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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Winbond Electronics Corporation W9825G6KB-6 TR

Name: W9825G6KB-6 TR
Brand: Winbond Electronics Corporation
SKU: W9825G6KB-6 TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: W9825G6KB-6 TR

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 54-TFBGA

Datasheet:: W9825G6KB-6 TR.pdf

Description:: IC DRAM 256MBIT LVTTL 54TFBGA

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Inventory:5,000

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Product details

Overview

W9825G6KB-6 TR from Winbond is a 4M × 4 banks × 16-bit synchronous DRAM (SDRAM) operating at 166 MHz with CAS latency 3, 3.3V supply, and TFBGA-54 (8×8 mm²) packaging. It delivers 166 million words/second bandwidth and supports burst lengths of 1–8 and full-page, enabling high-throughput memory buffering in embedded controllers and industrial HMIs.

For engineers reviewing the W9825G6KB-6 TR datasheet, W9825G6KB-6 TR pinout, W9825G6KB-6 TR application, or W9825G6KB-6 TR equivalent, key selection criteria include CL3 timing compliance at 166 MHz, self-refresh capability up to 85°C, LVTTL interface compatibility, and TFBGA-54 ball mapping for PCB layout verification.

Technical Context

This SDRAM implements a fully synchronous architecture with programmable mode register control over burst type (sequential/interleave), burst length (1–8/full page), and CAS latency (2 or 3). Its four internal banks support interleaved access to hide precharge delays, and it uses multiplexed address pins (A0–A12) with bank select inputs (BS0/BS1) to manage row/column addressing across banks.

Functional operation relies on command decoding via RAS/CAS/WE/CS on CLK rising edges, supporting auto-precharge (A10=high), self-refresh (CKE low + CS/RAS/CAS low), power-down (CKE low), and burst stop. Refresh is managed via 8K cycles per 64 ms at ≤85°C or per 16 ms at 85–105°C.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	4,194,304 words × 4 banks × 16 bits - provides 128 Mbit total capacity with bank-level parallelism for pipelined access.
Clock Frequency	166 MHz - enables 166 million words/second peak data throughput under CL3 timing constraints.
CAS Latency	CL = 3 - defines 3-clock-cycle delay between column address strobe and first valid read data output.
Burst Length	1, 2, 4, 8, or full page - allows flexible data fetch size to match processor/cache line requirements without bus contention.
Refresh Rate	8K cycles / 64 ms (≤85°C) - ensures data retention without external refresh controller intervention in standard industrial environments.
Supply Voltage	3.3 V ± 0.3 V - compatible with legacy LVTTL I/O domains and eliminates need for level-shifting in 3.3V system designs.
Package	TFBGA-54 (8×8 mm², RoHS-compliant, lead-free) - surface-mount footprint optimized for compact industrial PCBs with thermal and signal integrity considerations.

Pinout & Package

W9825G6KB-6 TR is packaged in a 54-ball thin fine-pitch BGA (TFBGA) with 0.8 mm pitch, 8 mm × 8 mm body size, and RoHS-compliant lead-free construction. Ball assignment follows JEDEC-standard SDRAM pinout with dedicated VDD/VSS/VDDQ/VSSQ rails for noise isolation.

Pin/Terminal	Circuit Role	Design Meaning
A0–A12	Address Input	Multiplexed row/column address lines; A10 controls all-bank vs. bank-specific precharge when sampled during command.
BS0, BS1	Bank Select	Two-bit encoding selects one of four internal banks during activate or precharge commands.
DQ0–DQ15	Data I/O	16-bit bidirectional data bus; LDQM/UDQM enable byte-level masking for partial writes without read-modify-write overhead.
/CS, /RAS, /CAS, /WE	Command Control	Active-low command inputs decoded on CLK rising edge to execute bank activate, read, write, precharge, or mode register set.
CLK, CKE	Timing Control	CLK synchronizes all inputs; CKE gates internal clock - low enables power-down, self-refresh, or clock suspend modes.
LDQM, UDQM	I/O Mask	Low-active masks lower/upper 8 bits of DQ bus during reads (Hi-Z output) or writes (data blocking with zero latency).

Key Features

Feature	Design Value
Programmable Mode Register	Enables runtime configuration of burst length, CAS latency, and burst type (sequential/interleave) to match host controller timing profiles.
Auto-precharge Support	Automatically initiates bank precharge after read/write completion when A10 is asserted, reducing software overhead and improving burst efficiency.
Interleaved Bank Access	Allows concurrent activation of multiple banks to overlap precharge and access cycles, achieving continuous data flow without tRC bottlenecks.
Self-refresh Mode	Retains data with internal refresh counter while external clocks are halted - essential for low-power suspend states in battery-backed systems.
LVTTL-Compatible Interface	Direct integration with 3.3V microcontrollers and FPGAs without level shifters, simplifying board design and reducing BOM cost.

