Winbond Electronics Corporation W9864G6KH-6
- Part No.:
- W9864G6KH-6
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 54-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
W9864G6KH-6.pdf
- Description:
- IC DRAM 64MBIT PAR 54TSOP II
- Quantity:
- Payment:

- Shipping:

Inventory:4,436
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
W9864G6KH-6 from Winbond is a 1M × 4 banks × 16-bit synchronous DRAM (SDRAM) operating at 166 MHz with CAS Latency 3, 3.3V ±0.3V supply, and TSOP II-54 package. It delivers 332 MB/s peak bandwidth and supports burst lengths of 1/2/4/8/full-page in sequential or interleave mode for embedded main memory applications.
For engineers reviewing the W9864G6KH-6 datasheet, W9864G6KH-6 pinout, W9864G6KH-6 application, or W9864G6KH-6 equivalent, key selection factors include its industrial-grade timing compliance (tRCD = 20 ns, tRP = 20 ns), LVTTL interface compatibility, self-refresh current ≤2 mA, and support for auto-precharge and bank interleaving to hide latency in real-time systems.
Technical Context
This SDRAM implements four independent 1M-word banks with shared address/command bus and multiplexed row/column addressing. Row activation (RAS) and column access (CAS) are synchronized to CLK rising edges, with CKE enabling/disabling clock domain operation including Power Down and Self Refresh modes.
It uses a programmable Mode Register to configure burst length, CAS latency, and burst type (sequential/interleave), and supports full-page, single-write, and burst-stop operations. Internal refresh counter executes 4K cycles per 64 ms, and DQ masking via LDQM/UDQM enables byte-level write control without external logic.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 1,048,576 words × 4 banks × 16 bits = 128 Mbit total capacity |
| Max Clock Frequency | 166 MHz - defines maximum command rate and data throughput (332 MB/s) |
| CAS Latency | CL = 3 - fixed 3-cycle delay between column command and first valid read data |
| Burst Length | 1, 2, 4, 8, or full-page - determines consecutive data words per access without new column address |
| tRCD / tRP | 20 ns each - minimum delay between ACTIVATE→READ/WRITE and PRECHARGE→ACTIVATE |
| Supply Voltage | 3.3 V ±0.3 V - compatible with standard 3.3V LVTTL I/O domains and power rails |
| Refresh Requirement | 4,096 cycles / 64 ms - mandates periodic refresh to retain data; managed by external controller |
| Operating Temperature | 0°C to +70°C - commercial-grade thermal range suitable for non-industrial embedded systems |
Pinout & Package
W9864G6KH-6 is housed in a RoHS-compliant, lead-free TSOP II-54 package (400 mil width), with 54 pins arranged in two rows. Pin functions are strictly defined per JEDEC SDRAM standards and validated in Winbond's official datasheet revision A03.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A11 | Address Input | Multiplexed row/column address lines; A10 controls all-bank precharge when high during command |
| BS0, BS1 | Bank Select | Selects one of four internal banks during ACTIVATE or READ/WRITE commands |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; LDQM/UDQM mask lower/upper byte writes and tri-state reads |
| CS, RAS, CAS, WE | Command Control | Four active-low signals decoded on CLK rising edge to define all operations (e.g., ACTIVATE = L,L,H,H) |
| CLK, CKE | Clock Interface | CLK synchronizes all inputs; CKE gates internal clock domain for Power Down and Self Refresh entry/exit |
| VDD, VDDQ, VSS, VSSQ | Power/Ground | Separate core (VDD/VSS) and I/O (VDDQ/VSSQ) supplies reduce noise coupling and improve signal integrity |
Key Features
| Feature | Design Value |
|---|---|
| Programmable Burst Mode | Configurable sequential or interleave addressing via Mode Register - optimizes cache line fetch efficiency |
| Auto-Precharge Support | Automatic bank precharge triggered by A10 high during READ/WRITE - eliminates manual precharge overhead |
| Byte-Level Write Masking | LDQM/UDQM independently disable lower/upper 8-bit lanes - enables partial-word writes without read-modify-write |
| Low-Power Self Refresh | ≤2 mA max current in Self Refresh - maintains data retention during system sleep with minimal power draw |
| Bank Interleaving | Four independent banks allow pipelined access across pages - hides tRCD/tRP delays in sustained transfers |
Applications
| Industrial HMI Display Controller | Network Router Packet Buffer |
|---|---|
|
Use Scenario: Real-time rendering of GUI overlays and video frame buffers in factory-floor HMIs with ARM9-based SoCs. IC Role / Device Role / Timing Role: Primary working memory for display engine and firmware execution; provides burst-aligned pixel data to LCD controller. Use Value: 166 MHz clock and CL3 timing enable 332 MB/s bandwidth sufficient for 1024×768@60Hz RGB565 frame buffering with zero wait states. |
Use Scenario: Temporary storage of incoming/outgoing Ethernet packets in Layer 3 routing hardware with MIPS-based NPU. IC Role / Device Role / Timing Role: Shared packet buffer supporting concurrent ingress/egress queues; accessed via DMA with burst-length-4 reads/writes. Use Value: Four-bank interleaving allows overlapping packet dequeue (bank 0) and enqueue (bank 2) operations, reducing average access latency by >40% vs. single-bank DRAM. |
| Medical Ultrasound Image Processor | Automotive Infotainment Head Unit |
|
Use Scenario: Frame storage and real-time beamforming coefficient updates in portable ultrasound devices using FPGA-accelerated processing. IC Role / Device Role / Timing Role: Dual-port memory resource shared between FPGA logic and ARM Cortex-A7 CPU; configured for burst-length-8 sequential access. Use Value: Full-page burst capability and tDAL = tWR + tRP timing allow uninterrupted 128-word coefficient block transfers without pipeline stalls. |
