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Winbond Electronics Corporation W987D6HBGX6I
- Part No.:
- W987D6HBGX6I
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 54-TFBGA
- Datasheet:
-
W987D6HBGX6I.pdf
- Description:
- IC DRAM 128MBIT PAR 54VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,987
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Product details
Overview
W987D6HBGX6I from Winbond is a 128Mb mobile low-power SDRAM (LPSDR) in x16 organization, operating at 1.8V with 166MHz max clock frequency (CL=3), supporting CAS latency 2/3, 4K refresh/64ms, and Automatic Temperature Compensated Self Refresh (ATCSR). It serves as main memory in battery-powered handheld devices requiring high density and ultra-low standby current (0.23mA in power-down mode).
For engineers reviewing the W987D6HBGX6I datasheet, W987D6HBGX6I pinout, W987D6HBGX6I application, or W987D6HBGX6I equivalent, key selection criteria include its VFBGA-54 package, 1.7–1.95V dual-supply operation (VDD/VDDQ), partial array self-refresh (PASR), deep power-down mode (10μA), and LVCMOS-compatible interface timing.
Technical Context
This LPSDR implements a synchronous, fully pipelined architecture with four internal banks, multiplexed address/data bus, and command-driven operation via RAS/CAS/WE. It supports burst lengths of 1, 2, 4, 8, and full-page, with programmable output driver strength and auto-precharge controlled by A10.
The device integrates on-die temperature sensing for ATCSR, enabling dynamic adjustment of self-refresh current across −25°C to +85°C. Its block diagram confirms dedicated clock buffer, command decoder, mode register, and independent I/O buffers powered by isolated VDDQ/VSSQ rails to minimize noise coupling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 128Mb = 2,097,152 words × 4 banks × 16 bits (x16 organization) |
| Supply Voltage | VDD = 1.7–1.95V; VDDQ = 1.7–1.95V - enables compatibility with 1.8V system rails and low-noise I/O separation |
| Max Clock Frequency | 166MHz (−6 speed grade) - defines maximum data throughput of 332MB/s in burst mode |
| CAS Latency | CL = 2 or 3 - determines read access latency (tAC = 5.4ns at CL=3), critical for timing closure in host controller design |
| Refresh Requirement | 4K cycles / 64ms - mandates host controller or memory controller to issue refresh commands every 15.625μs per bank |
| Power-Down Current | Idd2P = 0.23mA (low-power mode) - enables >100-hour battery life in idle states for portable applications |
| Deep Power-Down | Izz = 10μA - reduces leakage during extended sleep, requiring tXSR = 115ns exit delay before next valid command |
Pinout & Package
W987D6HBGX6I is packaged in a 54-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) with 0.5mm pitch, footprint compliant with JEDEC MO-245. The package supports x16 data interface and includes dedicated VDDQ/VSSQ rails for I/O noise isolation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A11 | Address Input | Multiplexed row/column address lines; A10 controls auto-precharge enable/disable |
| BA0, BA1 | Bank Address | Selects one of four internal banks during activate or read/write command cycles |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; supports burst transfers with programmable drive strength |
| UDQM, LDQM | Data Mask | Input mask for write operations; places DQ outputs in Hi-Z during reads (latency 2 or 3) |
| CLK, CKE | Timing Control | CLK synchronizes all inputs; CKE low enters power-down, suspend, or self-refresh modes |
| CS, RAS, CAS, WE | Command Interface | Standard SDRAM command pins defining activate, precharge, read, write, and refresh operations |
Key Features
| Feature | Design Value |
|---|---|
| Automatic Temperature Compensated Self Refresh (ATCSR) | Reduces self-refresh current by up to 25% at 45°C vs. 85°C (e.g., 180μA → 230μA full-array), extending battery life across operating temperatures |
| Programmable Partial Array Self Refresh (PASR) | Allows refresh of only 1/4, 1/2, or full array - cuts IDD6 current by up to 30% when memory usage is sparse |
| Deep Power Down Mode (DPD) | Lowers standby current to 10μA with retention loss; requires 115ns tXSR delay before resuming operation |
| LVCMOS-Compatible Interface | Supports VIH = 0.8×VDDQ and VOL ≤ 0.2V - ensures interoperability with 1.8V ASIC/FPGA memory controllers |
| Separate VDDQ/VSSQ Rails | Isolates I/O power/ground from core logic - suppresses switching noise and improves signal integrity on DQ lines |
Applications
| Smartphone Baseband Memory | Digital Still Camera Buffer |
|---|---|
|
Use Scenario: Stores frame buffers and image processing pipelines in 3G/4G handsets where thermal envelope and battery runtime are constrained. IC Role / Device Role / Timing Role: Primary working memory interfaced to baseband processor's SDRAM controller; operates at CL=3, tRC=60ns for real-time video decode. Use Value: 0.23mA power-down current and ATCSR reduce average system power by ~18% during UI idle periods versus standard SDRAM. |
Use Scenario: Buffers high-resolution JPEG capture bursts and RAW sensor data in compact digital cameras with limited PCB area. IC Role / Device Role / Timing Role: High-bandwidth frame store synchronized to image sensor clock; uses burst length=8 and tCCD=1 cycle for rapid sequential writes. Use Value: VFBGA-54 footprint (8mm × 10.5mm) saves >35% board space vs. TSOP packages while maintaining 332MB/s peak bandwidth. |
| Portable Media Player RAM | Industrial Handheld Terminal |
|
Use Scenario: Holds decoded audio/video streams and UI assets in battery-operated MP4 players requiring silent, fanless operation. IC Role / Device Role / Timing Role: System memory for ARM9/ARM11 application processor; leverages PASR to refresh only active codec buffers during playback. Use Value: Deep power-down mode (10μA) extends playback time by 2.3 hours per 1000mAh battery versus standard LPDDR1 alternatives. |
