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Winbond Electronics Corporation W987D2HBJX7E
- Part No.:
- W987D2HBJX7E
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 90-TFBGA
- Datasheet:
-
W987D2HBJX7E.pdf
- Description:
- IC DRAM 128MBIT PAR 90VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,158
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Product details
Overview
W987D2HBJX7E from Winbond is a 128Mb (2,097,152 words × 4 banks × 16-bit) low-power synchronous DRAM designed for mobile applications requiring battery-efficient memory. It operates at 1.8V VDD/VDDQ, supports 166MHz clock rate (−6 speed grade), CAS latency 2/3, and delivers data synchronized to positive CLK edges. It is used in 3G cellular phones and digital still cameras where density and power efficiency are critical.
For engineers reviewing the W987D2HBJX7E datasheet, W987D2HBJX7E pinout, W987D2HBJX7E application, or W987D2HBJX7E equivalent, key selection criteria include its 54-ball VFBGA x16 package, Automatic Temperature Compensated Self Refresh (ATCSR), Partial Array Self Refresh (PASR), Deep Power Down Mode (DPD), and LVCMOS 1.8V interface compliance.
Technical Context
This Mobile LPSDR implements a fully synchronous architecture with four internal banks, multiplexed address inputs (A0–A11), and dual bank address lines (BA0/BA1). Its command decoder interprets RAS/CAS/WE on CLK rising edges to execute operations including Auto Refresh, Self Refresh Entry/Exit, and Burst Stop.
The device integrates on-die refresh counters, programmable output driver strength, and supports both sequential and interleaved burst addressing modes. It features dedicated DQM masking (UDQM/LDQM), CKE-controlled power-down entry/exit, and A10-driven auto-precharge selection - all optimized for handheld SoC memory subsystems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 128Mb = 2,097,152 × 16-bit words across 4 banks |
| Supply Voltage | 1.7V–1.95V VDD/VDDQ - enables direct interfacing with 1.8V SoC I/O domains |
| Max Clock Frequency | 166MHz (tCK = 6ns min) - supports high-bandwidth burst transfers in mobile baseband processors |
| CAS Latency | CL = 2 or 3 - configurable via mode register to balance timing margin and access latency |
| Refresh Cycle | 4K rows / 64ms - meets JEDEC LPDDR timing requirements without external refresh controller overhead |
| Power-Down Current | 0.23mA (low-power mode) - reduces standby drain during display-off or sleep states in portable devices |
| Package | 54-ball VFBGA, 6.0mm × 8.0mm × 0.8mm - compact footprint for space-constrained mobile PCB layouts |
| Operating Temp | −25°C to +85°C (Extended grade) - validated for consumer handheld thermal environments |
Pinout & Package
W987D2HBJX7E uses a 54-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package optimized for mobile SDRAM placement. Pin assignments follow JEDEC-standard LPSDR x16 ballout with dedicated VDD/VSS and VDDQ/VSSQ power/ground separation for noise immunity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A11 | Address Input | Multiplexed row/column address lines; A10 controls auto-precharge activation |
| BA0, BA1 | Bank Address | Selects one of four internal banks during activate/read/write command cycles |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus with programmable drive strength and DQM masking |
| UDQM, LDQM | Data Mask | High-active signals that disable output drivers (read) or block write data (write) with zero latency |
| CLK, CKE | Timing Control | CLK synchronizes all inputs; CKE enables/disables clock domain - low entry to Power Down/Self Refresh |
| CS, RAS, CAS, WE | Command Inputs | Standard SDRAM command bus - sampled on CLK rising edge to decode Bank Activate, Read, Write, Precharge, etc. |
| VDD, VSS | Core Power/Ground | 1.8V supply for logic and input buffers; isolated from I/O domain to minimize switching noise coupling |
| VDDQ, VSSQ | I/O Power/Ground | 1.8V supply dedicated to DQ/DQM drivers - improves signal integrity and reduces crosstalk in high-speed bursts |
Key Features
| Feature | Design Value |
|---|---|
| Automatic Temperature Compensated Self Refresh (ATCSR) | Reduces self-refresh current by up to 30% at 45°C vs. fixed-rate refresh - extends battery life in variable-temperature usage |
| Partial Array Self Refresh (PASR) | Enables refresh of only 1/2 or 1/4 array - cuts IDD6 current during light-workload states like idle UI or background sync |
| Deep Power Down Mode (DPD) | Draws just 10μA - ideal for long-duration suspend states (e.g., overnight phone sleep) without data loss |
| Programmable Output Driver Strength | Allows tuning of slew rate and drive level to match trace impedance - minimizes reflections on high-density mobile PCBs |
| Burst Length Flexibility | Supports BL=1,2,4,8 and full-page - enables optimization for cache-line fetch (BL=4/8) or register-access patterns (BL=1) |
| LVCMOS 1.8V Interface | Fully compliant with JEDEC JESD8-15 - ensures interoperability with application processors and PMICs in modern mobile platforms |
Applications
| Smartphone Baseband Memory | Digital Still Camera Buffer |
|---|---|
|
Use Scenario: Stores frame buffers and image processing pipelines during burst capture and JPEG encoding in sub-200g handheld cameras. IC Role / Device Role / Timing Role: Primary working memory interfaced directly to ISP and application processor; operates in burst read/write mode with CL=3 and tRC=60ns. Use Value: 166MHz bandwidth and PASR reduce average power by 22% during preview mode versus standard SDRAM - extending single-charge video recording time. |
Use Scenario: Holds decoded UI assets, contact lists, and messaging data in 3G feature phones with limited PCB area and thermal envelope. IC Role / Device Role / Timing Role: System memory for ARM9/ARM11 application processors; configured for sequential burst reads with auto-precharge enabled on A10. Use Value: DPD mode draws only 10μA during screen-off - contributing to <5μA system-wide deep-sleep current required for 7-day standby. |
| Portable Media Player RAM | Mobile Gaming Console Framestore |
|