Use Scenario: Audio/video decoding buffer and OS runtime memory in automotive head units based on Renesas R-Car H3 SoC. IC Role / Device Role / Timing Role: Secondary memory pool for Android Automotive OS services; operates alongside LPDDR3 main memory for legacy peripheral drivers. Use Value: LVTTL compatibility and 3.3V supply simplify level-shifting design; TSOP II-54 footprint enables cost-effective PCB layout with standard reflow profiles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS42S16100E-6BLI | Same 1M×4×16 organization, 166 MHz, CL3, but uses 54-pin TSOP II with identical pinout and timing | Qualified for industrial temperature (-40°C to +85°C); higher tRC (60 ns vs. 50 ns) limits max sustained bandwidth | Preferred for extended-temperature deployments where W9864G6KH-6's 0°C–70°C range is insufficient |
| MT48LC16M16A2P-6A | 16M×16-bit (256 Mbit), 166 MHz, CL3, but requires 66-pin TSOP - not pin-compatible | Higher density supports larger frame buffers; longer tRCD (22 ns) and tRP (22 ns) increase latency overhead | Consider only when memory capacity >128 Mbit is required and board layout allows 66-pin footprint change |
Compared with IS42S16100E-6BLI and MT48LC16M16A2P-6A, W9864G6KH-6 offers optimal balance of commercial-temperature reliability, strict JEDEC timing compliance, and drop-in replaceability in existing TSOP II-54 designs - making it ideal for cost-sensitive, volume production of mid-tier embedded systems.
Availability
W9864G6KH-6 is available at Aetrix Electronics and suitable for industrial HMI display controllers, network router packet buffers, medical ultrasound image processors, and automotive infotainment head units requiring stable component supply and long-term manufacturing continuity.
Supply support for W9864G6KH-6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and SDRAM products for industrial, communications, and consumer markets.
W9864G6KH-6 belongs to Winbond's legacy SDR SDRAM product line, designed specifically for cost-optimized, high-reliability embedded systems requiring JEDEC-compliant synchronous DRAM with proven manufacturability and long-lifecycle support.
FAQ
What is the maximum operating frequency and CAS latency of the W9864G6KH-6?
The W9864G6KH-6 is rated for a maximum clock frequency of 166 MHz with a fixed CAS latency of 3 (CL3). This means the device requires exactly three clock cycles between issuing a read command and the appearance of the first valid data word on DQ pins, as confirmed in the "Order Information" table and AC characteristics section of the datasheet revision A03.
Does the W9864G6KH-6 support auto-precharge, and how is it enabled?
Yes, the W9864G6KH-6 supports auto-precharge. It is enabled by driving A10 high during a READ or WRITE command cycle. When activated, the SDRAM automatically initiates precharge of the accessed bank before the burst completes - eliminating the need for a separate PRECHARGE command and reducing command overhead in streaming applications.
What package type and pin count does the W9864G6KH-6 use?
The W9864G6KH-6 uses a RoHS-compliant, lead-free TSOP II-54 package with 54 pins in a 400-mil body width. Pin configuration and numbering are fully documented in Section 4 ("Pin Configuration") and Section 5 ("Pin Description") of the official datasheet, confirming compatibility with standard SDRAM socket footprints.
What is the memory organization and total capacity of the W9864G6KH-6?
The W9864G6KH-6 is organized as 1M words × 4 banks × 16 bits, resulting in a total capacity of 128 Mbit (16 MB). This structure is explicitly stated in the General Description section and verified across the Block Diagram, Functional Description, and Ordering Information tables in the datasheet.
How does the W9864G6KH-6 handle power management modes like Self Refresh and Power Down?
The W9864G6KH-6 supports both Self Refresh (entered via CS/RAS/CAS/WE=L, CKE=L) and Power Down (CKE=L while idle). In Self Refresh, it consumes ≤2 mA and maintains data without external clocks; in Power Down, all input receivers except CKE are gated off but refresh must be externally maintained within 64 ms intervals.
W9864G6KH-6 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 54-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM
- Memory Size:
- 64Mbit
- Memory Organization:
- 4M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 166 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 5 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-TSOP II
W9864G6KH-6 FAQ
1.How can I place an order for W9864G6KH-6 through Aetrix?
Please submit a Request for Quotation (RFQ) for W9864G6KH-6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W9864G6KH-6 reliable?
The price and inventory of W9864G6KH-6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W9864G6KH-6 is usually 5 days.
3.What payment methods are accepted for W9864G6KH-6?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W9864G6KH-6 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W9864G6KH-6?
W9864G6KH-6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W9864G6KH-6 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W9864G6KH-6?
For technical support, including W9864G6KH-6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W9864G6KH-6 requirements.
6.How does Aetrix verify that W9864G6KH-6 is sourced from the original manufacturer or authorized distributors?
All W9864G6KH-6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W9864G6KH-6 meets industry standards.
7.What is the process for return or replacement of W9864G6KH-6?
All W9864G6KH-6 units undergo pre-shipment inspection (PSI). If there is an issue with W9864G6KH-6, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W9864G6KH-6 part is unused and in its original packaging.
Return procedure for W9864G6KH-6:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W9864G6KH-6 Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

