Winbond Electronics Corporation W9864G6KH-5 TR

Overview

W9864G6KH-5 TR from Winbond is a 1M × 4 banks × 16-bit synchronous DRAM (SDRAM) operating at 200 MHz with CAS Latency 3, 3.3V ±0.3V supply, and TSOP II-54 package. It delivers up to 200M words/second bandwidth and supports burst lengths of 1, 2, 4, 8, or full page for high-throughput memory buffering in embedded controllers and industrial display systems.

For engineers reviewing the W9864G6KH-5 TR datasheet, W9864G6KH-5 TR pinout, W9864G6KH-5 TR application, or W9864G6KH-5 TR equivalent, key selection criteria include tRCD = 20 ns, tRP = 20 ns, tRC = 60 ns, self-refresh current ≤2 mA, and LVTTL-compatible interface timing compliance at 200 MHz.

Technical Context

This SDRAM implements four independent 1M-word banks with interleaved access capability to hide precharge latency. Its command decoder interprets RAS/CAS/WE/CS combinations on CLK rising edges to execute bank activate, read/write, auto-precharge, self-refresh, and power-down operations.

Internal mode register programming defines burst type (sequential or interleave), burst length, and CAS latency. Address multiplexing (A0–A11) enables row/column sharing, while LDQM/UDQM provide per-byte write masking and output tri-state control during read bursts.

Key Specifications

Pinout & Package

TSOP II-54 package (400 mil width), RoHS-compliant, lead-free. Pin 1 marked via corner cut; pins 36 and 40 are NC (no connection).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SDRAM applications.

Compared with IS42S16100E-6BLI and MT48LC16M16A2P-6A:G, the W9864G6KH-5 TR provides 200 MHz operation essential for bandwidth-constrained video pipelines, while maintaining pin compatibility with industry-standard 54-pin TSOP II layouts and identical 16-bit data width.

Availability

W9864G6KH-5 TR is available at Aetrix Electronics and suitable for industrial HMI displays, network packet buffering, and medical imaging data acquisition requiring stable component supply across multi-year production cycles.

Supply support for W9864G6KH-5 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory and microcontroller solutions since 1987.

The W9864G6KH belongs to Winbond's standard SDRAM product line, designed for cost-sensitive, high-reliability embedded systems requiring proven 3.3 V synchronous DRAM performance without advanced features like DLL or differential clocks.

FAQ

What is the maximum operating frequency supported by the W9864G6KH-5 TR?

The W9864G6KH-5 TR is rated for 200 MHz operation with CAS Latency 3. This speed grade is confirmed in the official Winbond datasheet revision A03, where tAC = 2.5 ns and tCK = 5 ns define the minimum clock period. Operation above 200 MHz violates AC timing specifications and may result in read data invalidation or command misinterpretation. The W9864G6KH-5 TR must be used with a memory controller capable of meeting tRCD = 20 ns, tRP = 20 ns, and tRC = 60 ns at this frequency.

Does the W9864G6KH-5 TR support both sequential and interleaved burst modes?

Yes, the W9864G6KH-5 TR supports both sequential and interleaved burst addressing modes, programmable via the mode register. Sequential mode increments column addresses linearly (e.g., n, n+1, n+2), while interleaved mode toggles LSBs for cache-line-aligned access. The W9864G6KH-5 TR uses the same burst length settings (1, 2, 4, 8, full page) for both modes. Selection is determined by bit M3 in the mode register, and the behavior is fully documented in Section 7.12 and 7.13 of the W9864G6KH-5 TR datasheet.

What is the purpose of the LDQM and UDQM pins on the W9864G6KH-5 TR?

The LDQM (Lower Data Mask) and UDQM (Upper Data Mask) pins on the W9864G6KH-5 TR provide byte-level write masking and output tri-state control. During write cycles, asserting LDQM or UDQM high blocks data transfer to the corresponding DQ0–DQ7 or DQ8–DQ15 byte lanes with zero latency. During read cycles, asserting either DQM high places the respective byte outputs in high-impedance state after two clock cycles. This functionality allows the W9864G6KH-5 TR to support partial-word writes and avoid bus contention in multi-master systems.

Can the W9864G6KH-5 TR operate in self-refresh mode, and what is its current draw?

Yes, the W9864G6KH-5 TR supports self-refresh mode entered via the dedicated self-refresh command (CS=RAS=CAS=WE=low, CKE=low). In this mode, the device maintains data integrity without external refresh commands using an internal timer. The datasheet specifies a maximum self-refresh current of 2 mA at 25°C for the W9864G6KH-5 TR. This value is measured under VDD = 3.3 V and ensures reliable retention over the full commercial temperature range (0°C to 70°C).

What package type and pin count does the W9864G6KH-5 TR use?

The W9864G6KH-5 TR uses a 54-pin TSOP II (Thin Small Outline Package) with 400 mil body width, as specified in Section 12 of the Winbond datasheet. It is lead-free and RoHS compliant. Pin 1 is identified by a corner cut on the package. Pins 36 and 40 are no-connect (NC) terminals. The W9864G6KH-5 TR shares mechanical and solder-reflow profiles with industry-standard 54-pin SDRAM packages, enabling drop-in replacement in existing TSOP II footprints.