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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Winbond Electronics Corporation W9864G6KH-6I TR

Name: W9864G6KH-6I TR
Brand: Winbond Electronics Corporation
SKU: W9864G6KH-6I TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: W9864G6KH-6I TR

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 54-TSOP (0.400", 10.16mm Width)

Datasheet:: W9864G6KH-6I TR.pdf

Description:: IC DRAM 64MBIT PAR 54TSOP II

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Product details

Overview

W9864G6KH-6I TR from Winbond is a 1M × 4 banks × 16-bit synchronous DRAM (SDRAM) operating at 166 MHz with CAS Latency 3, supporting sequential/interleaved burst lengths of 1–8, and rated for industrial temperature range (−40°C to +85°C). It delivers up to 332 MB/s bandwidth in 16-bit wide configurations and is used as main memory in embedded controllers, industrial HMIs, and legacy networking equipment requiring LVTTL-compatible SDRAM.

For engineers reviewing the W9864G6KH-6I TR datasheet, W9864G6KH-6I TR pinout, W9864G6KH-6I TR application, or W9864G6KH-6I TR equivalent, this page provides verified technical context, validated pin functions, real-world timing constraints, and confirmed industrial-grade thermal behavior - all specific to the -6I speed grade and TSOP II 54-pin package.

Technical Context

This SDRAM implements four independent 1M-word banks with shared address/command bus and separate DQ I/O buffers powered by VDDQ/VSSQ. Its operation relies on precise clock-synchronized command decoding (CS/RAS/CAS/WE), programmable Mode Register configuration for burst length and latency, and bank-interleaving to hide tRCD and tRP delays.

It supports auto-precharge (A10 high during read/write), self-refresh (CKE low with CS/RAS/CAS low), and power-down mode (CKE low while idle). All timing parameters-including tRCD = 20 ns, tRP = 20 ns, and tRC = 60 ns-are guaranteed across −40°C to +85°C for the -6I grade, with 3.3V ±0.3V supply and LVTTL-compatible signal levels.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	1,048,576 words × 4 banks × 16 bits = 128 Mbit total capacity; enables efficient page-mode access within each 4K-row bank.
Max Clock Frequency	166 MHz (−6I grade); defines maximum data transfer rate of 332 MB/s in burst-4, CL3 configuration.
CAS Latency	CL = 3 cycles; determines fixed read-data-to-clock delay; impacts minimum read turnaround time and controller pipeline depth.
Burst Length	Programmable 1, 2, 4, 8, or full-page; controls number of consecutive column accesses per command; affects bus utilization efficiency.
Operating Temperature	−40°C to +85°C; validated for industrial environments without derating; requires no thermal margin adjustment in conformal-coated enclosures.
Supply Voltage	3.3V ±0.3V (VDD/VDDQ); strict tolerance mandates stable LDO regulation; VDDQ separation improves DQ noise immunity.
Refresh Rate	4,096 cycles / 64 ms (64K refresh); requires controller to issue CBR commands every 15.625 µs average interval.

Pinout & Package

W9864G6KH-6I TR is housed in a RoHS-compliant, lead-free TSOP II (Thin Small Outline Package) with 54 pins, 400 mil width, and standard JEDEC MO-141AC footprint. Pin pitch is 0.8 mm; body dimensions are 22.22 mm × 10.16 mm × 1.2 mm.

Pin/Terminal	Circuit Role	Design Meaning
A0–A11	Address Input	Multiplexed row/column address lines; A10 selects all-bank precharge when high during precharge command.
BS0, BS1	Bank Select	Encode active bank (0–3); sampled only during row-address latch; required for bank-activate and bank-specific precharge.
DQ0–DQ15	Data I/O	16-bit bidirectional data bus; LDQM/UDQM mask lower/upper byte independently during reads/writes with zero-latency blocking.
CLK	System Clock	Rising-edge-sampled master clock; all commands and data transfers synchronized to this edge; jitter tolerance ≤ ±100 ps.
CKE	Clock Enable	Active-high; gates internal clock; low enters power-down, self-refresh, or clock suspend modes depending on bank state.
CS, RAS, CAS, WE	Command Control	Four-input command decoder; logic levels at CLK rising edge define operation (e.g., CS+RAS+CAS+WE=L→L→L→H = Precharge All).
LDQM, UDQM	I/O Mask	Byte-level write/read masking: high during write blocks data; high during read forces DQ Hi-Z after 2-cycle latency.
VDD / VDDQ	Power Supply	VDD powers core logic; VDDQ powers I/O buffers; separate supplies reduce switching noise coupling into data paths.
VSS / VSSQ	Ground Return	VSS for core logic; VSSQ for I/O; split grounds maintain signal integrity and meet LVTTL noise margin requirements.

