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Winbond Electronics Corporation W987D6HBGX6E TR
- Part No.:
- W987D6HBGX6E TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 54-TFBGA
- Datasheet:
-
W987D6HBGX6E TR.pdf
- Description:
- IC DRAM 128MBIT PAR 54VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,070
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Product details
Overview
W987D6HBGX6E TR from Winbond is a 128Mb mobile low-power SDRAM (LPSDR) in x16 organization, operating at 1.8V with 166MHz max clock frequency (CL=3), supporting CAS latency 2/3, burst lengths 1–8/full page, and automatic temperature-compensated self-refresh (ATCSR). It serves as main system memory in battery-powered handheld devices requiring high density and ultra-low standby current.
For engineers reviewing the W987D6HBGX6E TR datasheet, W987D6HBGX6E TR pinout, W987D6HBGX6E TR application, or W987D6HBGX6E TR equivalent, key selection criteria include its 54-ball VFBGA package, 0.23mA power-down current, partial array self-refresh (PASR), deep power-down mode (DPD), and LVCMOS 1.8V interface compatibility with mobile baseband and application processors.
Technical Context
This LPSDR implements a synchronous, fully pipelined architecture with four internal banks, multiplexed address/data bus, and command-decoded operation synchronized to CLK rising edges. It supports programmable output driver strength, auto-precharge (A10-controlled), and extended mode register for PASR configuration.
Refresh is managed via 4K-cycle/64ms timing with tRFC = 72ns; ATCSR dynamically adjusts self-refresh current across −25°C to +85°C, reducing IDD6 from 150μA (¼-array, 45°C) to 280μA (full-array, 85°C) in normal power mode. Deep power-down entry/exit requires tDPD = 100ns and tXSR = 115ns, respectively.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 128Mb (2,097,152 words × 4 banks × 16 bits) |
| Supply Voltage | VDD/VDDQ = 1.7V–1.95V - enables direct interfacing with 1.8V SoC I/O domains |
| Max Clock Frequency | 166MHz (tCK = 6ns, CL=3) - delivers 332MB/s peak bandwidth in burst-8 reads |
| CAS Latency | Programmable CL=2 or CL=3 - balances timing margin and access latency for mobile SoC timing budgets |
| Power-Down Current | 0.23mA (low-power mode, CKE=LOW) - extends battery life during display-off or sleep states |
| Deep Power-Down Current | 10μA - reduces system leakage during extended idle periods (e.g., camera standby) |
| Refresh Cycle | 4K/64ms - meets JEDEC JESD21-C requirements without external refresh controller overhead |
| Operating Temperature | −25°C to +85°C (extended grade) - qualified for consumer handheld thermal profiles |
Pinout & Package
W987D6HBGX6E TR uses a 54-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package, 8mm × 13mm × 0.8mm, compliant with JEDEC MO-240AB. Pin assignments follow LPSDR x16 ball map with dedicated VDD/VSS and VDDQ/VSSQ power/ground pairs for noise isolation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A11 | Address Input | Multiplexed row/column address; A10 controls auto-precharge enable |
| BA0, BA1 | Bank Address | Selects one of four internal banks for concurrent row activation |
| DQ0–DQ15 | Data I/O | Bidirectional 16-bit data bus with programmable drive strength |
| UDQM, LDQM | Data Mask | Hi-Z output control (read) and write masking (write) with zero-latency blocking |
| CLK, CKE | Timing Control | CLK synchronizes all inputs; CKE gates clock domain entry into power-down/self-refresh |
| CS, RAS, CAS, WE | Command Inputs | Decode standard SDRAM command set (activate, read, write, precharge, refresh) |
| VDD, VSS | Core Power/Ground | 1.8V supply for logic and address buffers; isolated from I/O domain |
| VDDQ, VSSQ | I/O Power/Ground | 1.8V supply for DQ/DQM drivers; separate plane minimizes switching noise coupling |
Key Features
| Feature | Design Value |
|---|---|
| Automatic Temperature Compensated Self Refresh (ATCSR) | Reduces self-refresh current by up to 30% at 45°C vs. fixed-rate refresh, extending battery runtime in variable-temperature environments |
| Partial Array Self Refresh (PASR) | Configurable via extended mode register to refresh only ¼, ½, or full array - cuts IDD6 by 10–30μA during partial-memory-active states |
| Deep Power Down Mode (DPD) | Enters <10μA state with retention loss; exit latency tXSR = 115ns - suitable for rapid wake-up in camera buffer or audio playback buffers |
| LVCMOS 1.8V Interface | Fully compatible with 1.8V mobile processor I/O standards, eliminating level-shifting components and PCB area |
| Programmable Output Driver Strength | Adjusts DQ slew rate and drive current to match trace impedance and reduce EMI in compact handheld PCB layouts |
Applications
| Smartphone Baseband Memory | Digital Still Camera Buffer |
|---|---|
Use Scenario: Stores firmware, protocol stacks, and real-time signal processing buffers in 2G/3G cellular modems. IC Role / Device Role / Timing Role: Primary working memory interfaced directly to baseband SoC's memory controller with CL=3, tRCD=18ns timing compliance. Use Value: 0.23mA power-down current extends talk time; PASR reduces background refresh load during idle voice calls. |
Use Scenario: Captures and buffers high-resolution JPEG/RAW frames before compression and storage. IC Role / Device Role / Timing Role: High-bandwidth frame buffer supporting burst-8 writes at 166MHz for sensor-to-memory transfer. Use Value: Deep power-down mode (<10μA) preserves charge between shots; ATCSR maintains data integrity across ambient temperature shifts. |
| Portable Media Player UI Cache | Mobile Game Console Frame Buffer |
Use Scenario: Holds GUI assets, font tables, and decoded audio/video segments for responsive touch navigation. IC Role / Device Role / Timing Role: Low-latency x16 memory mapped to ARM application processor with burst-length-4 reads for icon loading. Use Value: CL=2 option enables sub-12ns access for smooth UI scrolling; VFBGA footprint saves board space in slim form factors. |
Use Scenario: Renders 2D/3D graphics frames and stores texture assets in handheld gaming hardware. IC Role / Device Role / Timing Role: Dual-bank interleaved memory supporting simultaneous render-to-texture and display fetch operations. Use Value: tRRD = 12ns enables rapid bank switching; 75mA burst-mode current sustains sustained GPU memory bandwidth without thermal throttling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power mobile SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS42S16160J-6BLI | Same 128Mb x16, 166MHz, 54-ball VFBGA; lacks ATCSR and PASR; higher Idd2P = 0.5mA | Suitable for cost-sensitive designs where temperature-aware refresh is not required | Choose when thermal variation is minimal and power budget allows +0.27mA standby penalty |
| Winbond W987D2HBGX6E TR | Same family, x32 organization (90-ball VFBGA); identical electrical specs but doubled data width and larger package | Used where SoC demands 32-bit memory interface or higher per-cycle throughput | Select only if board layout accommodates 90-ball footprint and system requires x32 data path |
Compared with W987D6HBGX6E TR, IS42S16160J-6BLI offers pin-compatible replacement without ATCSR/PASR benefits, while W987D2HBGX6E TR provides identical functionality in x32 format-requiring PCB redesign but enabling higher bandwidth in memory-constrained portable systems.
