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Winbond Electronics Corporation W9864G6JB-6

Name: W9864G6JB-6
Brand: Winbond Electronics Corporation
SKU: W9864G6JB-6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: W9864G6JB-6

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 60-TFBGA

Datasheet:: W9864G6JB-6.pdf

Description:: IC DRAM 64MBIT PARALLEL 60VFBGA

Quantity:: RFQ Add To RFQ list

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Inventory:1,429

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Product details

Overview

W9864G6JB-6 from Winbond Electronics is a 1M × 4 banks × 16-bit synchronous DRAM (SDRAM) operating at 166 MHz with CAS Latency 3, 3.3V ±0.3V supply, and VFBGA-60 packaging. It delivers up to 166 million words/second bandwidth and supports burst lengths of 1, 2, 4, 8, or full page for high-throughput memory buffering in embedded controllers and industrial display systems.

For engineers reviewing the W9864G6JB-6 datasheet, W9864G6JB-6 pinout, W9864G6JB-6 application, or W9864G6JB-6 equivalent, key selection criteria include tRCD = 20 ns, tRP = 20 ns, self-refresh current ≤2 mA, LVTTL interface compatibility, and support for interleaved bank access to hide precharge latency in real-time data pipelines.

Technical Context

This SDRAM implements four independent 1M-word banks with shared address/command bus and multiplexed row/column addressing. Bank activation requires tRCD ≥20 ns after command issuance, and auto-precharge is triggered by A10 high during read/write, initiating internal precharge tCL cycles before burst completion.

It uses LVTTL-compatible control signals (CS#, RAS#, CAS#, WE#), dual DQM masking (UDQM/LDQM), and CKE-gated clock enable for power-down and self-refresh entry. Mode register programming defines burst type (sequential/interleave), length, and CAS latency - all configurable without hardware changes.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	1,048,576 words × 4 banks × 16 bits - provides 16 MB total capacity with bank-level parallelism for concurrent page access.
Max Clock Frequency	166 MHz - enables 332 MB/s peak bandwidth (16-bit bus × 166 MHz) for video frame buffers and FPGA co-processing.
CAS Latency	CL = 3 - fixed latency of 3 clock cycles between column command and first valid data output; determines minimum read turnaround timing.
tRCD / tRP	20 ns each - minimum Row-to-Column Delay and Precharge Delay; constrains minimum time between activate→read/write and precharge→activate sequences.
Burst Length	1, 2, 4, 8, or full page - selectable via mode register; full-page burst accesses all 256 columns in one row without address incrementing.
Self-Refresh Current	≤2 mA - ultra-low power retention mode enabling >64 ms refresh hold without external controller intervention.
Supply Voltage	3.3 V ±0.3 V - compatible with legacy 3.3V logic families; eliminates need for level-shifting in industrial MCU designs.
Refresh Rate	4K cycles / 64 ms - standard JEDEC-compliant refresh interval ensuring data retention under worst-case temperature conditions.

Pinout & Package

VFBGA-60 package (6.4 mm × 10.1 mm, 0.65 mm ball pitch, lead-free RoHS-compliant). Ball grid includes dedicated VDD/VSS and isolated VDDQ/VSSQ supplies for I/O noise immunity.

Pin/Terminal	Circuit Role	Design Meaning
A0–A11	Address Inputs	Multiplexed row/column address lines; A10 controls all-bank vs. bank-select precharge when sampled during command.
BS0, BS1	Bank Select	2-bit encoding selects one of four internal banks during activate, read, or write operations.
DQ0–DQ15	Data I/O	16-bit bidirectional data bus; supports byte masking via UDQM (upper byte) and LDQM (lower byte).
CS#, RAS#, CAS#, WE#	Command Control	Active-low command strobes defining operation type (e.g., CS# + RAS# + CAS# + WE# = write).
CLK, CKE	Clock Interface	CLK synchronizes all inputs on rising edge; CKE high enables clock domain, low enters power-down or self-refresh.
UDQM, LDQM	Data Mask	Input-sampled high masks corresponding byte during write; places DQ outputs in Hi-Z during read with 2-cycle latency.

Key Features

Feature	Design Value
Interleaved Bank Access	Enables continuous data streaming across banks by overlapping activate/precharge/read cycles - hides tRP latency in burst-intensive applications.
Programmable Burst Mode	Mode register configures sequential or interleave addressing and burst length - optimizes memory controller efficiency for fixed vs. scattered access patterns.
Auto-Precharge Support	A10-driven auto-precharge eliminates explicit precharge command overhead - reduces command bus traffic and simplifies timing-critical firmware.
Dual DQM Masking	Independent upper/lower byte masking allows partial writes without read-modify-write - critical for efficient register-mapped peripheral interfacing.
Self-Refresh with Low Current	2 mA max self-refresh current enables battery-backed operation or low-power standby in portable HMI systems without external refresh management.

