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Winbond Electronics Corporation W987D6HBGX7E
- Part No.:
- W987D6HBGX7E
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 54-TFBGA
- Datasheet:
-
W987D6HBGX7E.pdf
- Description:
- IC DRAM 128MBIT PAR 54VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,223
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Product details
Overview
W987D6HBGX7E from Winbond is a 128Mb mobile low-power SDRAM (LPSDR) organized as 2,097,152 words × 4 banks × 16 bits, operating at 1.8V with LVCMOS interface, CAS latency 2/3, and max clock frequency 166MHz. It delivers burst lengths up to 8 and supports automatic temperature-compensated self-refresh (ATCSR) for battery-powered handheld devices.
For engineers reviewing the W987D6HBGX7E datasheet, W987D6HBGX7E pinout, W987D6HBGX7E application, or W987D6HBGX7E equivalent, key selection criteria include its 54-ball VFBGA x16 package, deep power-down mode (10μA), partial array self-refresh capability, and compatibility with 2.5G/3G mobile baseband processors requiring low-standby-current memory.
Technical Context
This LPSDR implements synchronous command decoding with four independent banks, full support for auto-precharge, and programmable burst modes (1, 2, 4, 8, full-page). Its internal refresh counter executes 4K-cycle/64ms refresh and enables on-die ATCSR with selectable array fractions (full/½/¼).
The device uses multiplexed address pins (A0–A11), dual bank address lines (BA0/BA1), and separate I/O power (VDDQ/VSSQ) to isolate noise-sensitive output drivers. CKE-controlled entry into power-down, deep power-down, and self-refresh modes allows dynamic power management aligned with host processor sleep states.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 128Mb (2,097,152 × 16 × 4 banks) |
| Supply Voltage | 1.7V–1.95V VDD/VDDQ - enables single-rail 1.8V system integration |
| Max Clock Frequency | 166MHz (tCK = 6ns) - supports high-bandwidth data transfers in mobile baseband |
| CAS Latency | CL = 2 or 3 - configurable timing trade-off between access latency and throughput |
| Burst Length | 1, 2, 4, 8, full page - matches varying cache line and framebuffer access patterns |
| Refresh Rate | 4K cycles / 64ms - meets JEDEC JESD21-C requirements for mobile DRAM |
| Deep Power-Down Current | 10μA - extends battery life during extended idle periods in portable devices |
| Package | 54-ball VFBGA (x16), 6.0mm × 8.0mm × 0.8mm - compact footprint for space-constrained PCBs |
Pinout & Package
W987D6HBGX7E uses a 54-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package optimized for mobile applications. Pin assignments follow JEDEC-standard LPSDR x16 ballout with dedicated VDD/VSS and VDDQ/VSSQ power/ground pairs for signal integrity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A11 | Address Input | Multiplexed row/column address inputs; A10 controls auto-precharge enable |
| BA0, BA1 | Bank Address | Selects one of four internal memory banks during activate/read/write operations |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus with programmable drive strength and DQM masking |
| UDQM, LDQM | Data Mask | Controls write masking and read output high-impedance state with zero-latency blocking |
| CLK, CKE | Clock Interface | Synchronous edge-triggered clock input; CKE gates entry into low-power modes |
| CS, RAS, CAS, WE | Command Control | Standard SDRAM command bus defining activate, read, write, precharge, and refresh |
| VDD, VSS | Core Power/Ground | 1.8V supply for logic and address buffers; isolated from I/O domain |
| VDDQ, VSSQ | I/O Power/Ground | Dedicated 1.8V supply for DQ/DQM drivers to minimize switching noise coupling |
Key Features
| Feature | Design Value |
|---|---|
| Automatic Temperature Compensated Self Refresh (ATCSR) | Reduces self-refresh current by up to 30% at 45°C vs. fixed-rate refresh - extends battery runtime in variable-temperature environments |
| Programmable Partial Array Self Refresh (PASR) | Allows refresh of only active memory sub-arrays (full/½/¼), cutting standby current during partial-use scenarios |
| Deep Power Down Mode (DPD) | Enters ultra-low 10μA state with full retention - ideal for long-duration suspend-to-RAM in smartphones |
| LVCMOS-Compatible Interface | Meets 1.8V signaling standards with VIH = 0.8×VDDQ and VOL ≤ 0.2V - ensures interoperability with AP/BB SoCs |
| Configurable Output Drive Strength | Adjusts DQ driver impedance to match PCB trace characteristics - improves signal integrity without external termination |
| Power-Down Mode Entry/Exit | tSB ≤ 7.5ns entry and tXSR = 115ns exit latency - enables rapid power-state transitions synchronized with CPU activity |
Applications
| Smartphone Baseband Memory | Digital Still Camera Buffer |
|---|---|
Use Scenario: Stores intermediate image processing data during burst capture and JPEG encoding in 8MP+ cameras. IC Role / Device Role / Timing Role: Offloads frame buffer and ISP pipeline memory from main SoC; operates in burst-length-8, CL=3 mode synchronized to image sensor clock. Use Value: 166MHz bandwidth sustains >120MB/s write throughput during RAW capture; deep power-down cuts idle current to 10μA between shots. |
Use Scenario: Holds preview frames and compressed image buffers in compact digital cameras with limited board area. IC Role / Device Role / Timing Role: Acts as shared system memory for ARM9-based imaging controller; uses PASR to refresh only active preview region during LCD display. Use Value: 54-ball VFBGA fits 10mm² footprint; ATCSR maintains refresh accuracy across −25°C to +85°C ambient range during outdoor use. |
| Mobile Gaming Console RAM | PDA Application Memory |
Use Scenario: Provides working memory for 2D/3D game assets and rendering buffers in handheld gaming systems. IC Role / Device Role / Timing Role: Serves as primary RAM for media processor; leverages auto-precharge and interleaved bank access to hide latency during texture streaming. Use Value: tRRD = 12ns and tCCD = 1 cycle enable efficient bank rotation; CL=2 mode reduces frame-buffer read latency by 1.2ns vs. CL=3. |