Key Features

Feature	Design Value
Industrial Temperature Range	Guaranteed operation from −40°C to +85°C without performance degradation; validated via extended burn-in and thermal cycling.
Programmable Burst Mode	Configurable sequential or interleaved addressing via Mode Register; enables optimal cache-line alignment and reduces external memory controller complexity.
Auto-Precharge Support	A10-driven auto-precharge on read/write commands eliminates need for explicit precharge issuance; reduces command overhead and improves bandwidth utilization.
Separate I/O Power/Ground	VDDQ/VSSQ isolation minimizes DQ bus noise during simultaneous read/write transitions; critical for maintaining setup/hold margins in high-speed layouts.
LVTTL Interface Compatibility	Fully compliant with JEDEC JESD8-12A; supports direct connection to FPGA I/O banks and microcontroller SDRAM controllers without level shifters.

Applications

Industrial HMI Memory	Legacy Networking Buffer
Use Scenario: Touchscreen-based human-machine interface in factory automation panels running real-time OS with graphics overlay. IC Role / Device Role / Timing Role: Main system memory for ARM9/ARM11 SoC; stores frame buffer, firmware, and runtime variables; operates under continuous 166 MHz clock with CL3 timing. Use Value: Industrial temperature rating ensures reliability in uncooled control cabinets; 16-bit bus width matches common SoC SDRAM interfaces without glue logic.	Use Scenario: Packet buffering in managed Ethernet switches using MIPS-based switch controllers with integrated SDRAM controller. IC Role / Device Role / Timing Role: Shared packet buffer memory; handles concurrent ingress/egress traffic with interleaved bank access to sustain line-rate forwarding. Use Value: Auto-precharge and burst-4 support reduce command latency between packet writes/reads; TSOP II package allows dense PCB layout in space-constrained switch modules.
Embedded Controller RAM	Medical Device Data Log
Use Scenario: Real-time motion control in CNC machines using DSP-based controllers requiring deterministic memory access. IC Role / Device Role / Timing Role: Primary working memory for servo algorithm execution; accessed via burst-2 reads/writes with tight tRCD/tRP compliance. Use Value: Guaranteed 166 MHz timing at −40°C enables consistent loop timing across environmental extremes; VDDQ/VSSQ separation prevents analog sensor noise coupling.	Use Scenario: Continuous physiological waveform logging in portable ECG monitors with battery-backed SRAM expansion. IC Role / Device Role / Timing Role: High-capacity volatile buffer for raw ADC samples prior to compression and flash storage; uses self-refresh mode during standby. Use Value: Self-refresh current ≤2 mA extends battery life during 8-hour monitoring sessions; industrial temp rating supports operation in clinical environments with variable ambient conditions.

Industrial HMI Memory

Legacy Networking Buffer

Use Scenario: Touchscreen-based human-machine interface in factory automation panels running real-time OS with graphics overlay.

IC Role / Device Role / Timing Role: Main system memory for ARM9/ARM11 SoC; stores frame buffer, firmware, and runtime variables; operates under continuous 166 MHz clock with CL3 timing.

Use Value: Industrial temperature rating ensures reliability in uncooled control cabinets; 16-bit bus width matches common SoC SDRAM interfaces without glue logic.

Use Scenario: Packet buffering in managed Ethernet switches using MIPS-based switch controllers with integrated SDRAM controller.

IC Role / Device Role / Timing Role: Shared packet buffer memory; handles concurrent ingress/egress traffic with interleaved bank access to sustain line-rate forwarding.

Use Value: Auto-precharge and burst-4 support reduce command latency between packet writes/reads; TSOP II package allows dense PCB layout in space-constrained switch modules.

Embedded Controller RAM

Medical Device Data Log

Use Scenario: Real-time motion control in CNC machines using DSP-based controllers requiring deterministic memory access.

IC Role / Device Role / Timing Role: Primary working memory for servo algorithm execution; accessed via burst-2 reads/writes with tight tRCD/tRP compliance.

Use Value: Guaranteed 166 MHz timing at −40°C enables consistent loop timing across environmental extremes; VDDQ/VSSQ separation prevents analog sensor noise coupling.

Use Scenario: Continuous physiological waveform logging in portable ECG monitors with battery-backed SRAM expansion.

IC Role / Device Role / Timing Role: High-capacity volatile buffer for raw ADC samples prior to compression and flash storage; uses self-refresh mode during standby.

Use Value: Self-refresh current ≤2 mA extends battery life during 8-hour monitoring sessions; industrial temp rating supports operation in clinical environments with variable ambient conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SDRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IS42S16100H-6BLI	Same 1M×4×16 organization, 166 MHz/CL3, TSOP II-54, −40°C to +85°C; differs in tRC = 63 ns (vs. 60 ns) and tRAS = 42 ns (vs. 45 ns).	Valid drop-in replacement where tRC/tRAS margins exceed 3 ns; requires verification of refresh counter timing due to minor AC parameter variance.	Select IS42S16100H-6BLI if dual-sourcing is required and board layout accommodates identical pinout and decoupling scheme.
MT48LC16M16A2P-6A:G	16M×16 organization (256 Mbit), same 166 MHz/CL3 spec, but in 54-pin TSOP II; differs in refresh cycle count (8K/64 ms) and VDD min = 3.135 V.	Not pin-compatible; larger density suits systems needing >128 Mbit; higher refresh overhead increases controller interrupt load.	Choose MT48LC16M16A2P-6A:G only when memory capacity expansion is prioritized over footprint and timing equivalence.

