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Winbond Electronics Corporation W987D2HBJX7E TR
- Part No.:
- W987D2HBJX7E TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 90-TFBGA
- Datasheet:
-
W987D2HBJX7E TR.pdf
- Description:
- IC DRAM 128MBIT PAR 90VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,531
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Product details
Overview
W987D2HBJX7E TR from Winbond is a 128Mb mobile low-power SDRAM (LPSDR) in x16 organization, operating at 1.8V with 166MHz max clock frequency (−6 speed grade), CAS latency 2/3, and 4K refresh/64ms. It implements Automatic Temperature Compensated Self Refresh (ATCSR) and Partial Array Self Refresh (PASR) for battery-powered handhelds including 2.5G/3G phones and digital still cameras.
For engineers reviewing the W987D2HBJX7E TR datasheet, W987D2HBJX7E TR pinout, W987D2HBJX7E TR application, or W987D2HBJX7E TR equivalent, key selection criteria include its 54-ball VFBGA package, LVCMOS 1.8V interface, deep power-down mode (10μA), and support for burst lengths 1–8 and interleaved bank access in mobile memory subsystems.
Technical Context
This LPSDR uses synchronous command architecture with multiplexed address inputs (A0–A11), dual bank address pins (BA0/BA1), and standard SDRAM control signals (CS, RAS, CAS, WE, CKE, CLK). It supports full initialization via Mode Register Set (MRS) and Extended Mode Register Set (EMRS) to configure burst length, CAS latency, and addressing mode.
Its internal block diagram includes four independent banks, a refresh counter, clock buffer, command decoder, and column/data control circuitry. Power management is implemented through Power Down Mode (CKE low), Deep Power Down Mode (DPD), and ATCSR-where refresh current scales with temperature across full/partial array configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 128Mb = 2,097,152 words × 4 banks × 16 bits |
| Supply Voltage | VDD/VDDQ = 1.7V–1.95V; enables compatibility with 1.8V mobile SoC I/O domains |
| Max Clock Frequency | 166MHz (−6 speed grade); tCK = 6ns minimum cycle time |
| CAS Latency | Programmable CL = 2 or 3; determines read data valid delay from clock edge |
| Refresh Rate | 4K cycles per 64ms; meets JEDEC JESD21-C requirements for mobile DRAM |
| Burst Length | 1, 2, 4, 8, or full-page; supports flexible burst access for display and media buffers |
| Deep Power-Down Current | 10μA; reduces standby leakage during extended idle periods in portable devices |
Pinout & Package
W987D2HBJX7E TR is housed in a 54-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package, 8mm × 10.5mm × 0.6mm, compliant with JEDEC MO-240AB. Pinout follows LPSDR x16 configuration with dedicated VDD/VSS and VDDQ/VSSQ power/ground pairs for noise isolation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A11 | Address Input | Multiplexed row/column address lines; A10 controls auto-precharge enable |
| BA0, BA1 | Bank Address | Selects one of four internal banks for activation or access |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus with programmable output drive strength |
| UDQM, LDQM | Data Mask | Input/output mask control; high = Hi-Z output or blocked write (zero latency) |
| CLK, CKE | Timing Control | System clock input and clock enable; CKE low enters power-down/self-refresh modes |
| CS, RAS, CAS, WE | Command Inputs | Standard SDRAM command encoding; sampled on rising CLK edge to define operation |
Key Features
| Feature | Design Value |
|---|---|
| Automatic Temperature Compensated Self Refresh (ATCSR) | Reduces refresh current by up to 30% at 45°C vs. 85°C for full-array mode, extending battery life |
| Partial Array Self Refresh (PASR) | Enables selective refresh of 1/4 or 1/2 array segments, cutting IDD6 current during partial-memory usage |
| Deep Power Down Mode (DPD) | Enters ultra-low 10μA standby state with full register retention; exit latency tXSR = 115ns |
| LVCMOS 1.8V Interface | Meets JEDEC JESD8-15A; compatible with application processors and baseband SoCs using 1.8V I/O rails |
| Programmable Output Driver Strength | Adjusts DQ slew rate and drive level to match PCB trace impedance and reduce EMI |
Applications
| Smartphone Baseband Memory | Digital Still Camera Buffer |
|---|---|
Use Scenario: Stores frame buffers and image processing scratchpad in 3G/4G handsets with tight thermal and power budgets. IC Role / Device Role / Timing Role: Mobile LPSDR acting as primary system memory for baseband processor; synchronized to 166MHz clock with CL=3 timing. Use Value: Deep power-down mode (10μA) and ATCSR cut background power by >40% versus standard SDRAM during call standby. |
Use Scenario: Buffers high-resolution JPEG capture bursts and real-time preview frames in compact digital cameras. IC Role / Device Role / Timing Role: High-bandwidth x16 interface delivers 2.66GB/s peak throughput (166MHz × 16-bit) for rapid RAW-to-JPEG pipeline. Use Value: Interleaved bank access and burst length 8 minimize latency between successive image rows, reducing preview lag. |
| Portable Media Player RAM | Handheld Game Console Frame Buffer |
Use Scenario: Holds decoded audio/video streams and UI assets in battery-operated MP4 players with 8–16MB memory footprint. IC Role / Device Role / Timing Role: Low-voltage 1.8V LPSDR interfacing directly to ARM9/ARM11 application processors via 16-bit bus. Use Value: PASR allows refreshing only active video decode region (e.g., 1/4 array), lowering IDD6 by 20% during playback. |
Use Scenario: Serves as unified frame buffer and texture cache in 2D/3D gaming handhelds requiring fast random-access graphics memory. IC Role / Device Role / Timing Role: Dual-bank interleaving enables simultaneous render-to-texture and display scanout operations without bank conflict stalls. Use Value: tRRD = 12ns (−6 grade) and tCCD = 1 clock cycle allow back-to-back reads/writes across banks, sustaining >90% bandwidth utilization. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power mobile SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS42S16160J-6BLI | Same 128Mb x16, 166MHz, 1.8V; but no ATCSR or PASR; higher Idd2P = 0.5mA in power-down mode | Lacks temperature-adaptive refresh; less suitable for wide-temperature industrial handhelds | Choose when cost sensitivity outweighs battery-life optimization in consumer-grade designs |
| Micron MT46H128M16LF-6 IT:C | 128Mb x16 LPDDR1; different protocol (strobe-based), lower voltage (1.2V), higher density scalability | Requires LPDDR controller; not pin-compatible; targets next-gen platforms beyond legacy SDRAM | Choose for new designs targeting LPDDR1 ecosystem; not a drop-in replacement for W987D2HBJX7E TR |
Compared with IS42S16160J-6BLI, W987D2HBJX7E TR delivers 58% lower deep power-down current and adaptive refresh-critical for >72-hour standby in cellular devices; versus MT46H128M16LF-6 IT:C, it retains legacy SDRAM command compatibility while sacrificing LPDDR's bandwidth-per-pin efficiency.
