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Winbond Electronics Corporation W988D2FBJX6E
- Part No.:
- W988D2FBJX6E
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 90-TFBGA
- Datasheet:
-
W988D2FBJX6E.pdf
- Description:
- IC DRAM 256MBIT PAR 90VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,153
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Product details
Overview
W988D2FBJX6E from Winbond is a 256Mb low-power synchronous DRAM (LPSDR) with x32 I/O width, 166MHz clock rate, 1.8V VDD/VDDQ supply, and 90-ball VFBGA package. It implements Partial Array Self Refresh (PASR), Automatic Temperature Compensated Self Refresh (ATCSR), and Deep Power Down mode for battery-powered mobile applications including 3G/4G handsets and digital cameras.
For engineers reviewing the W988D2FBJX6E datasheet, W988D2FBJX6E pinout, W988D2FBJX6E application, or W988D2FBJX6E equivalent, key selection considerations include its 32-bit bus interface, -25°C to +85°C extended temperature grade, programmable burst length (1–8, full page), CAS latency of 2 or 3, and support for LVCMOS-compatible 1.8V signaling with separate VDDQ/VSSQ rails.
Technical Context
This LPSDR operates in fully synchronous mode with all inputs sampled on the rising edge of CLK. Its command decoder interprets CS, RAS, CAS, and WE combinations to execute bank activate, precharge, read, write, auto-refresh, self-refresh entry/exit, power-down, and deep power-down operations.
The device integrates four independent banks, each with row/column decoders, sense amplifiers, and a shared refresh counter. Addressing uses multiplexed A[0:11] for rows and A[0:8] for columns in x32 configuration, with BA0/BA1 selecting active banks and A10 controlling auto-precharge functionality.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 256Mb (4 banks × 2,097,152 words × 32 bits) |
| Clock Frequency | 166MHz - supports 332MB/s peak data rate in burst mode |
| Supply Voltage | VDD = VDDQ = 1.8V ± 0.15V - enables direct interfacing with 1.8V SoC I/O domains |
| CAS Latency | CL = 2 or 3 - determines minimum read access latency in clock cycles |
| Burst Length | Programmable: 1, 2, 4, 8, or full-page - balances bandwidth efficiency and memory controller flexibility |
| Refresh Cycle | 64ms - standard JEDEC-compliant interval for maintaining data integrity |
| Operating Temp | -25°C to +85°C - qualified for extended-temperature consumer and industrial handheld use |
| Package | 90-ball VFBGA (6.0mm × 8.0mm × 0.55mm) - compact footprint for space-constrained mobile PCBs |
Pinout & Package
W988D2FBJX6E uses a 90-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.5mm pitch, optimized for low-inductance, high-density mobile layouts. Pin assignments follow JEDEC-standard LPSDR x32 ballout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | System Clock Input | Synchronizes all command, address, and data transfers on rising edge; requires matched trace length for timing closure |
| CKE | Clock Enable | Low disables internal clocking to enter power-down, self-refresh, or deep power-down states |
| /CS, /RAS, /CAS, /WE | Command Control | Active-low signals decoded together to determine operation (e.g., /RAS+/CAS+/WE=H/L/H → Read) |
| BA0, BA1 | Bank Address | Selects one of four internal banks during activate, read, or write commands |
| A[0:11] | Multiplexed Address | Row address (A0–A11) latched on ACT; column address (A0–A8) latched on READ/WRIT |
| DQM0–DQM3 | Data Mask | Per-byte write mask (x32); high blocks write or forces Hi-Z output with 2-cycle latency in CL=2/3 reads |
| DQ0–DQ31 | Data I/O | Bidirectional 32-bit data bus; uses separate VDDQ/VSSQ for noise isolation and signal integrity |
| VDD, VDDQ | Power Rails | VDD powers core logic; VDDQ powers I/O buffers - decoupling required per JEDEC spec |
| VSS, VSSQ | Ground Rails | Separate ground planes for core and I/O reduce switching noise coupling into sensitive analog paths |
Key Features
| Feature | Design Value |
|---|---|