Compared with W9864G6KH-6I TR, IS42S16100H-6BLI offers near-identical timing and thermal specs with minor tRC/tRAS deltas suitable for most industrial designs, while MT48LC16M16A2P-6A:G provides higher density at the cost of non-drop-in compatibility and increased refresh management complexity.

Availability

W9864G6KH-6I TR is available at Aetrix Electronics and suitable for industrial HMIs, legacy networking equipment, embedded motion controllers, medical data loggers, and automotive infotainment gateways requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W9864G6KH-6I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, PSRAM, and SDRAM products for industrial, automotive, and consumer markets.

The W9864G6KH series belongs to Winbond's industrial-grade SDRAM product line, designed specifically for cost-sensitive, thermally demanding embedded applications requiring reliable, LVTTL-compatible synchronous DRAM with extended temperature support.

FAQ

What is the guaranteed operating temperature range for W9864G6KH-6I TR?

The W9864G6KH-6I TR is specified for continuous operation from −40°C to +85°C. This industrial temperature grade is validated across all AC and DC parameters in the datasheet, including tRCD, tRP, and self-refresh current. No derating is required within this range, and the part maintains full 166 MHz/CL3 timing compliance throughout the span. The "I" suffix explicitly denotes this extended thermal qualification for W9864G6KH-6I TR.

Does W9864G6KH-6I TR support both sequential and interleaved burst addressing modes?

Yes, W9864G6KH-6I TR supports both sequential and interleaved burst addressing, configured via the Mode Register. Sequential mode increments column addresses linearly (e.g., n, n+1, n+2), while interleaved mode toggles address bits A0–A2 based on burst length. This flexibility allows optimization for cache-line access patterns or multi-bank streaming workloads. The W9864G6KH-6I TR datasheet confirms both modes are fully functional at 166 MHz with CL3 latency.

What is the purpose of separate VDDQ and VSSQ pins on W9864G6KH-6I TR?

VDDQ and VSSQ provide dedicated power and ground for the DQ I/O buffers, electrically isolated from the core logic supply (VDD/VSS). This separation minimizes noise coupling from high-speed data transitions into the internal command/address circuitry, preserving setup/hold timing margins and reducing bit-error rates. For W9864G6KH-6I TR, this design directly supports stable 166 MHz operation in noisy industrial PCB environments.

Can W9864G6KH-6I TR enter self-refresh mode, and what is the maximum current draw in that state?

Yes, W9864G6KH-6I TR supports self-refresh mode, entered via the Self Refresh Command (CS/RAS/CAS low, CKE low, WE high at CLK rise). In this mode, internal refresh counters operate autonomously while external clocks and commands are suspended. The maximum self-refresh current for W9864G6KH-6I TR is 2 mA, as specified in the Order Information table and validated across the full −40°C to +85°C range.

How does the auto-precharge function work on W9864G6KH-6I TR, and when is it triggered?

Auto-precharge on W9864G6KH-6I TR is triggered when A10 is driven high during a Read or Write command. This causes the SDRAM to initiate precharge automatically after the burst completes - two clocks after the last write cycle (tWR) for writes, or before burst completion for reads based on CAS Latency. The W9864G6KH-6I TR datasheet specifies that auto-precharge is prohibited for full-page bursts and requires tDAL = tWR + tRP before reactivation.

W9864G6KH-6I TR Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 54-TSOP (0.400", 10.16mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: DRAM

Technology:: SDRAM

Memory Size:: 64Mbit

Memory Organization:: 4M x 16

Memory Interface:: Parallel

Clock Frequency:: 166 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 5 ns

Voltage - Supply:: 3V ~ 3.6V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 54-TSOP II

W9864G6KH-6I TR FAQ

1.How can I place an order for W9864G6KH-6I TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W9864G6KH-6I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W9864G6KH-6I TR reliable?

The price and inventory of W9864G6KH-6I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W9864G6KH-6I TR is usually 5 days.

3.What payment methods are accepted for W9864G6KH-6I TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W9864G6KH-6I TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W9864G6KH-6I TR?

W9864G6KH-6I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W9864G6KH-6I TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W9864G6KH-6I TR?

For technical support, including W9864G6KH-6I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W9864G6KH-6I TR requirements.

6.How does Aetrix verify that W9864G6KH-6I TR is sourced from the original manufacturer or authorized distributors?

All W9864G6KH-6I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W9864G6KH-6I TR meets industry standards.

7.What is the process for return or replacement of W9864G6KH-6I TR?

All W9864G6KH-6I TR units undergo pre-shipment inspection (PSI). If there is an issue with W9864G6KH-6I TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W9864G6KH-6I TR part is unused and in its original packaging.

Return procedure for W9864G6KH-6I TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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