asserted high during a write cycle, LDQM blocks writes to DQ0–DQ7, and UDQM blocks writes to DQ8–DQ15 - allowing precise 8-bit updates without disturbing adjacent data, which is essential for mixed-width peripheral interfacing.
Is W9825G6KB-6I pin-compatible with other Winbond SDRAMs like W9812G6KH?
No, W9825G6KB-6I is not pin-compatible with W9812G6KH. While both are Winbond SDRAMs in TFBGA-54 packages, W9812G6KH is a 64 Mbit (2M × 4 banks × 8-bit) device with different address pin count (A0–A11 vs A0–A12) and distinct ball assignments - confirmed by comparing their respective ball description tables. Direct substitution would require PCB redesign.
W9825G6KB-6I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 54-TFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM
- Memory Size:
- 256Mbit
- Memory Organization:
- 16M x 16
- Memory Interface:
- LVTTL
- Clock Frequency:
- 166 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 5 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-TFBGA (8x8)
W9825G6KB-6I FAQ
1.How can I place an order for W9825G6KB-6I through Aetrix?
Please submit a Request for Quotation (RFQ) for W9825G6KB-6I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W9825G6KB-6I reliable?
The price and inventory of W9825G6KB-6I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W9825G6KB-6I is usually 5 days.
3.What payment methods are accepted for W9825G6KB-6I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W9825G6KB-6I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W9825G6KB-6I?
W9825G6KB-6I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W9825G6KB-6I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W9825G6KB-6I?
For technical support, including W9825G6KB-6I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W9825G6KB-6I requirements.
6.How does Aetrix verify that W9825G6KB-6I is sourced from the original manufacturer or authorized distributors?
All W9825G6KB-6I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W9825G6KB-6I meets industry standards.
7.What is the process for return or replacement of W9825G6KB-6I?
All W9825G6KB-6I units undergo pre-shipment inspection (PSI). If there is an issue with W9825G6KB-6I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W9825G6KB-6I part is unused and in its original packaging.
Return procedure for W9825G6KB-6I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W9825G6KB-6I Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

