Winbond Electronics Corporation W9864G6JB-6I TR

Overview

W9864G6JB-6I TR from Winbond is a 1M × 4 banks × 16-bit synchronous DRAM (SDRAM) operating at 166 MHz with CAS Latency 3, 3.3V ±0.3V supply, and industrial temperature range (–40°C to +85°C). It delivers up to 166 million words/second bandwidth and supports burst lengths of 1, 2, 4, 8, or full page for high-throughput memory buffering in embedded controllers and display subsystems.

For engineers reviewing the W9864G6JB-6I TR datasheet, W9864G6JB-6I TR pinout, W9864G6JB-6I TR application, or W9864G6JB-6I TR equivalent, key selection criteria include tRCD = 20 ns, tRP = 20 ns, self-refresh current ≤2 mA, VFBGA-60 package compatibility, and LVTTL interface timing compliance with JEDEC SDRAM standards.

Technical Context

This SDRAM implements four independent 1M-word banks with shared address/command bus and multiplexed row/column addressing. Internal refresh counter executes 4K cycles per 64 ms, and programmable Mode Register configures burst type (sequential/interleaved), length, and CAS latency.

It supports auto-precharge on read/write via A10 assertion, clock suspend mode via CKE low during active bank operation, and power-down mode with CKE gating. DQ masking uses separate LDQM/UDQM pins for byte-level write control and output tri-state management during read interruption.

Key Specifications

Pinout & Package

VFBGA-60 package, 6.4 mm × 10.1 mm body, 0.65 mm ball pitch, RoHS-compliant lead-free construction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SDRAM applications.

Compared with IS42S16100E-6BLI, W9864G6JB-6I TR offers identical timing and functionality in a smaller VFBGA-60 package ideal for compact designs; versus MT48LC16M16A2P-6A:G, it trades density and flexibility for lower cost and simpler initialization in fixed-capacity applications.

Availability

W9864G6JB-6I TR is available at Aetrix Electronics and suitable for graphics frame buffers, industrial HMIs, embedded video decoders, and network edge router buffers requiring stable component supply across extended temperature ranges.

Supply support for W9864G6JB-6I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory, flash, and trusted computing solutions since 1987.

The W9864G6JB series belongs to Winbond's industrial SDRAM product line, designed specifically for cost-sensitive, space-constrained embedded systems requiring reliable operation from –40°C to +85°C without performance compromise.

FAQ

What is the maximum operating frequency and CAS latency of the W9864G6JB-6I TR?

The W9864G6JB-6I TR is rated for 166 MHz maximum clock frequency with fixed CAS Latency 3. This means the device requires exactly three clock cycles between issuing a column read command and the appearance of the first valid data word on DQ pins. The -6I suffix confirms industrial temperature qualification and CL3 timing compliance per JEDEC standard.

Does the W9864G6JB-6I TR support self-refresh mode, and what is its typical current draw?

Yes, the W9864G6JB-6I TR supports self-refresh mode, entering it upon receipt of the Self Refresh Command (CS#, RAS#, CAS# low, WE# high, CKE low). Its typical self-refresh current is ≤2 mA, as specified in the order information table. This enables data retention during host processor sleep states without external refresh controller intervention.

What package type and ball count does the W9864G6JB-6I TR use?

The W9864G6JB-6I TR uses a VFBGA-60 package: very thin fine-pitch ball grid array with 60 solder balls arranged in a 6.4 mm × 10.1 mm body, 0.65 mm pitch, and 0.4 mm ball diameter. This package is RoHS-compliant and lead-free, optimized for high-density PCB layouts in space-constrained embedded applications.

How does auto-precharge work on the W9864G6JB-6I TR, and which pin controls it?

Auto-precharge on the W9864G6JB-6I TR is triggered by asserting A10 high during a READ or WRITE command. When enabled, the SDRAM automatically initiates precharge of the accessed bank after the burst completes - eliminating the need for a separate PRECHARGE command. This reduces command overhead and improves effective bandwidth in burst-intensive applications.

Can the W9864G6JB-6I TR be used in systems requiring LVTTL-level signaling only?

Yes, the W9864G6JB-6I TR uses LVTTL-compatible input/output signaling with 3.3 V ±0.3 V supply, matching standard 3.3 V logic families. It does not support SSTL, HSTL, or DDR-specific signaling levels. All command, address, and data signals conform to LVTTL voltage thresholds and timing, ensuring interoperability with legacy microcontrollers and FPGAs featuring LVTTL I/O banks.