| Deep Power Down Mode | Reduces standby current to ≤1μA - extends battery life in always-on mobile standby states |
| Automatic Temperature Compensated Self Refresh (ATCSR) | Adjusts self-refresh rate based on die temperature - maintains data retention while minimizing power at low temp |
| Partial Array Self Refresh (PASR) | Refreshes only selected banks - cuts self-refresh power by up to 50% when full memory array not needed |
| Programmable Output Driver Strength | Configurable via EMRS - allows tuning for signal integrity across varying trace lengths and loads |
| LVCMOS 1.8V Interface | Fully compliant with JEDEC JESD8-15A - ensures interoperability with 1.8V application processors and baseband ICs |
Applications
| Smartphone Baseband Memory | Digital Still Camera Buffer |
|---|---|
Use Scenario: Stores frame buffers and image processing metadata in dual-SIM 4G smartphones with limited PCB area and thermal budget. IC Role / Device Role / Timing Role: Low-power x32 SDRAM serving as primary working memory for baseband processor during call setup, packet buffering, and modem firmware execution. Use Value: Deep Power Down mode reduces idle current to <1μA, extending standby time without compromising burst bandwidth during data sessions. | Use Scenario: Captures and buffers high-resolution JPEG/RAW frames during rapid burst shooting in compact digital cameras. IC Role / Device Role / Timing Role: High-speed 166MHz LPSDR providing temporary storage for sensor data before compression and storage to flash. Use Value: CAS latency of 2/3 and burst length up to 8 enable sustained 332MB/s read/write throughput needed for real-time RAW capture at 10fps. |
| Portable Gaming Console RAM | Industrial Handheld Terminal Memory |
Use Scenario: Serves as main system memory in ARM-based portable game consoles requiring fast load times and smooth UI rendering. IC Role / Device Role / Timing Role: x32 LPSDR delivering low-latency access to game assets, textures, and runtime code under dynamic power constraints. Use Value: Programmable output driver strength and separate VDDQ/VSSQ rails maintain signal integrity across variable board stackups and EMI environments. | Use Scenario: Provides reliable working memory in ruggedized barcode scanners and field service terminals operating in warehouses and outdoor environments. IC Role / Device Role / Timing Role: Extended-temperature (-25°C to +85°C) LPSDR supporting continuous operation in uncontrolled ambient conditions. Use Value: ATCSR and PASR features reduce average power consumption by ~35% compared to standard SDRAM, enabling longer battery life in duty-cycled scanning applications. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power mobile SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS42S32400F-6BLI | Same 256Mb x32 density, 166MHz, 1.8V, but uses 84-ball BGA and lacks Deep Power Down mode | Higher standby current (~50μA vs. <1μA) limits suitability for ultra-low-power always-on devices | Choose W988D2FBJX6E when sub-μA deep sleep is mandatory; select IS42S32400F-6BLI if board space allows larger package and DPD is unnecessary |
| Winbond W988D2FBJX7E | Identical package and pinout, but rated for 133MHz max frequency and same -25°C to +85°C range | Lower bandwidth (266MB/s vs. 332MB/s) and reduced timing margin for high-speed controllers | Use W988D2FBJX7E only when system clock is capped at 133MHz or cost optimization outweighs performance headroom |
Compared with IS42S32400F-6BLI and W988D2FBJX7E, W988D2FBJX6E uniquely delivers 166MHz operation with Deep Power Down and ATCSR in a 90-ball VFBGA - making it optimal for next-generation battery-constrained mobile designs demanding both speed and ultra-low quiescent power.
Availability
W988D2FBJX6E is available at Aetrix Electronics and suitable for smartphone baseband subsystems, digital camera image buffers, portable gaming console memory, industrial handheld terminals, and medical point-of-care devices requiring stable component supply across long production lifecycles.
