Winbond Electronics Corporation W988D2FBJX6I TR

Overview

W988D2FBJX6I from Winbond is a 256Mb low-power synchronous DRAM (LPSDR) with x32 I/O width, 166MHz clock rate, 1.8V supply, and industrial temperature range (−40°C to +85°C). It implements Partial Array Self Refresh (PASR), Automatic Temperature Compensated Self Refresh (ATCSR), and Deep Power Down Mode for battery-constrained mobile applications including 3G/4G handsets and digital still cameras.

For engineers reviewing the W988D2FBJX6I datasheet, W988D2FBJX6I pinout, W988D2FBJX6I application, or W988D2FBJX6I equivalent, key selection criteria include its 90-ball VFBGA package, CAS latency options (CL=2/3), burst length configurability (1–8, full page), LVCMOS interface compliance, and support for power-down entry/exit timing critical to portable SoC memory subsystems.

Technical Context

This LPSDR operates fully synchronously with system clock edges, delivering data at up to 166MHz while maintaining strict tRCD (20ns), tRP (20ns), and tRFC (127.5ns) timing across −40°C to +85°C. Its four-bank architecture supports interleaved read/write operations and auto-precharge command execution to minimize row activation overhead.

The device uses multiplexed address inputs (A0–A11 for rows, A0–A8 for columns), dual bank address pins (BA0/BA1), and four independent DQM signals (DQM0–DQM3) for per-byte write masking. Command decoding relies on CS, RAS, CAS, and WE sampled on CLK rising edges, with CKE enabling/disabling clock domain entry into Power Down, Self Refresh, or Deep Power Down states.

Key Specifications

Pinout & Package

W988D2FBJX6I uses a 90-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 10.5mm × 13.0mm × 0.8mm, optimized for mobile PCB stacking and thermal dissipation in thin-profile devices.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power mobile SDRAM applications.

Compared with W988D2FBJX7E, W988D2FBJX6I delivers higher bandwidth and wider temperature tolerance; compared with IS42S32800J-6BLI, it provides superior power management for battery longevity but requires VFBGA assembly capability.

Availability

W988D2FBJX6I is available at Aetrix Electronics and suitable for smartphone baseband memory, digital still camera buffers, industrial handheld terminals, and 3G/4G feature phone application memory requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W988D2FBJX6I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM for mobile and embedded markets.

W988D2FBJX6I belongs to Winbond's LPSDR product line, engineered specifically for battery-powered portable electronics where memory density, bandwidth, and ultra-low standby power must coexist within tight thermal and physical constraints.

FAQ

What is the maximum operating frequency of the W988D2FBJX6I?

The W988D2FBJX6I is rated for a maximum clock frequency of 166MHz, corresponding to the −6 speed grade. This enables peak data transfer rates of 332MB/s in x32 configuration with burst length 8 and CAS latency 3. Timing parameters such as tAC (access time) and tRCD (row-to-column delay) are guaranteed at this frequency across the full −40°C to +85°C industrial temperature range.

Does the W988D2FBJX6I support automatic temperature-compensated self-refresh?

Yes, the W988D2FBJX6I implements Automatic Temperature Compensated Self Refresh (ATCSR), which dynamically adjusts the self-refresh interval based on die temperature. This feature reduces refresh current by up to 50% at lower temperatures while maintaining data retention at maximum junction temperature, directly improving battery life in portable devices.

What package type and ball count does the W988D2FBJX6I use?

The W988D2FBJX6I uses a 90-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with dimensions 10.5mm × 13.0mm × 0.8mm. This compact, low-profile package supports high-density mobile PCB layouts and meets IPC/JEDEC standards for fine-pitch BGA assembly and reflow profiles.

Can the W988D2FBJX6I operate with CAS latency set to 2?

Yes, the W988D2FBJX6I supports programmable CAS latency of either 2 or 3, configured via the Mode Register Set (MRS) command. CL=2 reduces read access latency by one clock cycle versus CL=3, beneficial in latency-critical real-time subsystems-provided timing margins (e.g., tRCD, tRP) remain satisfied at the target frequency and voltage.

What power-saving modes are available on the W988D2FBJX6I?

The W988D2FBJX6I offers three distinct low-power states: Power Down Mode (reduced current with clocks gated), Self Refresh Mode (autonomous refresh with clocks stopped), and Deep Power Down Mode (≤1µA standby current with internal state retention). Entry and exit are controlled exclusively via CKE and command sequences defined in the datasheet.