Applications

Industrial HMI Display Buffer	Embedded Network Router Memory
Use Scenario: Storing frame buffers and GUI assets for 720p LCD panels in factory-floor HMIs with ambient temperature up to 85°C. IC Role / Device Role / Timing Role: Primary SDRAM acting as display memory controller buffer, interfacing directly with ARM Cortex-A5/A7 SoC via 16-bit LVTTL bus. Use Value: CL3/166 MHz timing ensures pixel data delivery meets 60 Hz refresh deadlines; TFBGA-54 footprint fits space-constrained panel PCBs.	Use Scenario: Packet buffering and forwarding table storage in fanless industrial Ethernet routers deployed in telecom cabinets. IC Role / Device Role / Timing Role: System memory for MIPS-based network processor, supporting simultaneous packet ingress/egress with burst-length-4 reads/writes. Use Value: Four-bank interleaving hides tRP/tRC delays during high-throughput traffic bursts; self-refresh maintains routing state during brief power interruptions.
Medical Diagnostic Imaging Module	Automated Test Equipment (ATE) Controller
Use Scenario: Temporary storage of ultrasound scan line data before DSP processing in portable diagnostic devices. IC Role / Device Role / Timing Role: High-bandwidth intermediate buffer between ADC interface and FPGA-based beamformer, operating at 166 MHz with CL3. Use Value: Full-page burst mode enables rapid transfer of 1024-sample scan lines; 3.3V supply matches analog front-end voltage domain.	Use Scenario: Firmware execution and pattern memory for semiconductor wafer testers requiring deterministic timing and long-term reliability. IC Role / Device Role / Timing Role: Non-volatile program memory extension for Xilinx Zynq SoC, used for test vector loading and result staging. Use Value: Auto-precharge reduces command overhead during high-frequency pattern switching; -6I grade supports extended temperature validation at 85°C.

Industrial HMI Display Buffer

Embedded Network Router Memory

Use Scenario: Storing frame buffers and GUI assets for 720p LCD panels in factory-floor HMIs with ambient temperature up to 85°C.

IC Role / Device Role / Timing Role: Primary SDRAM acting as display memory controller buffer, interfacing directly with ARM Cortex-A5/A7 SoC via 16-bit LVTTL bus.

Use Value: CL3/166 MHz timing ensures pixel data delivery meets 60 Hz refresh deadlines; TFBGA-54 footprint fits space-constrained panel PCBs.

Use Scenario: Packet buffering and forwarding table storage in fanless industrial Ethernet routers deployed in telecom cabinets.

IC Role / Device Role / Timing Role: System memory for MIPS-based network processor, supporting simultaneous packet ingress/egress with burst-length-4 reads/writes.

Use Value: Four-bank interleaving hides tRP/tRC delays during high-throughput traffic bursts; self-refresh maintains routing state during brief power interruptions.

Medical Diagnostic Imaging Module

Automated Test Equipment (ATE) Controller

Use Scenario: Temporary storage of ultrasound scan line data before DSP processing in portable diagnostic devices.

IC Role / Device Role / Timing Role: High-bandwidth intermediate buffer between ADC interface and FPGA-based beamformer, operating at 166 MHz with CL3.

Use Value: Full-page burst mode enables rapid transfer of 1024-sample scan lines; 3.3V supply matches analog front-end voltage domain.

Use Scenario: Firmware execution and pattern memory for semiconductor wafer testers requiring deterministic timing and long-term reliability.

IC Role / Device Role / Timing Role: Non-volatile program memory extension for Xilinx Zynq SoC, used for test vector loading and result staging.

Use Value: Auto-precharge reduces command overhead during high-frequency pattern switching; -6I grade supports extended temperature validation at 85°C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SDRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IS42S16400F-6BLI	Same 4M×4×16 organization, 166 MHz/CL3, TFBGA-54, but requires 2.5V core supply (VDDQ=2.5V) and supports only 1–4 burst lengths.	Not suitable for pure 3.3V systems; lacks full-page burst and interleave mode - limits bandwidth in high-CPU-utilization scenarios.	Select only if migrating from older ISSI-based designs with existing 2.5V I/O rail and no requirement for burst length >4.
MT48LC4M16A2P-6A	Identical 4M×4×16 structure and 166 MHz/CL3 rating, but in TSOP-54 package (not BGA); higher IDD current (4 mA vs. 2 mA) and no self-refresh above 70°C.	TSOP footprint increases PCB area and limits thermal performance; unsuitable for sealed enclosures exceeding 70°C ambient.	Choose only for legacy board re-spins where BGA rework is prohibited and operating temperature remains ≤70°C.