Use Scenario: Provides reliable runtime memory in warehouse scanners and field service terminals exposed to −25°C to +85°C ambient conditions. IC Role / Device Role / Timing Role: Main memory for industrial-grade SoC; uses extended temperature grade (−25°C to +85°C) and robust tRCD=18ns timing margin. Use Value: Guaranteed operation at 166MHz across full temperature range eliminates derating penalties common in commercial-grade SDRAM. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power mobile SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS42S16160J-6BLI | Same x16, 128Mb, 166MHz, VFBGA-54; but lacks ATCSR and PASR - fixed 4K refresh only | Lower cost for non-temperature-varying environments; no dynamic current optimization | Choose when thermal variation is minimal and BOM cost dominates over battery life optimization |
| Winbond W987D6HBGX7I | Same die, identical pinout and features; slower −75 speed grade (133MHz max, tRC=72.5ns) | Suitable for lower-clock-rate controllers; higher timing margins ease layout and signal integrity | Choose when host system clock is ≤133MHz or when relaxed tRCD/tRP timing simplifies controller firmware |
Compared with W987D6HBGX6I, the IS42S16160J-6BLI offers cost savings but forfeits temperature-adaptive refresh and partial-array control, while the W987D6HBGX7I retains full feature parity at reduced speed - making the −6 grade optimal for performance-critical, thermally dynamic handheld designs.
Availability
W987D6HBGX6I is available at Aetrix Electronics and suitable for smartphone baseband subsystems, digital camera frame buffering, and industrial handheld terminal memory requiring stable component supply, long-term lifecycle support, and guaranteed extended-temperature operation.
Supply support for W987D6HBGX6I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory, flash, and logic ICs, with over 30 years of DRAM design heritage and ISO/TS 16949-certified manufacturing.
W987D6HBGX6I belongs to Winbond's Mobile LPSDR product line, engineered specifically for battery-constrained portable electronics demanding high density, sub-1mA standby current, and robust thermal adaptability without external temperature sensors.
FAQ
What is the operating temperature range for W987D6HBGX6I?
W987D6HBGX6I is rated for extended industrial operation from −25°C to +85°C. This range is validated across all AC and DC specifications including tRC, tRCD, and IDD2P, ensuring reliable functionality in handheld devices exposed to outdoor or uncontrolled thermal environments. The device does not require derating within this span.
Does W987D6HBGX6I support both CAS latency 2 and 3?
Yes, W987D6HBGX6I supports programmable CAS latency of 2 or 3 via the mode register. CL=2 yields tAC=6ns and is usable at lower frequencies; CL=3 delivers tAC=5.4ns and is required for full 166MHz operation. The selection is static after MRS initialization and must match host controller configuration.
How does Automatic Temperature Compensated Self Refresh (ATCSR) function in W987D6HBGX6I?
W987D6HBGX6I integrates an on-die temperature sensor that dynamically adjusts self-refresh current based on junction temperature. At 45°C, full-array IDD6 is 180μA; at 85°C, it rises to 230μA - ensuring data retention without over-provisioning current at cooler temperatures. No external sensor or host intervention is needed.
What is the ball count and package type of W987D6HBGX6I?
W987D6HBGX6I uses a 54-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.5mm pitch and 8mm × 10.5mm body size. This x16-optimized footprint matches JEDEC MO-245 and is distinct from the 90-ball variant used for x32 configurations.
Can W987D6HBGX6I be substituted with W987D6HBGX7I in the same PCB layout?
Yes, W987D6HBGX7I shares identical pinout, package dimensions, voltage requirements, and feature set with W987D6HBGX6I. The only difference is speed grade: −75 supports 133MHz max (tRC=72.5ns) versus −6's 166MHz (tRC=60ns). No PCB changes are required, but timing margins and controller configuration must align with the slower grade.
W987D6HBGX6I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 54-TFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPSDR
- Memory Size:
- 128Mbit
- Memory Organization:
- 8M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 166 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 5.4 ns
- Voltage - Supply:
- 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-VFBGA (8x9)
W987D6HBGX6I FAQ
1.How can I place an order for W987D6HBGX6I through Aetrix?
Please submit a Request for Quotation (RFQ) for W987D6HBGX6I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W987D6HBGX6I reliable?
The price and inventory of W987D6HBGX6I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W987D6HBGX6I is usually 5 days.
3.What payment methods are accepted for W987D6HBGX6I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W987D6HBGX6I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W987D6HBGX6I?
W987D6HBGX6I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W987D6HBGX6I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W987D6HBGX6I?
For technical support, including W987D6HBGX6I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W987D6HBGX6I requirements.
6.How does Aetrix verify that W987D6HBGX6I is sourced from the original manufacturer or authorized distributors?
All W987D6HBGX6I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W987D6HBGX6I meets industry standards.
7.What is the process for return or replacement of W987D6HBGX6I?
All W987D6HBGX6I units undergo pre-shipment inspection (PSI). If there is an issue with W987D6HBGX6I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W987D6HBGX6I part is unused and in its original packaging.
Return procedure for W987D6HBGX6I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W987D6HBGX6I Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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AT24C04C-SSHM-T
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AT24C08C-STUM-T
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