Supply support for W988D2FBJX6E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory, flash, and logic solutions for consumer, industrial, and automotive markets.
W988D2FBJX6E belongs to Winbond's Low Power SDRAM product line, engineered specifically for battery-operated mobile devices where memory density, 1.8V compatibility, and multi-level power management (DPD, PASR, ATCSR) are critical design requirements.
FAQ
What is the maximum clock frequency supported by W988D2FBJX6E?
W988D2FBJX6E supports a maximum clock frequency of 166MHz, corresponding to a -6 speed grade. This enables a peak data transfer rate of 332MB/s in burst mode with x32 bus width. The device meets all AC timing specifications at this frequency under 1.8V supply and -25°C to +85°C operating conditions as defined in the official Winbond datasheet revision A01-006.
Does W988D2FBJX6E support Deep Power Down mode?
Yes, W988D2FBJX6E supports Deep Power Down (DPD) mode, which reduces standby current to ≤1μA. Entry is initiated via the DPD command with CKE low, and exit requires a specific reset sequence including CKE high and a delay before issuing commands. This feature is explicitly documented in Section 2 (Features) and Section 7.1.20 of the W988D6FB/W988D2FB datasheet.
What package type and ball count does W988D2FBJX6E use?
W988D2FBJX6E uses a 90-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 6.0mm × 8.0mm × 0.55mm with 0.5mm ball pitch. This matches the "LPSDR x32" ball assignment shown in Section 4.2 of the datasheet and is distinct from the 54-ball VFBGA used for x16 variants like W988D6FBGX6E.
How does Automatic Temperature Compensated Self Refresh (ATCSR) function in W988D2FBJX6E?
ATCSR in W988D2FBJX6E dynamically adjusts the self-refresh interval based on on-die temperature measurements. As temperature decreases, refresh rate slows - reducing power consumption without compromising data retention. This feature is enabled by default and requires no external control; it is detailed in Section 2 (Features) and Section 9.5 of the datasheet.
Is W988D2FBJX6E pin-compatible with other Winbond LPSDR parts such as W988D2FBJX7E?
Yes, W988D2FBJX6E is pin-compatible with W988D2FBJX7E - both use identical 90-ball VFBGA packaging and share the same ball assignment, signal definitions, and electrical interface. The only differences are speed grade (166MHz vs. 133MHz) and associated AC timing parameters; no PCB layout change is required when substituting between these two variants.
W988D2FBJX6E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 90-TFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPSDR
- Memory Size:
- 256Mbit
- Memory Organization:
- 8M x 32
- Memory Interface:
- Parallel
- Clock Frequency:
- 166 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 5.4 ns
- Voltage - Supply:
- 1.7V ~ 1.95V
- Operating Temperature:
- -25°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 90-VFBGA (8x13)
W988D2FBJX6E FAQ
1.How can I place an order for W988D2FBJX6E through Aetrix?
Please submit a Request for Quotation (RFQ) for W988D2FBJX6E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W988D2FBJX6E reliable?
The price and inventory of W988D2FBJX6E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W988D2FBJX6E is usually 5 days.
3.What payment methods are accepted for W988D2FBJX6E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W988D2FBJX6E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W988D2FBJX6E?
W988D2FBJX6E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W988D2FBJX6E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W988D2FBJX6E?
For technical support, including W988D2FBJX6E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W988D2FBJX6E requirements.
6.How does Aetrix verify that W988D2FBJX6E is sourced from the original manufacturer or authorized distributors?
All W988D2FBJX6E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W988D2FBJX6E meets industry standards.
7.What is the process for return or replacement of W988D2FBJX6E?
All W988D2FBJX6E units undergo pre-shipment inspection (PSI). If there is an issue with W988D2FBJX6E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W988D2FBJX6E part is unused and in its original packaging.
Return procedure for W988D2FBJX6E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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