Compared with IS42S16400F-6BLI and MT48LC4M16A2P-6A, W9825G6KB-6 TR offers native 3.3V LVTTL compatibility, full-page burst support, and validated self-refresh up to 85°C - making it optimal for new industrial designs prioritizing thermal margin and interface simplicity.

Availability

W9825G6KB-6 TR is available at Aetrix Electronics and suitable for industrial HMIs, network edge routers, medical imaging modules, and automated test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W9825G6KB-6 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory solutions, including SPI NOR Flash, DDR SDRAM, and mobile RAM products for industrial and automotive markets.

W9825G6KB-6 TR belongs to Winbond's legacy SDR SDRAM product line, designed specifically for cost-sensitive, thermally demanding embedded applications where 3.3V compatibility and proven reliability outweigh DDR migration complexity.

FAQ

What is the maximum operating temperature supported by W9825G6KB-6 TR?

W9825G6KB-6 TR is rated for 0°C to 70°C case temperature per its -6 speed grade. It does not support self-refresh above 85°C, and operation beyond 70°C violates its specified industrial temperature range. For extended temperature use, the -6I variant (–40°C to 85°C) or -6J variant (–40°C to 105°C) must be selected instead of W9825G6KB-6 TR.

Does W9825G6KB-6 TR support full-page burst mode?

Yes, W9825G6KB-6 TR supports full-page burst mode as defined in its mode register configuration. This allows reading or writing all 512 columns in an open page with a single command, maximizing sequential bandwidth. However, auto-precharge is prohibited when full-page burst is active, as stated in section 7.14 of the datasheet.

Can W9825G6KB-6 TR be used with a 2.5V I/O interface?

No, W9825G6KB-6 TR requires a 3.3V ±0.3V supply for both VDD and VDDQ, and its input thresholds are specified for LVTTL logic levels. Using 2.5V I/O would violate DC operating conditions and risk unreliable command recognition or data corruption. It is incompatible with 2.5V-only memory controllers unless level translation is added externally.

What is the function of the LDQM and UDQM pins on W9825G6KB-6 TR?

LDQM (Lower Data Mask) and UDQM (Upper Data Mask) are active-low input pins that control byte-level masking on the 16-bit DQ bus. During reads, asserting either pin places the corresponding 8-bit segment in high-impedance state. During writes, asserting either pin blocks data transfer to that segment with zero latency - eliminating need for read-modify-write cycles in partial updates.

How many refresh cycles does W9825G6KB-6 TR require per 64 ms?

W9825G6KB-6 TR requires exactly 8,192 refresh cycles per 64 ms when operated within its rated temperature range of 0°C to 70°C. This equates to one refresh command every 7.8125 µs on average. The device internally tracks refresh addresses; external controller must issue CBR (CAS-before-RAS) refresh commands at this rate to maintain data integrity.

W9825G6KB-6 TR Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 54-TFBGA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: DRAM

Technology:: SDRAM

Memory Size:: 256Mbit

Memory Organization:: 16M x 16

Memory Interface:: LVTTL

Clock Frequency:: 166 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 5 ns

Voltage - Supply:: 3V ~ 3.6V

Operating Temperature:: 0°C ~ 70°C (TC)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 54-TFBGA (8x8)

W9825G6KB-6 TR FAQ

1.How can I place an order for W9825G6KB-6 TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W9825G6KB-6 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W9825G6KB-6 TR reliable?

The price and inventory of W9825G6KB-6 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W9825G6KB-6 TR is usually 5 days.

3.What payment methods are accepted for W9825G6KB-6 TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W9825G6KB-6 TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W9825G6KB-6 TR?

W9825G6KB-6 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W9825G6KB-6 TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W9825G6KB-6 TR?

For technical support, including W9825G6KB-6 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W9825G6KB-6 TR requirements.

6.How does Aetrix verify that W9825G6KB-6 TR is sourced from the original manufacturer or authorized distributors?

All W9825G6KB-6 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W9825G6KB-6 TR meets industry standards.

7.What is the process for return or replacement of W9825G6KB-6 TR?

All W9825G6KB-6 TR units undergo pre-shipment inspection (PSI). If there is an issue with W9825G6KB-6 TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W9825G6KB-6 TR part is unused and in its original packaging.

Return procedure for W9825G6KB-6 TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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