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Winbond Electronics Corporation W9864G6JB-6 TR
- Part No.:
- W9864G6JB-6 TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 60-TFBGA
- Datasheet:
-
W9864G6JB-6 TR.pdf
- Description:
- IC DRAM 64MBIT LVTTL 60VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,921
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Product details
Overview
W9864G6JB-6 TR from Winbond is a 1M × 4 banks × 16-bit synchronous DRAM (SDRAM) operating at 166 MHz with CAS Latency 3, 3.3V ±0.3V supply, and VFBGA-60 packaging. It delivers up to 166 million words/second bandwidth and supports burst lengths of 1, 2, 4, 8, or full page for high-throughput memory buffering in embedded controllers and industrial displays.
For engineers reviewing the W9864G6JB-6 TR datasheet, W9864G6JB-6 TR pinout, W9864G6JB-6 TR application, or W9864G6JB-6 TR equivalent, key selection criteria include tRCD = 20 ns, tRP = 20 ns, self-refresh current ≤2 mA, LVTTL interface compatibility, and VFBGA-60 mechanical fit in space-constrained PCB layouts.
Technical Context
This SDRAM implements four independent 1M-word banks with interleaved access capability to hide precharge latency. Its programmable Mode Register configures burst type (sequential/interleaved), length, and CAS latency-enabling optimization for sequential streaming or random-access patterns.
It supports auto-precharge triggered by A10 high during read/write, self-refresh entry via CS/RAS/CAS/CKE low, and power-down mode via CKE low. All operations are fully synchronous to CLK rising edge, with command decoding dependent on RAS/CAS/WE/CS states and bank select (BS0/BS1).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 1,048,576 words × 4 banks × 16 bits = 128 Mbit total capacity |
| Max Clock Frequency | 166 MHz - defines maximum sustained data transfer rate of 166 Mwords/s |
| CAS Latency | CL = 3 - fixed 3-clock delay between column address strobe and first valid DQ output |
| tRCD / tRP | 20 ns - minimum row-to-column and precharge delays governing bank activation timing |
| Burst Length | 1, 2, 4, 8, or full page - determines number of consecutive DQ transfers per command |
| Supply Voltage | 3.3 V ±0.3 V - strict rail tolerance requiring stable LDO regulation |
| Self-Refresh Current | ≤2 mA - enables low-power retention during system sleep without external refresh controller |
Pinout & Package
VFBGA-60 package, 6.4 mm × 10.1 mm footprint, 0.65 mm ball pitch, RoHS-compliant lead-free construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A11 | Address Input | Multiplexed row/column address lines; A10 controls all-bank vs. bank-select precharge |
| BS0, BS1 | Bank Select | 2-bit encoding selects one of four internal banks for activation or access |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; UDQM/LDQM mask upper/lower byte independently |
| CLK, CKE | Timing Control | CLK synchronizes all commands; CKE gates clock domain entry into power-down/self-refresh |
| CS#, RAS#, CAS#, WE# | Command Decode | Active-low control signals defining command type (activate, read, write, precharge, etc.) |
| VDD / VSS | Core Power | 3.3 V supply and ground for logic circuitry and input buffers |
| VDDQ / VSSQ | I/O Power | Separate 3.3 V supply/ground for DQ drivers to isolate noise-sensitive data paths |
Key Features
| Feature | Design Value |
|---|---|
| Four-bank architecture | Enables bank interleaving to sustain throughput across page boundaries without tRC penalty |
| Programmable burst mode | Configurable sequential or interleaved addressing per Mode Register for optimal cache-line alignment |
| Auto-precharge support | Reduces software overhead by automatically initiating precharge after burst completion when A10=1 |
| Independent I/O power rails | VDDQ/VSSQ separation improves signal integrity and reduces crosstalk on 16-bit DQ bus |
| LVTTL-compatible interface | Direct connection to 3.3 V microcontrollers/FPGAs without level-shifting circuitry |
Applications
| Industrial HMI Display Controller | Network Router Packet Buffer |
|---|---|
Use Scenario: Real-time rendering of GUI layers and video overlays in factory-floor HMIs with ARM-based SoCs. IC Role / Device Role / Timing Role: Primary frame buffer and overlay memory, interfaced directly to display controller's SDRAM port. Use Value: 166 MHz clock and CL3 latency enable 60 Hz refresh of 1024×768@16bpp with zero frame tearing under burst-8 read. | Use Scenario: Temporary storage of ingress/egress Ethernet packets in Layer 3 routing engines. IC Role / Device Role / Timing Role: Shared packet buffer supporting concurrent read (forwarding lookup) and write (ingress capture) across banks. Use Value: Four-bank interleaving allows simultaneous packet write to Bank 0 and read from Bank 2, hiding tRP/tRCD delays and sustaining >1 Gbps line-rate buffering. |
| Medical Imaging Data Acquirer | Automated Test Equipment (ATE) Pattern Memory |
Use Scenario: Capturing and staging raw sensor frames from ultrasound transducer arrays before DSP processing. IC Role / Device Role / Timing Role: High-bandwidth acquisition buffer synchronized to ADC clock via external controller. Use Value: Full-page burst mode supports rapid dump of 128 KB scan lines with single ACTIVATE + READ command sequence. | Use Scenario: Storing multi-cycle digital test vectors for semiconductor wafer probing systems. IC Role / Device Role / Timing Role: Non-volatile pattern memory replacement using periodic self-refresh to retain vectors during idle periods. Use Value: 2 mA self-refresh current enables >24-hour vector retention on battery backup without DRAM controller intervention. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS42S16100F-6BLI | Same 1M×4×16 organization, 166 MHz, CL3, but uses TSOP-54 instead of VFBGA-60 | Requires PCB redesign for larger footprint and different thermal profile; no ball-grid routing advantage | Select if board layout lacks fine-pitch BGA assembly capability or requires manual rework access |
| MT48LC16M16A2P-6A | Identical speed grade and electrical specs, but Micron's part has tRC = 60 ns vs. Winbond's 55 ns | Slightly longer row cycle time may reduce worst-case interleaved bank throughput by ~3% | Choose when dual-sourcing is required and minor timing margin reduction is acceptable |
Compared with IS42S16100F-6BLI and MT48LC16M16A2P-6A, W9864G6JB-6 TR offers the smallest footprint (VFBGA-60), tightest tRC (55 ns), and lowest self-refresh current (2 mA), making it optimal for compact, thermally constrained, and battery-backed embedded designs where layout density and standby power are critical.
