Winbond Electronics Corporation W987D6HBGX6E

Overview

W987D6HBGX6E from Winbond is a 128Mb (2,097,152 words × 4 banks × 16 bits) low-power synchronous DRAM designed for mobile applications requiring battery-efficient memory. It operates at 1.8V VDD/VDDQ, supports 166MHz clock rate (−6 speed grade), CAS latency 2/3, and features Automatic Temperature Compensated Self Refresh (ATCSR) and Partial Array Self Refresh (PASR). It is used in 3G cellular phones and digital still cameras where density and standby current < 0.23mA are critical.

For engineers reviewing the W987D6HBGX6E datasheet, W987D6HBGX6E pinout, W987D6HBGX6E application, or W987D6HBGX6E equivalent, key selection criteria include its 54-ball VFBGA x16 package, LVCMOS 1.8V interface compliance, deep power-down mode (10μA), 4K/64ms refresh, and burst length programmability (1–8, full page).

Technical Context

This Mobile LPSDR implements a fully synchronous architecture with command decoding driven by CLK rising edges, supporting bank-interleaved reads/writes and auto-precharge operations. Its internal block diagram includes four independent banks, a dedicated refresh counter, mode register for burst/CAS configuration, and separate VDD/VDDQ power domains to isolate core logic from I/O noise.

The device executes standard SDRAM command protocols-including ACTIVATE, READ/WRITE, PRECHARGE, REFRESH, and SELF REFRESH-with CKE-controlled power states (Power Down, Deep Power Down, Clock Suspend). ATCSR dynamically adjusts self-refresh current based on die temperature, while PASR enables selective bank retention during low-power operation.

Key Specifications

Pinout & Package

W987D6HBGX6E uses a 54-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package, 8mm × 10.5mm × 0.6mm, optimized for mobile PCB stacking. Pin assignments follow JEDEC-standard LPSDR x16 ballout.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power mobile SDRAM applications.

Compared with IS42S16160F-6BLI, W987D6HBGX6E delivers superior thermal adaptability and lower deep-sleep current; versus MT46H128M16LF-6 IT:C, it retains pin- and protocol-compatibility with existing SDRAM-based designs while offering better power efficiency at 166MHz.

Availability

W987D6HBGX6E is available at Aetrix Electronics and suitable for 3G cellular phone baseband subsystems, digital still camera image buffers, and mobile game console system memory requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W987D6HBGX6E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory and microcontrollers, with over 30 years of DRAM design heritage and ISO/TS 16949-certified manufacturing.

W987D6HBGX6E belongs to Winbond's Mobile LPSDR product line, engineered specifically for battery-powered portable electronics demanding ultra-low standby current, thermal-aware refresh, and JEDEC-compliant SDRAM compatibility without performance compromise.

FAQ

What is the operating temperature range supported by the W987D6HBGX6E?

The W987D6HBGX6E is qualified for industrial temperature operation from −40°C to +85°C. This rating is confirmed in the "Operating Temperature Range" section of the official datasheet (Revision A01-002, Section 2), making it suitable for automotive infotainment displays and ruggedized handhelds exposed to wide ambient conditions. The ATCSR feature ensures stable self-refresh behavior across this full range.

Does the W987D6HBGX6E support both CAS latency 2 and CAS latency 3 modes?

Yes, the W987D6HBGX6E supports programmable CAS latency of either 2 or 3, configured via the Mode Register Set (MRS) command using bits A6–A4. This is explicitly stated in Section 2 ("Features") and detailed in Section 8.5.7 of the datasheet. CL=2 reduces read access time to 12ns (tAC), while CL=3 enables higher clock stability in noisy environments.

What package type and ball count does the W987D6HBGX6E use?

W987D6HBGX6E uses a 54-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package, as specified in Section 3.1 ("Ball Assignment: LPSDR X 16") and Section 11.1 ("Package Dimension"). The mechanical outline is 8mm × 10.5mm × 0.6mm, with 0.5mm ball pitch - identical to industry-standard x16 mobile SDRAM footprints.

How does the Automatic Temperature Compensated Self Refresh (ATCSR) function in the W987D6HBGX6E?

ATCSR in the W987D6HBGX6E dynamically scales self-refresh current based on on-die temperature: at 45°C, full-array IDD6 is 180μA (low power mode), rising to 230μA at 85°C. This is measured per Section 6.5 and eliminates over-provisioning of refresh current at room temperature, directly reducing average system power in thermally variable deployments like smartphones.

Is the W987D6HBGX6E pin-compatible with standard SDRAM controllers?

Yes, the W987D6HBGX6E implements JEDEC-standard LPSDR x16 command, address, and data signaling - including CLK, CKE, CS, RAS, CAS, WE, A0–A11, BA0/BA1, DQ0–DQ15, and UDQM/LDQM. Its timing parameters (e.g., tRCD = 18ns, tRP = 18ns) align with common SDRAM controller implementations, enabling drop-in replacement in validated designs without firmware or layout changes.