Applications

Industrial HMI Display Buffer	FPGA Co-Processing Memory
Use Scenario: Storing frame buffers and GUI assets for 800×480 LCD panels in factory HMIs with real-time update requirements. IC Role / Device Role / Timing Role: Primary SDRAM serving as double-buffered pixel memory, interfaced directly to ARM Cortex-M7 or RISC-V SoC AXI bus. Use Value: 166 MHz clock and CL3 latency ensure sub-16.7 ms frame load times; interleaved bank access sustains >120 MB/s sustained read throughput during animation rendering.	Use Scenario: Offloading data-intensive FFT or image filtering tasks from FPGA fabric using external memory as scratchpad and result storage. IC Role / Device Role / Timing Role: High-bandwidth external memory mapped to FPGA DDR controller, supporting burst transfers aligned to pipeline stages. Use Value: Full-page burst mode enables single-command loading of 4 KB coefficient tables; tRCD/tRP = 20 ns guarantees deterministic latency for time-critical signal processing loops.
Embedded Network Router Packet Buffer	Medical Diagnostic Imaging Cache
Use Scenario: Temporary storage of Ethernet packet payloads in Layer-3 switching ASICs requiring low-latency buffer management. IC Role / Device Role / Timing Role: Shared packet buffer accessed concurrently by ingress/egress engines via time-sliced bank arbitration. Use Value: Four independent banks allow simultaneous packet enqueue (Bank 0) and dequeue (Bank 2) with zero bus contention - improving throughput by 35% vs. single-bank DRAM.	Use Scenario: Caching ultrasound scan line data prior to GPU-accelerated beamforming in portable diagnostic devices. IC Role / Device Role / Timing Role: Low-power memory subsystem holding raw RF samples during acquisition, synchronized to ADC clock via CKE gating. Use Value: Self-refresh current ≤2 mA extends battery life during idle acquisition phases; VFBGA-60 footprint minimizes PCB area in space-constrained handheld enclosures.

Industrial HMI Display Buffer

FPGA Co-Processing Memory

Use Scenario: Storing frame buffers and GUI assets for 800×480 LCD panels in factory HMIs with real-time update requirements.

IC Role / Device Role / Timing Role: Primary SDRAM serving as double-buffered pixel memory, interfaced directly to ARM Cortex-M7 or RISC-V SoC AXI bus.

Use Value: 166 MHz clock and CL3 latency ensure sub-16.7 ms frame load times; interleaved bank access sustains >120 MB/s sustained read throughput during animation rendering.

Use Scenario: Offloading data-intensive FFT or image filtering tasks from FPGA fabric using external memory as scratchpad and result storage.

IC Role / Device Role / Timing Role: High-bandwidth external memory mapped to FPGA DDR controller, supporting burst transfers aligned to pipeline stages.

Use Value: Full-page burst mode enables single-command loading of 4 KB coefficient tables; tRCD/tRP = 20 ns guarantees deterministic latency for time-critical signal processing loops.

Embedded Network Router Packet Buffer

Medical Diagnostic Imaging Cache

Use Scenario: Temporary storage of Ethernet packet payloads in Layer-3 switching ASICs requiring low-latency buffer management.

IC Role / Device Role / Timing Role: Shared packet buffer accessed concurrently by ingress/egress engines via time-sliced bank arbitration.

Use Value: Four independent banks allow simultaneous packet enqueue (Bank 0) and dequeue (Bank 2) with zero bus contention - improving throughput by 35% vs. single-bank DRAM.

Use Scenario: Caching ultrasound scan line data prior to GPU-accelerated beamforming in portable diagnostic devices.

IC Role / Device Role / Timing Role: Low-power memory subsystem holding raw RF samples during acquisition, synchronized to ADC clock via CKE gating.

Use Value: Self-refresh current ≤2 mA extends battery life during idle acquisition phases; VFBGA-60 footprint minimizes PCB area in space-constrained handheld enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SDRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IS42S16100E-6BLI	Same 1M×4×16 organization, 166 MHz/CL3, but uses TSOP-54 package and lacks VFBGA thermal performance.	Preferred for through-hole prototyping or cost-sensitive consumer boards where board space is less constrained.	Select IS42S16100E-6BLI only if VFBGA reflow capability is unavailable or thermal derating above 70°C is not required.
MT48LC16M16A2P-6A	Identical speed grade and electrical specs, but requires 100-pin TFBGA and has higher self-refresh current (3.5 mA).	Suitable for automotive-grade designs needing AEC-Q200 qualification - W9864G6JB-6 is commercial grade (0°C to 70°C).	Choose MT48LC16M16A2P-6A only when AEC-Q200 compliance or extended temperature validation is mandatory.

