Winbond Electronics Corporation W9864G6KH-5

Overview

W9864G6KH-5 from Winbond is a 1M × 4 banks × 16-bit synchronous DRAM (SDRAM) operating at 200 MHz with CAS Latency 3, 3.3V ±0.3V supply, and TSOP II-54 package. It delivers up to 200M words/second bandwidth and supports burst lengths of 1, 2, 4, 8, or full page for high-throughput memory buffering in embedded controllers and industrial display systems.

For engineers reviewing the W9864G6KH-5 datasheet, W9864G6KH-5 pinout, W9864G6KH-5 application, or W9864G6KH-5 equivalent, key selection criteria include tRCD = 20 ns, tRP = 20 ns, self-refresh current ≤2 mA, LVTTL interface compatibility, and support for interleaved bank access to hide precharge latency.

Technical Context

This SDRAM implements a fully synchronous architecture with programmable Mode Register control over burst length (1–8, full page), burst type (sequential or interleave), and CAS latency (2 or 3). Its four internal banks enable true interleaving-allowing one bank to be accessed while another precharges-reducing effective access latency in burst-intensive workloads.

It supports auto-precharge (triggered by A10 high during read/write), self-refresh mode (CKE low, all banks idle), and power-down mode (CKE low, no refresh). All commands are latched on the rising edge of CLK, and timing compliance requires strict adherence to tRCD ≥20 ns, tRP ≥20 ns, and tRC ≥60 ns for the -5 speed grade.

Key Specifications

Pinout & Package

W9864G6KH-5 is housed in a RoHS-compliant, lead-free TSOP II-54 package (400 mil width), with separate VDDQ/VSSQ supplies for I/O noise immunity and dedicated LDQM/UDQM pins for byte-level write masking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SDRAM applications.

Compared with IS42S16100E-6BLI and MT48LC16M16A2P-6A:G, W9864G6KH-5 provides the highest clock rate (200 MHz) and tightest tRC (30 ns), making it optimal for bandwidth-constrained real-time display or packet-processing systems where timing margin is critical.

Availability

W9864G6KH-5 is available at Aetrix Electronics and suitable for industrial HMI display buffers, network packet buffers, and embedded media decoder caches requiring stable component supply, long-lifecycle support, and RoHS-compliant TSOP packaging.

Supply support for W9864G6KH-5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in memory ICs, flash memory, and logic devices, with over 30 years of DRAM design heritage.

The W9864G6KH series belongs to Winbond's high-reliability SDR SDRAM product line, engineered for cost-sensitive industrial and embedded applications requiring proven timing stability, wide temperature tolerance, and long-term manufacturability.

FAQ

What is the maximum operating frequency and CAS latency of W9864G6KH-5?

W9864G6KH-5 is rated for 200 MHz operation with CAS Latency 3 (CL3). This means the device requires exactly three clock cycles between issuing a column read command and the appearance of the first valid data on DQ pins. The -5 speed grade guarantees this timing across the full 0°C to 70°C operating range with 3.3V ±0.3V supply.

Does W9864G6KH-5 support both sequential and interleaved burst addressing modes?

Yes, W9864G6KH-5 supports both sequential and interleaved burst addressing, configured via the Mode Register. Sequential mode increments column addresses linearly (e.g., n, n+1, n+2); interleaved mode toggles address bits (e.g., A0, then A0 inverted) to optimize cache-line access patterns. This flexibility allows tuning for specific data access locality in video or networking applications.

What are the power supply requirements for W9864G6KH-5?

W9864G6KH-5 requires a 3.3V ±0.3V supply (VDD and VDDQ) for the -5 speed grade. VDD powers core logic and input buffers; VDDQ separately powers I/O drivers to minimize switching noise on the DQ bus. Both supplies must ramp simultaneously during power-up, and VDDQ must not exceed VDD +0.3V at any time.

How does the auto-precharge function work on W9864G6KH-5?

Auto-precharge is activated by setting A10 high during a READ or WRITE command. For W9864G6KH-5, this triggers automatic precharge of the accessed bank immediately after the final burst transfer-two clocks after last write data (tWR) and followed by tRP. This eliminates the need for explicit PRECHARGE commands, reducing controller overhead and improving efficiency in burst-intensive workloads.

Is W9864G6KH-5 pin-compatible with other Winbond SDRAMs like W9825G6JH?

W9864G6KH-5 shares the same TSOP II-54 pinout, signal naming, and command set as earlier Winbond SDR SDRAMs including W9825G6JH, enabling direct PCB-level replacement in many legacy designs. However, timing parameters (e.g., tRCD, tRP) differ slightly; firmware initialization sequences must be verified against the W9864G6KH-5 datasheet to ensure reliable operation at 200 MHz.