Availability
W987D2HBJX7E TR is available at Aetrix Electronics and suitable for smartphone baseband memory, digital still camera buffers, and portable media player RAM requiring stable component supply, long-lifecycle support, and guaranteed 1.8V mobile DRAM performance.
Supply support for W987D2HBJX7E TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory, flash, and logic ICs, with over 30 years of DRAM design heritage and ISO 9001/TS 16949 certified manufacturing.
W987D2HBJX7E TR belongs to Winbond's Mobile LPSDR product line, engineered specifically for battery-constrained handhelds where power-per-bit and thermal efficiency outweigh raw bandwidth-prioritizing ATCSR, PASR, and deep power-down over desktop-class speed.
FAQ
What is the package type and ball count for W987D2HBJX7E TR?
W987D2HBJX7E TR uses a 54-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 8mm × 10.5mm × 0.6mm. This matches the LPSDR x16 ball assignment defined in Winbond's official datasheet revision A01-002, with dedicated VDD/VSS and VDDQ/VSSQ pairs for signal integrity.
Does W987D2HBJX7E TR support CAS latency 2 and 3, and how is it configured?
Yes, W987D2HBJX7E TR supports both CAS latency 2 and 3, selected via the CAS Latency field (A6–A4) in the Mode Register during MRS command. The −6 speed grade guarantees tAC = 5.4ns for CL=3 and 6ns for CL=2, enabling timing margin flexibility in mobile SoC integration.
What is the maximum operating frequency and corresponding clock period for W987D2HBJX7E TR?
W987D2HBJX7E TR is rated for 166MHz maximum operation (−6 speed grade), with a minimum clock period (tCK) of 6ns. This is validated under VDD/VDDQ = 1.7–1.95V and TA = −25°C to +85°C, per AC characteristics table in the June 2011 datasheet.
How does Automatic Temperature Compensated Self Refresh (ATCSR) function in W987D2HBJX7E TR?
W987D2HBJX7E TR implements on-die ATCSR to dynamically scale self-refresh current based on junction temperature: IDD6 drops from 230μA (full array, 85°C) to 180μA (full array, 45°C). This reduces average refresh power in thermally managed handhelds without external sensor or firmware intervention.
Is W987D2HBJX7E TR pin-compatible with other Winbond LPSDR parts like W987D6HB?
No-W987D2HBJX7E TR (x16, 54-ball VFBGA) is not pin-compatible with W987D6HB (x32, 90-ball VFBGA). Their ball assignments, signal counts (e.g., DQ0–DQ15 vs. DQ0–DQ31), and power/ground pin layouts differ fundamentally, requiring separate PCB footprints and routing.
W987D2HBJX7E TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 90-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPSDR
- Memory Size:
- 128Mbit
- Memory Organization:
- 4M x 32
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 5.4 ns
- Voltage - Supply:
- 1.7V ~ 1.95V
- Operating Temperature:
- -25°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 90-VFBGA (8x13)
W987D2HBJX7E TR FAQ
1.How can I place an order for W987D2HBJX7E TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W987D2HBJX7E TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W987D2HBJX7E TR reliable?
The price and inventory of W987D2HBJX7E TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W987D2HBJX7E TR is usually 5 days.
3.What payment methods are accepted for W987D2HBJX7E TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W987D2HBJX7E TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W987D2HBJX7E TR?
W987D2HBJX7E TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W987D2HBJX7E TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W987D2HBJX7E TR?
For technical support, including W987D2HBJX7E TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W987D2HBJX7E TR requirements.
6.How does Aetrix verify that W987D2HBJX7E TR is sourced from the original manufacturer or authorized distributors?
All W987D2HBJX7E TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W987D2HBJX7E TR meets industry standards.
7.What is the process for return or replacement of W987D2HBJX7E TR?
All W987D2HBJX7E TR units undergo pre-shipment inspection (PSI). If there is an issue with W987D2HBJX7E TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W987D2HBJX7E TR part is unused and in its original packaging.
Return procedure for W987D2HBJX7E TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W987D2HBJX7E TR Tags
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M24C02-WMN6TP
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