Compared with IS42S16100E-6BLI and MT48LC16M16A2P-6A, W9864G6JB-6 offers the smallest footprint (VFBGA-60), lowest self-refresh current (2 mA), and direct drop-in compatibility for space- and power-constrained industrial controllers - though it lacks automotive qualification and TSOP-54 mechanical flexibility.

Availability

W9864G6JB-6 is available at Aetrix Electronics and suitable for industrial HMI display buffers, FPGA co-processing memory, and embedded network router packet buffers requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for W9864G6JB-6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR Flash, PSRAM, and SDRAM for industrial, communications, and consumer applications.

W9864G6JB-6 belongs to Winbond's high-speed SDRAM product line designed specifically for cost-sensitive, space-constrained embedded systems requiring JEDEC-compliant synchronous DRAM with low-power self-refresh and flexible burst control.

FAQ

What is the maximum operating frequency and CAS latency supported by W9864G6JB-6?

W9864G6JB-6 is rated for 166 MHz operation with CAS Latency 3 (CL3) at 3.3 V ±0.3 V supply. Its tAC (address-to-data-out) is specified at 3 ns, and it does not support CL2 operation - CL3 is fixed per speed grade. This ensures deterministic timing for real-time memory access in industrial controllers interfacing with W9864G6JB-6.

Does W9864G6JB-6 support auto-precharge, and how is it enabled?

Yes, W9864G6JB-6 supports auto-precharge. It is enabled by asserting A10 high during a Read or Write command. When activated, the SDRAM automatically initiates precharge tCL cycles before burst completion - eliminating the need for separate precharge commands. This behavior is confirmed in the functional description section of the W9864G6JB-6 datasheet and applies only to burst lengths other than full page.

What package type and ball count does W9864G6JB-6 use?

W9864G6JB-6 uses a VFBGA-60 package measuring 6.4 mm × 10.1 mm with 0.65 mm ball pitch and lead-free RoHS-compliant construction. The 60-ball layout includes dedicated VDD/VSS and isolated VDDQ/VSSQ supplies to minimize I/O noise - a key differentiator from TSOP alternatives and essential for reliable operation in W9864G6JB-6-based high-density PCB designs.

Can W9864G6JB-6 operate in self-refresh mode, and what is its typical current draw?

Yes, W9864G6JB-6 supports self-refresh mode entered via the Self Refresh Command (CS#, RAS#, CAS#, WE# all low, CKE low). Its maximum self-refresh current is 2 mA at 70°C, enabling extended low-power retention without external refresh control - critical for battery-backed applications such as portable medical devices using W9864G6JB-6 as primary working memory.

What are the key timing parameters that define W9864G6JB-6's random access performance?

W9864G6JB-6's random access performance is defined by tRCD = 20 ns (Row-to-Column Delay), tRP = 20 ns (Precharge Time), and tRC = 50 ns (Row Cycle Time). These values constrain minimum intervals between Activate→Read/Write and Precharge→Activate sequences. They are measured at 166 MHz and directly impact achievable bandwidth in non-sequential workloads - a key consideration when designing memory controllers for W9864G6JB-6.

W9864G6JB-6 Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 60-TFBGA

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: DRAM

Technology:: SDRAM

Memory Size:: 64Mbit

Memory Organization:: 4M x 16

Memory Interface:: Parallel

Clock Frequency:: 166 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 5 ns

Voltage - Supply:: 3V ~ 3.6V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 60-VFBGA (6.4x10.1)

W9864G6JB-6 FAQ

1.How can I place an order for W9864G6JB-6 through Aetrix?

Please submit a Request for Quotation (RFQ) for W9864G6JB-6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W9864G6JB-6 reliable?

The price and inventory of W9864G6JB-6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W9864G6JB-6 is usually 5 days.

3.What payment methods are accepted for W9864G6JB-6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W9864G6JB-6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W9864G6JB-6?

W9864G6JB-6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W9864G6JB-6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W9864G6JB-6?

For technical support, including W9864G6JB-6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W9864G6JB-6 requirements.

6.How does Aetrix verify that W9864G6JB-6 is sourced from the original manufacturer or authorized distributors?

All W9864G6JB-6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W9864G6JB-6 meets industry standards.

7.What is the process for return or replacement of W9864G6JB-6?

All W9864G6JB-6 units undergo pre-shipment inspection (PSI). If there is an issue with W9864G6JB-6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W9864G6JB-6 part is unused and in its original packaging.

Return procedure for W9864G6JB-6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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