Winbond Electronics Corporation W9825G6KB-6I TR

Overview

W9825G6KB-6I TR from Winbond is a 4M × 4 banks × 16-bit synchronous DRAM (SDRAM) operating at 166 MHz with CAS Latency 3, 3.3V supply, and TFBGA-54 (8×8 mm²) packaging. It delivers up to 166 million words/second bandwidth and supports auto-precharge, self-refresh, and burst lengths of 1–8 for embedded main memory in industrial controllers and communication baseband processors.

For engineers reviewing the W9825G6KB-6I TR datasheet, W9825G6KB-6I TR pinout, W9825G6KB-6I TR application, or W9825G6KB-6I TR equivalent, key selection considerations include industrial temperature support (−40°C to +85°C), LVTTL interface compatibility, 54-ball TFBGA package footprint, and CAS latency configuration flexibility via mode register.

Technical Context

This SDRAM implements four independent memory banks with interleaved access capability to hide precharge delays, enabling continuous data streaming across pages. Its command decoder interprets RAS/CAS/WE/CS combinations on CLK rising edges to execute bank activate, read/write, precharge, auto-precharge, self-refresh, and power-down operations.

The device uses multiplexed address pins A0–A12 for row/column addressing, with A10 controlling all-bank vs. bank-specific precharge and auto-precharge enablement. Mode register programming defines burst type (sequential/interleave), length (1/2/4/8), and CAS latency (2 or 3), directly determining timing behavior and throughput efficiency in burst-oriented systems.

Key Specifications

Pinout & Package

W9825G6KB-6I TR uses a 54-ball TFBGA package (8×8 mm², 0.8 mm pitch) with separate VDD/VDDQ and VSS/VSSQ supplies for logic and I/O noise isolation. Ball assignments follow standard SDRAM pinout conventions with multiplexed address, dual DQM masking, and dedicated control signals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SDRAM applications.

Compared with IS42S16400J-6BLI and MT48LC16M16A2P-6A:G, W9825G6KB-6I TR offers tighter tRCD and lower self-refresh current in the same TFBGA-54 footprint, making it optimal for thermally constrained industrial and portable embedded systems requiring long-term data retention without active refresh.

Availability

W9825G6KB-6I TR is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging subsystems, and telecom baseband processors requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W9825G6KB-6I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR Flash, PSRAM, and SDR/DDR SDRAM for embedded and industrial markets.

The W9825G6KB series targets cost-sensitive, high-reliability applications needing synchronous DRAM functionality without DDR complexity-designed specifically for MCU- and FPGA-based systems requiring predictable timing and industrial-grade thermal performance.

FAQ

What is the maximum supported clock frequency for W9825G6KB-6I TR?

W9825G6KB-6I TR is rated for a maximum clock frequency of 166 MHz under industrial temperature conditions (−40°C to +85°C). This corresponds to a data transfer rate of 166 million words per second with CAS Latency 3. The device also supports 133 MHz operation with CAS Latency 2 for lower-power or timing-margin-constrained designs. Both speed grades are validated across the full industrial temperature range specified in the datasheet.

Does W9825G6KB-6I TR support self-refresh mode at its maximum operating temperature?

Yes, W9825G6KB-6I TR supports self-refresh mode across its entire rated industrial temperature range of −40°C to +85°C, consuming a maximum of 2 mA during self-refresh. However, the datasheet explicitly states that self-refresh is not supported above +85°C case temperature-so operation at +105°C (the -6J grade limit) disables this feature. For W9825G6KB-6I TR, self-refresh remains fully functional and characterized up to +85°C.

How many memory banks does W9825G6KB-6I TR have, and why does that matter?

W9825G6KB-6I TR contains four independent memory banks. This architecture enables bank interleaving-allowing one bank to be precharged while another is active-thereby hiding tRP (precharge delay) and tRC (row cycle time) overhead. In practice, this increases effective bandwidth by up to 35% compared to single-bank SDRAM in burst-intensive applications like video buffering or packet processing.

What is the purpose of LDQM and UDQM pins on W9825G6KB-6I TR?

LDQM (Lower Data Mask) and UDQM (Upper Data Mask) on W9825G6KB-6I TR provide byte-level write masking for the 16-bit DQ bus: LDQM controls DQ0–DQ7 and UDQM controls DQ8–DQ15. When asserted high during a write cycle, they block corresponding byte lanes from being written. During reads, they place the respective outputs in high-impedance state, preventing bus contention when mixing read and write operations or implementing partial updates.

Can W9825G6KB-6I TR be used as a direct replacement for W9825G6KB-6 or W9825G6KB-6J?

W9825G6KB-6I TR shares identical electrical specifications, timing parameters, and pinout with W9825G6KB-6 and W9825G6KB-6J, differing only in temperature grading and self-refresh current. It is functionally compatible across all three speed grades. However, substitution requires verifying thermal design margins: W9825G6KB-6I TR is qualified for −40°C to +85°C, so replacing a -6J part in a +105°C environment would violate specification, while replacing a -6 part in an industrial setting adds margin without penalty.