Winbond Electronics Corporation W9864G6JH-5

Overview

W9864G6JH-5 from Winbond Electronics is a 1M × 4 banks × 16-bit synchronous DRAM (SDRAM) operating at 200 MHz with CAS Latency 3, supporting burst lengths of 1/2/4/8/full-page and sequential or interleaved addressing modes. It delivers up to 200M words/sec bandwidth and is used as main memory in embedded controllers, industrial HMIs, and legacy networking equipment requiring LVTTL-compatible, TSOP-II-packaged SDRAM.

For engineers reviewing the W9864G6JH-5 datasheet, W9864G6JH-5 pinout, W9864G6JH-5 application, or W9864G6JH-5 equivalent, key selection criteria include its -5 speed grade (200MHz/CL3), 54-pin TSOP-II package, 3.3V ±0.3V supply, self-refresh current ≤2 mA, and support for auto-precharge and burst-stop commands in high-reliability embedded systems.

Technical Context

The W9864G6JH-5 implements a fully synchronous interface synchronized to the rising edge of CLK, with command decoding controlled by CS, RAS, CAS, and WE. Its four independent banks enable interleaved access to hide precharge latency (tRP = 20 ns), while the programmable Mode Register configures burst length, CAS latency, and burst type (sequential/interleave).

It supports LVTTL-level signaling, separate VDDQ/VSSQ for I/O noise immunity, and power management features including Power Down mode (CKE-controlled), Clock Suspend, and Self Refresh (entry via CS/RAS/CAS/CKE low). All banks must be precharged before Mode Register Set, and eight Auto Refresh cycles are required post-initialization.

Key Specifications

Pinout & Package

W9864G6JH-5 uses a 54-pin Thin Small Outline Package (TSOP II), 400 mil body width, with lead-free RoHS-compliant construction. Pin 1 is located at bottom-left corner when notch faces upward; pins are numbered counter-clockwise.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SDRAM applications.

Compared with IS42S16100E-5BLI and MT48LC16M16A2P-6A:G, the W9864G6JH-5 offers optimal balance of speed (200 MHz), industrial-grade reliability at 0–70°C, and proven integration in resource-constrained embedded platforms - making it preferred for cost-sensitive, volume-manufactured equipment where thermal margin is sufficient and pin-level compatibility is critical.

Availability

W9864G6JH-5 is available at Aetrix Electronics and suitable for industrial HMIs, legacy network routers, embedded media players, and medical diagnostic imaging systems requiring stable component supply, long-term lifecycle support, and RoHS-compliant TSOP-II packaging.

Supply support for W9864G6JH-5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and SDRAM products for industrial, automotive, and consumer applications.

The W9864G6JH series belongs to Winbond's legacy SDRAM product line designed specifically for cost-optimized, high-reliability embedded systems requiring LVTTL-compatible, TSOP-packaged memory with robust initialization and power management sequences.

FAQ

What is the maximum operating frequency and CAS latency supported by W9864G6JH-5?

The W9864G6JH-5 is rated for 200 MHz operation with CAS Latency 3 (CL3). This means the device guarantees tAC ≤ 3 × tCK (where tCK = 5 ns) for read data valid timing, and supports burst transfers at this speed when powered at 3.3 V ±0.3 V within 0°C to 70°C ambient temperature. The -5 suffix explicitly denotes this speed grade.

Does W9864G6JH-5 support both sequential and interleaved burst addressing modes?

Yes, W9864G6JH-5 supports both sequential and interleaved burst addressing modes, selectable via the Mode Register. Sequential mode increments column addresses linearly (e.g., n, n+1, n+2…), while interleaved mode toggles address bits according to a predefined pattern - enabling optimized data access patterns for DSP kernels or video processing pipelines.

What power supply requirements must be met for reliable operation of W9864G6JH-5?

W9864G6JH-5 requires two regulated supplies: VDD and VDDQ both at 3.3 V ±0.3 V for the -5 speed grade. VDD powers core logic and input buffers; VDDQ powers I/O drivers. Both must ramp simultaneously during power-up, and VDDQ must not exceed VDD + 0.3 V. Decoupling capacitors (0.1 µF ceramic + 10 µF tantalum per supply pair) are mandatory per datasheet recommendations.

How does the auto-precharge function work in W9864G6JH-5?

In W9864G6JH-5, auto-precharge is activated by setting A10 high during a READ or WRITE command. This causes the SDRAM to automatically initiate precharge of the accessed bank after the burst completes - eliminating the need for a separate PRECHARGE command. For writes, auto-precharge begins two clocks after the final burst write (tWR), followed by tRP before reactivation.

Is W9864G6JH-5 pin-compatible with other 54-pin TSOP-II SDRAMs such as IS42S16100E-5BLI?

Yes, W9864G6JH-5 is pin-compatible with IS42S16100E-5BLI: both use identical 54-pin TSOP II (400 mil) footprints, matching pin assignments for A0–A11, DQ0–DQ15, CS, RAS, CAS, WE, CLK, CKE, LDQM, UDQM, VDD, VDDQ, VSS, and VSSQ. This enables direct PCB-level substitution where timing and temperature requirements align.