Availability
W987D6HBGX6E TR is available at Aetrix Electronics and suitable for smartphone baseband subsystems, digital still camera image buffers, portable media player UI caches, and mobile game console frame buffers requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W987D6HBGX6E TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory, flash, and logic ICs, with over 30 years of DRAM design heritage and ISO/TS 16949-certified manufacturing.
W987D6HBGX6E TR belongs to Winbond's Mobile LPSDR product line, engineered specifically for battery-operated handheld devices demanding ultra-low active/standby power, JEDEC-compliant timing, and robust thermal performance in compact VFBGA packages.
FAQ
What is the package type and ball count for W987D6HBGX6E TR?
W987D6HBGX6E TR uses a 54-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 8mm × 13mm × 0.8mm. This matches the LPSDR x16 ball assignment defined in the Winbond datasheet revision A01-002, with dedicated VDD/VSS and VDDQ/VSSQ power/ground pairs for signal integrity.
Does W987D6HBGX6E TR support both CAS latency 2 and 3?
Yes, W987D6HBGX6E TR supports programmable CAS latency of 2 or 3 via mode register configuration. At 166MHz (−6 speed grade), CL=3 is specified with tAC = 5.4ns; CL=2 yields tAC = 6ns and is valid up to 133MHz (−75 speed grade), providing flexibility for timing-critical mobile SoC integration.
What is the minimum and maximum supply voltage for W987D6HBGX6E TR?
W987D6HBGX6E TR operates with VDD and VDDQ both rated from 1.7V to 1.95V. The typical nominal supply is 1.8V, and the device complies with LVCMOS 1.8V interface standards - ensuring interoperability with mainstream mobile application processors and baseband SoCs without level shifters.
How does Automatic Temperature Compensated Self Refresh (ATCSR) function in W987D6HBGX6E TR?
W987D6HBGX6E TR implements on-die ATCSR to dynamically scale self-refresh current based on junction temperature. At 45°C, full-array IDD6 is 180μA (low-power mode); at 85°C, it rises to 230μA - maintaining data retention while minimizing unnecessary power draw across operational temperature ranges.
Is W987D6HBGX6E TR pin-compatible with other Winbond LPSDR parts like W987D2HBGX6E TR?
No, W987D6HBGX6E TR is not pin-compatible with W987D2HBGX6E TR. The former is x16 (54-ball VFBGA), while the latter is x32 (90-ball VFBGA) - differing in ball count, layout, and signal mapping. Interchange requires PCB redesign; they share functional and electrical compatibility but not mechanical interchangeability.
W987D6HBGX6E TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 54-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPSDR
- Memory Size:
- 128Mbit
- Memory Organization:
- 8M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 166 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 5.4 ns
- Voltage - Supply:
- 1.7V ~ 1.95V
- Operating Temperature:
- -25°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-VFBGA (8x9)
W987D6HBGX6E TR FAQ
1.How can I place an order for W987D6HBGX6E TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W987D6HBGX6E TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W987D6HBGX6E TR reliable?
The price and inventory of W987D6HBGX6E TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W987D6HBGX6E TR is usually 5 days.
3.What payment methods are accepted for W987D6HBGX6E TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W987D6HBGX6E TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W987D6HBGX6E TR?
W987D6HBGX6E TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W987D6HBGX6E TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W987D6HBGX6E TR?
For technical support, including W987D6HBGX6E TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W987D6HBGX6E TR requirements.
6.How does Aetrix verify that W987D6HBGX6E TR is sourced from the original manufacturer or authorized distributors?
All W987D6HBGX6E TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W987D6HBGX6E TR meets industry standards.
7.What is the process for return or replacement of W987D6HBGX6E TR?
All W987D6HBGX6E TR units undergo pre-shipment inspection (PSI). If there is an issue with W987D6HBGX6E TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W987D6HBGX6E TR part is unused and in its original packaging.
Return procedure for W987D6HBGX6E TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W987D6HBGX6E TR Tags
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