Winbond Electronics Corporation W9825G6KH-5 TR
- Part No.:
- W9825G6KH-5 TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 54-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
W9825G6KH-5 TR.pdf
- Description:
- IC DRAM 256MBIT PAR 54TSOP II
- Quantity:
- Payment:

- Shipping:

Inventory:3,884
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Product details
Overview
W9825G6KH-5 TR from Winbond is a 4M × 4 banks × 16-bit synchronous DRAM (SDRAM) operating at 200 MHz with CAS Latency 3, 3.3V supply, and TSOP II-54 package. It delivers 200M words/sec bandwidth and supports burst lengths of 1–8 and full-page, enabling high-throughput memory access in embedded controllers and industrial display systems.
For engineers reviewing the W9825G6KH-5 TR datasheet, W9825G6KH-5 TR pinout, W9825G6KH-5 TR application, or W9825G6KH-5 TR equivalent, key selection criteria include CL3 timing compliance at 200 MHz, self-refresh current ≤2 mA, LVTTL interface compatibility, and TSOP II-54 mechanical fit for legacy SDRAM footprints.
Technical Context
This SDRAM implements four independent memory banks with interleaved activation to hide precharge latency, supporting seamless page-mode and burst-mode transfers. Its programmable Mode Register configures burst type (sequential/interleave), length (1–8/full), and CAS latency (2 or 3), allowing system-level optimization of throughput versus latency.
Functional operation relies on precise command decoding synchronized to CLK rising edges, with CKE-gated power states (Power Down, Self Refresh, Clock Suspend) and dual DQM masking (LDQM/UDQM) for byte-level write control. All banks must be precharged before Mode Register Set, and Auto-precharge is triggered by A10=HIGH during Read/Write commands.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 4,194,304 words × 4 banks × 16 bits - provides 128 Mbit total capacity with bank-level parallelism |
| Max Clock Frequency | 200 MHz - enables 200M words/sec peak data rate under CL3 timing |
| CAS Latency | CL = 3 - defines 3-clock-cycle delay between column address strobe and first valid read data |
| Burst Length | 1, 2, 4, 8, or full page - determines consecutive column accesses per command without new address input |
| Supply Voltage | 3.3 V ± 0.3 V - requires stable LVTTL-compatible power rail; VDDQ separated for I/O noise immunity |
| Refresh Rate | 8K cycles / 64 ms @ TA ≤ 85°C - mandates periodic refresh to retain data; self-refresh supported |
| Operating Temperature | 0°C to 70°C - commercial-grade thermal range suitable for non-extended-environment applications |
Pinout & Package
W9825G6KH-5 TR is housed in a RoHS-compliant, lead-free TSOP II-54 package (400 mil, 0.80 mm pitch), with dedicated VDD/VSS and isolated VDDQ/VSSQ supplies for logic and I/O domains.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A12 | Address Input | Multiplexed row/column address lines; A10 controls all-bank vs. bank-select precharge |
| BS0, BS1 | Bank Select | Two-bit encoding selects one of four internal banks during ACTIVATE or PRECHARGE |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; LDQM/UDQM mask lower/upper byte independently |
| CS, RAS, CAS, WE | Command Control | Four active-low signals decoded on CLK rising edge to define operation (e.g., READ = CS/L, RAS/H, CAS/L, WE/H) |
| CLK, CKE | Clock Interface | CLK synchronizes all inputs; CKE enables/disables clock domain - low enters Power Down or Self Refresh |
| LDQM, UDQM | I/O Mask | Asserted high during read places corresponding DQ byte in Hi-Z; during write blocks that byte from being written |
Key Features
| Feature | Design Value |
|---|---|
| Programmable Burst Mode | Configurable sequential or interleave addressing via Mode Register - optimizes locality-aware access patterns |
| Auto-precharge Support | A10-driven automatic bank precharge after Read/Write - eliminates explicit PRECHARGE command overhead |
| Dual DQM Masking | Independent LDQM/UDQM control over lower/upper 8-bit data lanes - enables precise byte-write granularity |
| Multi-Power-State Management | Self Refresh (IDD6 ≤2 mA), Power Down, and Clock Suspend modes - reduces active/idle power in battery-sensitive designs |
| LVTTL-Compatible Interface | 3.3V logic thresholds with separate VDDQ/VSSQ - ensures signal integrity and interoperability with legacy microcontrollers |
Applications
| Industrial HMI Display Controller | Legacy PC Embedded Main Memory |
|---|---|
Use Scenario: Driving 1024×768 TFT panels with frame buffer storage in cost-sensitive PLC operator terminals. IC Role / Device Role / Timing Role: SDRAM serves as primary video frame buffer, accepting burst writes from GPU engine and supplying sequential reads to display controller at 60 Hz refresh. Use Value: 200 MHz CL3 timing and 16-bit bus width deliver sufficient bandwidth for dual-buffered 24-bit RGB output without external memory bottleneck. | Use Scenario: Providing main memory for x86-compatible single-board computers used in factory automation gateways. IC Role / Device Role / Timing Role: Acts as system RAM interfaced directly to Intel 440BX-equivalent northbridge; operates in interleaved bank mode to sustain CPU cache-line fills. Use Value: TSOP II-54 footprint and LVTTL signaling ensure drop-in compatibility with legacy SDRAM-based motherboard layouts. |
| Network Router Packet Buffer | Medical Imaging Data Acquisition Module |
Use Scenario: Storing transient packet headers and metadata in Layer 3 switching ASICs requiring deterministic latency. IC Role / Device Role / Timing Role: Functions as shared buffer between ingress/egress engines; uses burst-length-4 reads/writes aligned to 32-byte cache lines. Use Value: CAS Latency 3 and tRCD = 20 ns guarantee predictable access timing critical for QoS scheduling logic. | Use Scenario: Capturing real-time ultrasound echo data streams at 40 MSPS before FPGA-based beamforming processing. IC Role / Device Role / Timing Role: High-speed circular buffer staging raw ADC samples; configured for full-page burst writes to maximize sustained write throughput. Use Value: 200 MHz clock and 16-bit bus support 320 MB/s continuous write rate, exceeding required 160 MB/s sensor interface bandwidth. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS42S16400F-5BLI | Same 4M×4×16 organization, 200 MHz/CL3, TSOP II-54, but supports industrial temp (−40°C to +85°C) and has tighter tRC/tRP specs | Required where extended temperature operation or stricter timing margins are needed | Select IS42S16400F-5BLI when ambient exceeds 70°C or board-level timing margin analysis shows violation risk with W9825G6KH-5 TR |
