Winbond Electronics Corporation W988D2FBJX6E TR

Overview

W988D2FBJX6E TR from Winbond is a 256Mb low-power synchronous DRAM (LPSDR) with x32 I/O width, 166MHz clock rate, 1.8V supply, and 90-ball VFBGA package. It implements Partial Array Self Refresh (PASR), Automatic Temperature Compensated Self Refresh (ATCSR), and Deep Power Down Mode for battery-constrained mobile applications including 3G/4G handsets and digital still cameras.

For engineers reviewing the W988D2FBJX6E TR datasheet, W988D2FBJX6E TR pinout, W988D2FBJX6E TR application, or W988D2FBJX6E TR equivalent, key selection criteria include burst length programmability (1/2/4/8/full page), CAS latency options (CL=2 or CL=3), LVCMOS 1.8V interface compliance, and industrial-grade temperature range (-25°C to +85°C).

Technical Context

This LPSDR operates in fully synchronous mode with data output aligned to positive clock edges. Its command decoder interprets RAS/CAS/WE combinations to execute bank activate, precharge, read, write, auto-refresh, self-refresh entry/exit, and deep power down commands - all governed by strict timing parameters including tRCD = 20ns, tRP = 20ns, and tRFC = 127.5ns at 166MHz.

The device integrates four independent banks, each with row/column decoders, sense amplifiers, and a refresh counter. Addressing uses multiplexed A[0:11] for rows and A[0:8] for columns in x32 configuration, with BA0/BA1 selecting active banks and A10 controlling auto-precharge enable.

Key Specifications

Pinout & Package

W988D2FBJX6E TR uses a 90-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.5mm ball pitch. Signal balls are arranged in a 10×9 grid with dedicated VDD, VDDQ, VSS, and VSSQ power/ground planes for noise isolation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power mobile SDRAM applications.

Compared with W988D2FBJX6E TR, W988D2FBJX7E trades 33MT/s bandwidth for marginally lower power at lower frequencies, while IS42S32400F-6BLI provides broader temperature tolerance at the expense of advanced low-power features essential for battery longevity.

Availability

W988D2FBJX6E TR is available at Aetrix Electronics and suitable for smartphone baseband subsystems, digital camera image buffers, portable gaming console memory, and industrial handheld terminal designs requiring stable component supply across multi-year production cycles.

Supply support for W988D2FBJX6E TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory and microcontrollers, with over 30 years of DRAM design heritage and ISO/TS 16949-certified manufacturing.

The W988D2FB series targets mobile and portable electronics, delivering low-voltage, low-power SDRAM optimized for battery life, thermal efficiency, and space-constrained PCB layouts in consumer handheld devices.

FAQ

What is the maximum operating frequency of the W988D2FBJX6E TR?

The W988D2FBJX6E TR is rated for a maximum clock frequency of 166MHz, enabling a data transfer rate of 333MT/s. This specification is validated under VDD/VDDQ = 1.8V ± 0.15V and operating temperature of -25°C to +85°C, with timing parameters including tAC = 5.4ns and tRC = 55ns per JEDEC-compliant AC characterization.

Does the W988D2FBJX6E TR support automatic temperature-compensated self-refresh?

Yes, the W988D2FBJX6E TR implements Automatic Temperature Compensated Self Refresh (ATCSR), which dynamically adjusts the self-refresh interval based on internal die temperature. This feature ensures data retention across the full -25°C to +85°C operating range while minimizing average current draw compared to fixed-interval self-refresh.

What package type and dimensions does the W988D2FBJX6E TR use?

The W988D2FBJX6E TR uses a 90-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 5.0mm × 8.0mm × 0.65mm with 0.5mm ball pitch. This footprint matches JEDEC MO-245AA and supports standard reflow soldering profiles for high-density mobile PCB assembly.

Can the W988D2FBJX6E TR operate with CAS latency of 2?

Yes, the W988D2FBJX6E TR supports programmable CAS latency of either 2 or 3 clock cycles via the Mode Register Set (MRS) command. CL=2 mode reduces read access latency but requires stricter timing margins on tRCD and tRP, and is validated at 166MHz per the official Winbond datasheet revision A01-006.

What is the function of the DQM0–DQM3 pins on the W988D2FBJX6E TR?

The DQM0–DQM3 pins on the W988D2FBJX6E TR serve as data mask inputs: during writes, asserting DQM high blocks corresponding byte lanes; during reads, it places the associated DQ outputs in high-impedance state after 2-cycle latency. This enables precise byte-level control without requiring full bus turnaround.