Winbond Electronics Corporation W987D2HBJX6I

Overview

W987D2HBJX6I from Winbond is a 128Mb mobile low-power SDRAM (LPSDR) organized as 2,097,152 words × 4 banks × 16 bits, operating at 1.8V supply with LVCMOS interface, CAS latency 2/3, and maximum clock frequency of 166MHz. It delivers burst lengths up to 8 and supports automatic temperature-compensated self-refresh (ATCSR) for battery-powered handheld devices.

For engineers reviewing the W987D2HBJX6I datasheet, W987D2HBJX6I pinout, W987D2HBJX6I application, or W987D2HBJX6I equivalent, key selection criteria include its 54-ball VFBGA (x16) package, deep power-down current of 10μA, partial array self-refresh capability, and industrial temperature range (−40°C to +85°C).

Technical Context

This LPSDR implements synchronous command decoding with four independent banks, row/column address multiplexing via A0–A11 and BA0/BA1, and supports full-featured low-power modes including Power Down, Deep Power Down, and Self Refresh with ATCSR. Its control logic responds to standard SDRAM commands (ACTIVATE, READ, WRITE, PRECHARGE, REFRESH) synchronized to CLK rising edges.

The device integrates on-die refresh counters, programmable output driver strength, and DQM-based input/output masking with zero-latency write blocking. Timing compliance includes tRCD = 18ns, tRC = 60ns (−6 speed grade), and tRFC = 72ns, all specified under 1.7–1.95V VDD/VDDQ operation.

Key Specifications

Pinout & Package

W987D2HBJX6I uses a 54-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package, 8mm × 10.5mm × 0.6mm, compliant with JEDEC MO-245. Pin assignment follows x16 organization with dedicated VDD/VSS and VDDQ/VSSQ power/ground pairs for noise isolation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar mobile low-power SDRAM applications.

Compared with W987D2HBJX6I, the IS42S16160J-6BLI offers baseline LPSDR functionality without ATCSR/PASR, while W987D2HBGX6I is a functionally identical Winbond-marked variant-making the former a cost-driven alternative and the latter a direct logistics substitute.

Availability

W987D2HBJX6I is available at Aetrix Electronics and suitable for smartphone baseband memory, digital still camera buffer, portable gaming console RAM, industrial handheld terminal memory, and other applications requiring stable component supply with industrial temperature support and ultra-low deep power-down current.

Supply support for W987D2HBJX6I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory and microcontrollers, with leadership in serial flash, PSRAM, and low-power DRAM solutions for mobile and embedded markets.

W987D2HBJX6I belongs to Winbond's Mobile LPSDR product line, designed specifically for battery-constrained handheld devices requiring high-density memory with aggressive power gating, thermal-aware refresh, and industrial-grade reliability.

FAQ

What is the package type and ball count for W987D2HBJX6I?

W987D2HBJX6I uses a 54-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package, measuring 8mm × 10.5mm × 0.6mm, with x16 data organization. This matches the LPSDR X16 ball assignment documented in the Winbond datasheet, including dedicated VDDQ/VSSQ planes for I/O noise isolation. The package is JEDEC MO-245 compliant and optimized for space-constrained mobile PCB layouts.

Does W987D2HBJX6I support CAS latency 2 and 3?

Yes, W987D2HBJX6I supports both CAS latency 2 and 3, selectable via the Mode Register Set (MRS) command using the A6–A4 field. CL=2 yields lower read access latency (tAC = 6ns) at the cost of tighter timing margins, while CL=3 provides more robust timing (tAC = 5.4ns) and is recommended for higher-speed or electrically noisy interfaces. Both are fully validated across the −40°C to +85°C range.

What is the minimum and maximum supply voltage for W987D2HBJX6I?

W987D2HBJX6I operates with VDD and VDDQ each rated from 1.7V to 1.95V. The absolute maximum rating is 2.7V, but sustained operation outside the 1.7–1.95V window risks timing violation or increased leakage. This 1.8V nominal range ensures compatibility with modern AP/SoC memory controllers and enables the low-power features like Deep Power Down and ATCSR to function as specified.

How does Automatic Temperature Compensated Self Refresh (ATCSR) work in W987D2HBJX6I?

W987D2HBJX6I integrates an on-die temperature sensor that dynamically adjusts self-refresh current based on junction temperature. For example, full-array ATCSR current ranges from 180μA at 45°C to 280μA at 85°C-ensuring sufficient refresh rate at high temperature while minimizing unnecessary power at lower temperatures. This feature is enabled by default after power-up initialization and requires no host software intervention.

Is W987D2HBJX6I compatible with standard SDRAM controllers?

Yes, W987D2HBJX6I is electrically and functionally compatible with standard SDRAM controllers supporting 1.8V LVCMOS interfaces and conventional command protocols (ACTIVATE, READ, WRITE, PRECHARGE, REFRESH). It adheres to JEDEC-standard timing parameters-including tRCD = 18ns and tRC = 60ns-and supports all required burst types and mode register configurations, enabling drop-in integration without controller firmware changes.