Winbond Electronics Corporation W9864G6JT-6

Overview

W9864G6JT-6 from Winbond is a 1M × 4 banks × 16-bit synchronous DRAM (SDRAM) operating at 166 MHz with CAS Latency 3, 3.3V supply, and TFBGA-54 (8×8 mm²) package. It delivers up to 166 million words/second bandwidth and supports burst lengths of 1, 2, 4, 8, or full page for high-throughput memory buffering in embedded controllers and industrial display systems.

For engineers reviewing the W9864G6JT-6 datasheet, W9864G6JT-6 pinout, W9864G6JT-6 application, or W9864G6JT-6 equivalent, key selection criteria include CL3 timing compliance at 166 MHz, self-refresh capability (2 mA max), LVTTL interface compatibility, and TFBGA-54 ball mapping with separated VDDQ/VSSQ for I/O noise immunity.

Technical Context

This SDRAM implements four independent 1M-word banks with interleaved access support to hide precharge latency. Its mode register enables dynamic configuration of burst type (sequential/interleave), length, and CAS latency - critical for optimizing throughput in burst-oriented memory subsystems.

It supports full command set including auto-precharge (A10-controlled), self-refresh (CKE-low entry), power-down mode, and burst-stop - all synchronized to the rising edge of CLK. Refresh is managed via 4K cycles per 64 ms, with CBR auto-refresh and tREF-based timing constraints.

Key Specifications

Pinout & Package

W9864G6JT-6 uses a 54-ball TFBGA package (8 mm × 8 mm) with LVTTL-compatible I/Os, separated VDDQ/VSSQ supplies for I/O noise isolation, and dedicated bank select (BS0/BS1), mask (LDQM/UDQM), and control (CLK, CKE, /CS, /RAS, /CAS, /WE) balls.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SDRAM applications.

Compared with IS42S16100E-6BLI, W9864G6JT-6 offers identical electrical and timing behavior but narrower temperature rating; versus MT48LC16M16A2P-6A, it provides lower density in a smaller TFBGA footprint - favoring space-constrained new designs over legacy replacements.

Availability

W9864G6JT-6 is available at Aetrix Electronics and suitable for industrial HMI display buffer, embedded controller main memory, and network edge router packet buffer applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for W9864G6JT-6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and SDRAM products for industrial, automotive, and consumer markets.

The W9864G6JT series belongs to Winbond's high-reliability SDRAM product line, designed specifically for cost-sensitive yet timing-critical embedded systems where commercial-grade performance and TFBGA miniaturization are prioritized.

FAQ

What is the maximum data bandwidth supported by the W9864G6JT-6?

The W9864G6JT-6 supports a maximum data bandwidth of 166 million words per second. With its 16-bit data bus and 166 MHz clock, this translates to 332 MB/s peak transfer rate under ideal burst conditions. This value is derived directly from the device's specified clock frequency and bus width, and assumes CL3 timing with no wait states or command conflicts.

Does the W9864G6JT-6 support both sequential and interleave burst modes?

Yes, the W9864G6JT-6 supports both sequential and interleave burst addressing modes. These are configured via the mode register during initialization. Sequential mode increments column addresses linearly (e.g., n, n+1, n+2), while interleave mode toggles specific address bits - enabling optimized access patterns for different memory controller architectures. The W9864G6JT-6 datasheet explicitly confirms support for both in Section 2 (Features) and Section 7.12–7.13.

What is the refresh requirement for W9864G6JT-6, and how is it implemented?

The W9864G6JT-6 requires 4,096 refresh cycles every 64 ms (tREF = 64 ms). Refresh is implemented via either external CBR (CAS-before-RAS) commands issued by the memory controller or through self-refresh mode (entered with CKE low and all banks idle). During self-refresh, the device autonomously manages internal refresh timing with ≤2 mA current draw - critical for low-power suspend operation.

Can W9864G6JT-6 operate with a 3.0 V supply, or is 3.3 V mandatory?

The W9864G6JT-6 operates within a recommended DC supply range of 3.0 V to 3.6 V for both VDD and VDDQ, per Section 9.2 of its datasheet. While 3.3 V is the nominal voltage, 3.0 V is a valid minimum - however, timing parameters (e.g., tRC, tRCD) must be verified at that voltage, and some margin-sensitive applications may require derating. The -6 speed grade is characterized at 3.3 V ±0.3 V.

How does the W9864G6JT-6 handle simultaneous read and write operations across different banks?

The W9864G6JT-6 enables true interleaved bank operations: while one bank is active and undergoing a read or write burst, another bank can be precharged or activated independently. This is made possible by its four-bank architecture and bank-select pins (BS0/BS1). Section 7.4 confirms that "interleaved bank Read or Write operations are possible", allowing seamless data access across pages without waiting for tRP or tRAS to expire on the same bank.