| MT48LC4M16A2P-6A | Identical pinout and electrical interface, but rated for 166 MHz/CL3 only; no -5 speed grade available | Suitable for systems where 200 MHz bandwidth is not required and cost is prioritized | Choose MT48LC4M16A2P-6A only if design operates ≤166 MHz and requires second-source availability from Micron |
Compared with IS42S16400F-5BLI, W9825G6KH-5 TR offers lower cost for commercial-temperature applications but lacks extended thermal qualification; versus MT48LC4M16A2P-6A, it delivers higher bandwidth at same footprint but with narrower speed-grade availability.
Availability
W9825G6KH-5 TR is available at Aetrix Electronics and suitable for industrial HMI displays, legacy PC embedded systems, network packet buffering, medical imaging acquisition, and factory automation controllers requiring stable component supply across multi-year production cycles.
Supply support for W9825G6KH-5 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory and microcontroller solutions, with global manufacturing and quality certifications.
W9825G6KH-5 TR belongs to Winbond's standard SDRAM product line designed for cost-effective, pin-compatible replacement of legacy synchronous DRAM in industrial and embedded computing platforms.
FAQ
What is the maximum data bandwidth of the W9825G6KH-5 TR?
The W9825G6KH-5 TR achieves a maximum data bandwidth of 200 million words per second. This is derived from its 200 MHz clock frequency and 16-bit data bus width, delivering 3.2 GB/s theoretical peak transfer rate under ideal burst conditions. The actual sustained bandwidth depends on command efficiency, bank interleaving, and CAS latency overhead in the target system design.
Does the W9825G6KH-5 TR support self-refresh mode, and what is its maximum current draw in that state?
Yes, the W9825G6KH-5 TR supports self-refresh mode with a maximum IDD6 current of 2 mA at 0°C to 70°C ambient temperature. This low-power retention mode allows the device to maintain data integrity without external refresh commands, making it suitable for battery-backed or low-power standby applications. Note that self-refresh is not supported above 85°C ambient.
What package type and pin count does the W9825G6KH-5 TR use?
The W9825G6KH-5 TR uses a TSOP II-54 package with 54 pins in a 400-mil body width and 0.80 mm lead pitch. It is RoHS-compliant and lead-free, matching industry-standard SDRAM footprints for easy integration into existing PCB layouts designed for similar-density SDRAMs.
Can the W9825G6KH-5 TR operate at CAS Latency 2, and under what conditions?
Yes, the W9825G6KH-5 TR supports CAS Latency 2 at reduced clock frequencies - specifically at 133 MHz or lower, as documented in the order information table. At its rated 200 MHz speed grade (-5), CL2 is not guaranteed; CL3 is the specified latency. System designers must configure the Mode Register accordingly and validate timing margins when using CL2 in non-standard speed bins.
How does the W9825G6KH-5 TR handle burst termination and partial writes?
The W9825G6KH-5 TR supports burst termination via the Burst Stop command (CS/L, WE/L, RAS/H, CAS/H), which halts an ongoing full-page burst while keeping the bank open. For partial writes, LDQM and UDQM enable selective masking of lower or upper 8-bit data lanes on every write cycle, allowing byte-granularity updates without affecting adjacent data - critical for protocol header manipulation or status flag updates.
W9825G6KH-5 TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 54-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM
- Memory Size:
- 256Mbit
- Memory Organization:
- 16M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 5 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-TSOP II
W9825G6KH-5 TR FAQ
1.How can I place an order for W9825G6KH-5 TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W9825G6KH-5 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W9825G6KH-5 TR reliable?
The price and inventory of W9825G6KH-5 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W9825G6KH-5 TR is usually 5 days.
3.What payment methods are accepted for W9825G6KH-5 TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W9825G6KH-5 TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W9825G6KH-5 TR?
W9825G6KH-5 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W9825G6KH-5 TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W9825G6KH-5 TR?
For technical support, including W9825G6KH-5 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W9825G6KH-5 TR requirements.
6.How does Aetrix verify that W9825G6KH-5 TR is sourced from the original manufacturer or authorized distributors?
All W9825G6KH-5 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W9825G6KH-5 TR meets industry standards.
7.What is the process for return or replacement of W9825G6KH-5 TR?
All W9825G6KH-5 TR units undergo pre-shipment inspection (PSI). If there is an issue with W9825G6KH-5 TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W9825G6KH-5 TR part is unused and in its original packaging.
Return procedure for W9825G6KH-5 TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W9825G6KH-5 TR Tags

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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology

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AT21CS01-STUM10-T
Microchip Technology

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AT24C02C-SSHM-T
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics

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AT24CS02-SSHM-T
Microchip Technology

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93LC46BT-I/OT
Microchip Technology

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AT24C04C-SSHM-T
Microchip Technology

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24LC01BT-I/SN
Microchip Technology

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24AA02UIDT-I/OT
Microchip Technology

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AT24C08C-STUM-T
Microchip Technology
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