Winbond Electronics Corporation W9864G6JT-6I TR

Overview

W9864G6JT-6I TR from Winbond Electronics is a 1M × 4 banks × 16-bit synchronous DRAM (SDRAM) operating at 166 MHz with CAS Latency 3, compliant to LVTTL interface standards and supporting burst lengths of 1/2/4/8/full-page. It delivers up to 166 million words per second bandwidth and features self-refresh, power-down, and auto-precharge modes for embedded memory subsystems in industrial control panels and network edge devices.

For engineers reviewing the W9864G6JT-6I TR datasheet, W9864G6JT-6I TR pinout, W9864G6JT-6I TR application, or W9864G6JT-6I TR equivalent, key selection criteria include industrial temperature support (–40°C to +85°C), TFBGA-54 package compatibility, CL3 timing compliance at 166 MHz, and byte-level DQ masking via LDQM/UDQM pins.

Technical Context

This SDRAM implements four independent 1M-word banks with interleaved access capability to hide precharge latency, enabling continuous data streaming across bank boundaries. Its mode register supports programmable burst type (sequential or interleave), burst length, and CAS latency - all configured via the Mode Register Set command with address inputs A0–A11.

Command decoding is fully synchronous to CLK, with CKE gating clock activation for power-down and self-refresh entry/exit. All critical timing parameters - including tRCD (20 ns), tRP (20 ns), tRC (60 ns), and tWR (2 clocks) - are guaranteed across the full industrial temperature range for the -6I speed grade.

Key Specifications

Pinout & Package

W9864G6JT-6I TR is packaged in a RoHS-compliant, lead-free TFBGA-54 (8 mm × 8 mm) with 0.8 mm ball pitch. The package supports high-density PCB layout with dedicated VDDQ/VSSQ rails for I/O noise isolation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SDRAM applications.

Compared with IS42S16100H-6BLI and MT48LC16M16A2P-6A:G, W9864G6JT-6I TR provides tighter tRCD/tRP timing guarantees and full industrial temperature qualification out-of-box - critical for systems where memory timing margin is constrained by controller design or thermal environment.

Availability

W9864G6JT-6I TR is available at Aetrix Electronics and suitable for industrial HMI panels, network edge routers, medical diagnostic terminals, and smart energy meters requiring stable component supply across extended temperature ranges and multi-year production cycles.

Supply support for W9864G6JT-6I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR Flash, PSRAM, and SDRAM products for industrial, automotive, and consumer markets.

The W9864G6JT series belongs to Winbond's industrial-grade SDRAM product line, designed specifically for embedded systems requiring guaranteed performance and reliability across –40°C to +85°C ambient conditions without thermal derating.

FAQ

What is the maximum guaranteed clock frequency for W9864G6JT-6I TR?

The W9864G6JT-6I TR is rated for 166 MHz operation across its full industrial temperature range (–40°C to +85°C). This frequency is validated with CAS Latency 3 and all AC timing parameters - including tRCD (20 ns), tRP (20 ns), and tRC (60 ns) - meeting specification limits under worst-case voltage (3.0 V) and temperature conditions. No derating is required for compliant system designs.

Does W9864G6JT-6I TR support both sequential and interleaved burst modes?

Yes, W9864G6JT-6I TR supports both sequential and interleaved burst addressing modes, configurable via the Mode Register Set command. Sequential mode increments column addresses linearly (e.g., n, n+1, n+2…), while interleaved mode toggles address bits according to JEDEC-standard patterns. Both modes are supported for burst lengths of 1, 2, 4, 8, and full-page, enabling optimization for different access patterns in the target application.

How does the auto-precharge function operate in W9864G6JT-6I TR?

In W9864G6JT-6I TR, auto-precharge is triggered when A10 is driven high during a READ or WRITE command. For reads, precharge begins before burst completion (delay determined by CAS Latency); for writes, it starts two clocks after the final burst write cycle (tWR). Once initiated, the bank cannot be reactivated until tRP elapses. Auto-precharge is prohibited for full-page bursts and cannot be interrupted by other commands.

What is the purpose of LDQM and UDQM pins on W9864G6JT-6I TR?

LDQM (Lower Data Queue Mask) and UDQM (Upper Data Queue Mask) provide byte-level control over the 16-bit DQ bus on W9864G6JT-6I TR. During reads, asserting either signal places the corresponding DQ byte (DQ0–7 for LDQM, DQ8–15 for UDQM) in high-impedance state after 2-cycle latency. During writes, asserting either signal blocks data transfer to that byte lane with zero latency - enabling precise partial-word updates without read-modify-write sequences.

Can W9864G6JT-6I TR be used in systems requiring self-refresh during deep-sleep states?

Yes, W9864G6JT-6I TR supports self-refresh mode, entered via the SELF REFRESH command (CS/RAS/CAS/WE low, CKE low on CLK rising edge). In this mode, the device autonomously executes refresh cycles using an internal oscillator, maintaining data integrity with ≤2 mA current draw. Exit requires CKE high followed by tXSR delay before issuing new commands - making it suitable for battery-backed or low-power embedded systems needing memory retention during host processor sleep.