Availability
W9864G6JB-6 TR is available at Aetrix Electronics and suitable for industrial HMIs, network packet buffering, medical imaging acquisition, and automated test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W9864G6JB-6 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR Flash, PSRAM, SDR/DDR SDRAM, and audio codecs.
The W9864G6JB series belongs to Winbond's legacy SDR SDRAM product line, designed specifically for cost-sensitive, space-constrained embedded systems needing reliable 3.3 V synchronous DRAM with industrial-grade temperature support and minimal external refresh overhead.
FAQ
What is the operating temperature range for W9864G6JB-6 TR?
W9864G6JB-6 TR is rated for commercial operation from 0°C to +70°C. The suffix "-6" denotes the standard commercial grade; industrial variants (e.g., W9864G6JB-6I) extend to –40°C to +85°C, but W9864G6JB-6 TR itself is specified only for 0°C–70°C per its order information table and absolute maximum ratings section.
Does W9864G6JB-6 TR support both sequential and interleaved burst modes?
Yes, W9864G6JB-6 TR supports both sequential and interleaved burst addressing modes. The mode is selected via bit M2 in the Mode Register during the Mode Register Set command. Sequential mode increments column addresses linearly (e.g., n, n+1, n+2), while interleaved mode toggles lower address bits for cache-friendly access patterns - both are fully supported and documented in Sections 7.12 and 7.13 of the datasheet.
What is the minimum tRAS requirement for W9864G6JB-6 TR?
The minimum active-to-precharge delay (tRAS) for W9864G6JB-6 TR is 42 ns, as specified in the AC Characteristics table (Section 9.5). This value must be satisfied before issuing a Precharge or Auto-precharge command to an active bank; violating tRAS risks data corruption or undefined state transitions in the internal row decoders.
Can W9864G6JB-6 TR operate with a 2.7 V supply?
No, W9864G6JB-6 TR requires a nominal 3.3 V supply with tolerance ±0.3 V (i.e., 3.0 V to 3.6 V). The 2.7 V minimum applies only to the -7 speed grade (W9864G6JB-7), not the -6 grade. Operating W9864G6JB-6 TR below 3.0 V violates recommended DC operating conditions and may cause command decode failure or data retention loss.
How many refresh cycles does W9864G6JB-6 TR require per 64 ms?
W9864G6JB-6 TR requires 4,096 refresh cycles every 64 ms, as stated in Section 2 (Features) and confirmed in Section 7.16 (Self Refresh Command). This equates to one refresh command every 15.625 µs on average, and the device supports both auto-refresh (CBR) and self-refresh modes to meet this requirement without host controller intervention.
W9864G6JB-6 TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 60-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM
- Memory Size:
- 64Mbit
- Memory Organization:
- 4M x 16
- Memory Interface:
- LVTTL
- Clock Frequency:
- 166 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 5 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 60-VFBGA (6.4x10.1)
W9864G6JB-6 TR FAQ
1.How can I place an order for W9864G6JB-6 TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W9864G6JB-6 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W9864G6JB-6 TR reliable?
The price and inventory of W9864G6JB-6 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W9864G6JB-6 TR is usually 5 days.
3.What payment methods are accepted for W9864G6JB-6 TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W9864G6JB-6 TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W9864G6JB-6 TR?
W9864G6JB-6 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W9864G6JB-6 TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W9864G6JB-6 TR?
For technical support, including W9864G6JB-6 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W9864G6JB-6 TR requirements.
6.How does Aetrix verify that W9864G6JB-6 TR is sourced from the original manufacturer or authorized distributors?
All W9864G6JB-6 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W9864G6JB-6 TR meets industry standards.
7.What is the process for return or replacement of W9864G6JB-6 TR?
All W9864G6JB-6 TR units undergo pre-shipment inspection (PSI). If there is an issue with W9864G6JB-6 TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W9864G6JB-6 TR part is unused and in its original packaging.
Return procedure for W9864G6JB-6 TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W9864G6JB-6 TR Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
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Microchip Technology
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Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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Microchip Technology
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Microchip Technology
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