Use Scenario: Hosts OS kernel, application code, and user data in legacy PDAs with ARM7/ARM9 CPUs. IC Role / Device Role / Timing Role: Functions as main system memory; initialized via standard SDRAM MRS sequence with burst length = 4 and sequential addressing. Use Value: Industrial temp grade (−40°C to +85°C) ensures reliability in uncontrolled environments; tRP = 18ns supports fast context switching between PIM and media apps. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power mobile SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS42S16100H-6BLI | Same 128Mb x16 density, 166MHz, but lacks ATCSR and PASR; uses 66-ball FBGA | Requires external thermal compensation for refresh; no partial-array control for fine-grained power tuning | Choose when ATCSR/PASR not required and board layout accommodates larger package |
| Micron MT48LC16M16A2P-6A:G | Legacy 128Mb LP-SDRAM with identical pinout but higher 2.5V VDD; no deep power-down mode | Higher voltage incompatible with 1.8V-only designs; 100μA standby vs. W987D6HBGX7E's 0.23mA power-down | Only suitable for voltage-flexible systems needing drop-in replacement without firmware changes |
Compared with IS42S16100H-6BLI and MT48LC16M16A2P-6A:G, W987D6HBGX7E uniquely combines ATCSR, PASR, and 10μA deep power-down in a 54-ball 1.8V package - delivering superior energy efficiency for battery-critical mobile endpoints where thermal variation and standby duration are design constraints.
Availability
W987D6HBGX7E is available at Aetrix Electronics and suitable for smartphone baseband subsystems, digital still camera image buffers, and handheld gaming console RAM requiring stable component supply, industrial temperature support, and long-term lifecycle continuity.
Supply support for W987D6HBGX7E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory, flash, and logic ICs, with over 30 years of DRAM design heritage.
W987D6HBGX7E belongs to Winbond's Mobile LPSDR product line, engineered specifically for battery-operated handheld devices demanding ultra-low standby current, thermal-aware refresh, and compact packaging.
FAQ
What is the operating voltage range for W987D6HBGX7E?
W987D6HBGX7E operates with VDD and VDDQ both specified from 1.7V to 1.95V, with typical operation at 1.8V. This tight 1.8V ±0.15V tolerance ensures compatibility with modern mobile SoC I/O domains and eliminates need for level-shifting circuitry. The device requires simultaneous ramp-up of VDD and VDDQ during power-on, per the documented initialization sequence.
Does W987D6HBGX7E support CAS latency 2 and 3?
Yes, W987D6HBGX7E supports configurable CAS latency of 2 or 3, set via the Mode Register during initialization. CL=2 reduces read access time to 6ns (tAC) at 166MHz, while CL=3 provides margin for timing closure in noisy layouts. Both settings are fully validated across the industrial temperature range (−40°C to +85°C) and require corresponding tRCD = 18ns setup.
How does Automatic Temperature Compensated Self Refresh (ATCSR) function in W987D6HBGX7E?
W987D6HBGX7E implements on-die ATCSR that dynamically adjusts self-refresh interval based on die temperature - reducing refresh rate at lower temperatures to cut IDD6 current. At 45°C, full-array ATCSR draws 180μA (low-power mode); at 85°C, it increases to 230μA. This feature is enabled by default after power-up and requires no host intervention.
What package type and dimensions does W987D6HBGX7E use?
W987D6HBGX7E uses a 54-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 6.0mm × 8.0mm × 0.8mm with 0.5mm ball pitch. This x16-organized package follows JEDEC MO-244AC standard and is distinct from the 90-ball variant used for x32 configurations. The ball map includes dedicated VDDQ/VSSQ pairs for I/O noise isolation.
Can W987D6HBGX7E be used in industrial temperature applications?
Yes, W987D6HBGX7E is qualified for industrial temperature operation from −40°C to +85°C, as confirmed in the "Operating Temperature Range" section of its datasheet. All DC and AC specifications - including tRC = 60ns, tRAS = 42ns, and IDD2P = 0.23mA - are guaranteed across this full range, making it suitable for automotive infotainment displays and ruggedized PDAs.
W987D6HBGX7E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 54-TFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPSDR
- Memory Size:
- 128Mbit
- Memory Organization:
- 8M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 5.4 ns
- Voltage - Supply:
- 1.7V ~ 1.95V
- Operating Temperature:
- -25°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-VFBGA (8x9)
W987D6HBGX7E FAQ
1.How can I place an order for W987D6HBGX7E through Aetrix?
Please submit a Request for Quotation (RFQ) for W987D6HBGX7E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W987D6HBGX7E reliable?
The price and inventory of W987D6HBGX7E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W987D6HBGX7E is usually 5 days.
3.What payment methods are accepted for W987D6HBGX7E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W987D6HBGX7E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W987D6HBGX7E?
W987D6HBGX7E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W987D6HBGX7E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W987D6HBGX7E?
For technical support, including W987D6HBGX7E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W987D6HBGX7E requirements.
6.How does Aetrix verify that W987D6HBGX7E is sourced from the original manufacturer or authorized distributors?
All W987D6HBGX7E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W987D6HBGX7E meets industry standards.
7.What is the process for return or replacement of W987D6HBGX7E?
All W987D6HBGX7E units undergo pre-shipment inspection (PSI). If there is an issue with W987D6HBGX7E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W987D6HBGX7E part is unused and in its original packaging.
Return procedure for W987D6HBGX7E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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