Winbond Electronics Corporation W9864G6JT-6I

Overview

W9864G6JT-6I from Winbond is a 1M × 4 banks × 16-bit synchronous DRAM (SDRAM) operating at 166 MHz with CAS Latency 3, 3.3V LVTTL interface, and industrial temperature range (–40°C to +85°C). It delivers up to 166 million words/second bandwidth and supports burst lengths of 1, 2, 4, 8, or full page for high-throughput memory buffering in embedded controllers and industrial HMIs.

For engineers reviewing the W9864G6JT-6I datasheet, W9864G6JT-6I pinout, W9864G6JT-6I application, or W9864G6JT-6I equivalent, key selection criteria include its TFBGA-54 package, self-refresh capability, programmable mode register, auto-precharge support, and industrial-grade thermal reliability.

Technical Context

The W9864G6JT-6I implements a four-bank architecture with independent row activation and interleaved bank access to hide precharge latency. Its command decoder interprets RAS/CAS/WE/CS combinations on CLK rising edges to execute bank activate, read/write, precharge, auto-refresh, self-refresh, and power-down operations.

It uses multiplexed address pins A0–A11 (row/column), BS0/BS1 for bank selection, and LDQM/UDQM for byte-level write masking. The mode register configures burst type (sequential/interleave), length, and CAS latency - all required to be set post-power-up before normal operation.

Key Specifications

Pinout & Package

W9864G6JT-6I is packaged in an 8 mm × 8 mm TFBGA-54 (lead-free, RoHS-compliant) with 0.8 mm ball pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SDRAM applications.

Compared with IS42S16160J-6BLI and MT48LC16M16A2P-6A:G, the W9864G6JT-6I offers native 3.3V-only operation in a compact TFBGA package, eliminating level-shifting complexity while maintaining industrial temperature compliance - ideal for new designs prioritizing board area and supply simplicity.

Availability

W9864G6JT-6I is available at Aetrix Electronics and suitable for industrial HMIs, embedded controllers, network gateways, and medical data acquisition systems requiring stable component supply across extended temperature ranges and multi-year production cycles.

Supply support for W9864G6JT-6I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory, flash, and logic ICs for industrial, automotive, and computing markets.

The W9864G6JT-6I belongs to Winbond's legacy SDR SDRAM product line, designed specifically for cost-sensitive, thermally demanding embedded systems needing reliable, drop-in DDR1-era memory performance without advanced features like DLL or differential clocks.

FAQ

What is the minimum setup time for address and control signals relative to CLK for W9864G6JT-6I?

The W9864G6JT-6I requires address (A0–A11, BS0/BS1) and control (/CS, /RAS, /CAS, /WE) signals to be stable for at least 2.5 ns before the CLK rising edge under 166 MHz operation. This setup time is specified in the AC Characteristics table (tIS) and must be met to ensure reliable command registration - failure risks command misinterpretation or initialization failure. The W9864G6JT-6I does not include internal delay-locked loop (DLL) compensation, so PCB trace matching and careful timing closure are essential.

Does W9864G6JT-6I support both sequential and interleaved burst modes, and how is the mode selected?

Yes, W9864G6JT-6I supports both sequential and interleaved burst addressing, selected exclusively via bit M3 in the mode register during the Mode Register Set command. Sequential mode increments column addresses linearly (e.g., n, n+1, n+2); interleaved mode toggles LSBs in a defined pattern. The W9864G6JT-6I does not auto-detect burst type - the host controller must program M3 correctly before any burst access, and the setting persists until reprogrammed.

Can W9864G6JT-6I operate without external refresh circuitry, and what is the self-refresh current draw?

Yes, W9864G6JT-6I supports self-refresh mode: assert /CS, /RAS, /CAS, and CKE low while holding /WE high on a CLK rising edge, then maintain CKE low. In this state, it autonomously manages refresh with no external commands. The datasheet specifies max 2 mA current during self-refresh at TA = 85°C - significantly lower than active-mode current, enabling extended low-power hold states. The W9864G6JT-6I retains full data integrity throughout self-refresh as long as CKE remains low and VDD/VDDQ are maintained.

What is the function of A10 during a READ command, and how does it affect W9864G6JT-6I behavior?

On W9864G6JT-6I, A10 determines auto-precharge activation during READ and WRITE commands. When A10 = high at command registration, the selected bank automatically begins precharging after burst completion - eliminating need for explicit PRECHARGE command. If A10 = low, the bank remains active for subsequent accesses. This behavior is hardwired in W9864G6JT-6I's command decoder and applies identically across all speed grades and temperature ranges.

Is W9864G6JT-6I pin-compatible with other Winbond SDRAMs such as W9825G6JH-6?

No, W9864G6JT-6I is not pin-compatible with W9825G6JH-6. Although both are Winbond SDR SDRAMs in TFBGA-54 packages, W9825G6JH-6 is a 32 Mbit (2M × 4 × 4) device with different address pin count (A0–A12 vs. A0–A11) and distinct ball mapping - confirmed by comparing their respective ball configuration diagrams. Interchanging them would cause address decoding errors and functional failure. The W9864G6JT-6I must be used only with its validated layout and signal routing.