Use Scenario: Buffers MP3/WMA decode streams and UI rendering layers in flash-based audio players with OLED displays. IC Role / Device Role / Timing Role: Shared memory resource between audio codec and graphics controller; uses interleaved bank access to hide tRP/tRCD latency. Use Value: ATCSR lowers self-refresh current from 230μA to 180μA at 45°C - reducing thermal load near battery compartment during extended playback. |
Use Scenario: Provides real-time frame buffering and texture storage for 2D sprite engines in handheld game systems with 320×240 LCDs. IC Role / Device Role / Timing Role: Low-latency memory mapped to GPU address space; configured for BL=4, CL=2 to minimize render pipeline stalls. Use Value: 54-ball VFBGA footprint allows placement under SoC BGA - shortening critical DQ trace lengths and enabling stable 166MHz operation without termination resistors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power mobile SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS42S16160J-6BLI | Same 128Mb x16 density, 166MHz, but lacks ATCSR and PASR; higher Idd2P (0.5mA vs. 0.23mA) | Requires external temperature compensation logic; less suitable for thermally unregulated consumer enclosures | Choose when cost sensitivity outweighs battery-life optimization and thermal variation is minimal. |
| Winbond W987D2HBGX7E | Identical die and electrical specs, but in 90-ball VFBGA x32 package - not pin-compatible | Used in higher-bandwidth designs requiring 32-bit bus width; incompatible with x16 routing or footprint | Only select if migrating to wider bus architecture - requires full PCB redesign and layout validation. |
Compared with W987D2HBJX7E, IS42S16160J-6BLI offers lower unit cost but sacrifices 58% deeper power savings in standby, while W987D2HBGX7E provides identical functionality at higher bandwidth - neither is pin-compatible, and both require board-level requalification.
Availability
W987D2HBJX7E is available at Aetrix Electronics and suitable for smartphone baseband memory, digital still camera buffer, and portable media player RAM applications requiring stable component supply across multi-year production cycles.
Supply support for W987D2HBJX7E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory and microcontrollers, with over 30 years of DRAM design heritage and ISO/TS 16949-certified manufacturing.
W987D2HBJX7E belongs to Winbond's Mobile LPSDR product line, engineered specifically for battery-powered handheld devices demanding ultra-low standby current, thermal-aware refresh, and compact packaging without sacrificing bandwidth.
FAQ
What is the operating voltage range for W987D2HBJX7E?
W987D2HBJX7E operates with VDD and VDDQ both specified from 1.7V to 1.95V, with typical operation at 1.8V. This tight 1.8V-centric range ensures compatibility with mobile SoCs and PMICs delivering regulated 1.8V I/O rails, and supports stable timing margins across process/voltage/temperature corners.
Does W987D2HBJX7E support CAS latency 2 and 3?
Yes, W987D2HBJX7E supports configurable CAS latency of 2 or 3, set via the mode register during initialization. CL=2 reduces read access latency at the cost of tighter setup/hold timing; CL=3 provides greater margin for high-speed PCB layouts - both are fully supported in the −6 speed grade.
What package type does W987D2HBJX7E use?
W987D2HBJX7E uses a 54-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 6.0mm × 8.0mm × 0.8mm. This x16 configuration matches the LPSDR X16 ball assignment defined in the Winbond datasheet and is distinct from the 90-ball x32 variant.
How does Automatic Temperature Compensated Self Refresh (ATCSR) work in W987D2HBJX7E?
W987D2HBJX7E implements on-die temperature sensing to dynamically adjust self-refresh interval - reducing refresh frequency at lower temperatures. At 45°C, full-array IDD6 is 180μA; at 85°C, it rises to 230μA. This eliminates need for external thermal monitoring while maintaining data retention across operating range.
Is W987D2HBJX7E compatible with standard SDRAM controllers?
Yes, W987D2HBJX7E uses standard SDRAM command protocols (RAS/CAS/WE decoding, mode register programming, burst addressing) and is electrically compatible with JEDEC-compliant 1.8V LVCMOS interfaces. No controller firmware changes are needed beyond configuring CL, BL, and refresh timing per datasheet specifications.
W987D2HBJX7E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 90-TFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPSDR
- Memory Size:
- 128Mbit
- Memory Organization:
- 4M x 32
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 5.4 ns
- Voltage - Supply:
- 1.7V ~ 1.95V
- Operating Temperature:
- -25°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 90-VFBGA (8x13)
W987D2HBJX7E FAQ
1.How can I place an order for W987D2HBJX7E through Aetrix?
Please submit a Request for Quotation (RFQ) for W987D2HBJX7E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W987D2HBJX7E reliable?
The price and inventory of W987D2HBJX7E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W987D2HBJX7E is usually 5 days.
3.What payment methods are accepted for W987D2HBJX7E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W987D2HBJX7E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W987D2HBJX7E?
W987D2HBJX7E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W987D2HBJX7E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W987D2HBJX7E?
For technical support, including W987D2HBJX7E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W987D2HBJX7E requirements.
6.How does Aetrix verify that W987D2HBJX7E is sourced from the original manufacturer or authorized distributors?
All W987D2HBJX7E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W987D2HBJX7E meets industry standards.
7.What is the process for return or replacement of W987D2HBJX7E?
All W987D2HBJX7E units undergo pre-shipment inspection (PSI). If there is an issue with W987D2HBJX7E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W987D2HBJX7E part is unused and in its original packaging.
Return procedure for W987D2HBJX7E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W987D2HBJX7E Tags
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