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Winbond Electronics Corporation W988D2FBJX7E TR
- Part No.:
- W988D2FBJX7E TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 90-TFBGA
- Datasheet:
-
W988D2FBJX7E TR.pdf
- Description:
- IC DRAM 256MBIT PAR 90VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,262
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Product details
Overview
W988D2FBJX7E TR from Winbond is a 256Mb low-power synchronous DRAM (LPSDR) with x32 I/O width, 133MHz maximum clock frequency, 1.8V VDD/VDDQ supply, and 90-ball VFBGA package. It implements Partial Array Self Refresh (PASR), Automatic Temperature Compensated Self Refresh (ATCSR), and Deep Power Down Mode for battery-powered mobile applications including 3G/4G handsets and digital cameras.
For engineers reviewing the W988D2FBJX7E TR datasheet, W988D2FBJX7E TR pinout, W988D2FBJX7E TR application, or W988D2FBJX7E TR equivalent, key selection criteria include burst length programmability (1/2/4/8/full page), CAS latency options (CL=2 or CL=3), 4-bank architecture with BA0/BA1 addressing, and support for auto-precharge, power-down, and deep power-down modes in industrial temperature range (–25°C to +85°C).
Technical Context
This LPSDR operates fully synchronously with system clock edges, delivering data at up to 133MHz with tCK = 7.5ns. Its command decoder interprets RAS/CAS/WE combinations under CKE control to execute bank activate, precharge, read, write, MRS/EMRS, self-refresh entry/exit, and deep power-down entry/exit sequences.
The device uses multiplexed address pins (A0–A11 for row, A0–A8 for column in x32 mode), dual bank address lines (BA0, BA1), and four independent DQM signals (DQM0–DQM3) for per-byte write masking and output disable. Internal refresh counter and mode register enable dynamic configuration of burst length, CAS latency, and PASR settings.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 256Mb (4,194,304 words × 4 banks × 32 bits) |
| Max Clock Frequency | 133MHz - supports tCK = 7.5ns timing for high-throughput mobile memory access |
| Supply Voltage | VDD/VDDQ = 1.8V ±0.15V - compatible with 1.8V LVCMOS interface and low-power SoC domains |
| CAS Latency | Programmable CL=2 or CL=3 - determines read data valid delay relative to clock edge |
| Burst Length | 1, 2, 4, 8, or full-page - configurable via mode register for optimal bandwidth vs. latency trade-off |
| Refresh Cycle | 64ms - standard JEDEC-compliant refresh interval ensuring data retention |
| Operating Temp | –25°C to +85°C - qualified for extended-temperature consumer and industrial handheld use |
Pinout & Package
W988D2FBJX7E TR uses a 90-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.5mm pitch, optimized for space-constrained mobile PCB layouts. Pin assignments follow JEDEC-standard LPSDR x32 ballout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | System Clock Input | Synchronizes all command, address, and data transfers on rising edge |
| CKE | Clock Enable | Controls entry/exit from power-down, self-refresh, and deep power-down modes |
| /CS | Chip Select | Enables command decoder; deassertion ignores new commands while preserving internal state |
| /RAS, /CAS, /WE | Command Strobes | Define operation type (activate, precharge, read, write, MRS) when sampled with CLK |
| BA0, BA1 | Bank Address | Selects one of four internal banks during row/column address latching |
| A0–A11 | Multiplexed Address | Carry row address (A0–A11) and column address (A0–A8) in time-multiplexed fashion |
| DQ0–DQ31 | Data I/O | 32-bit bidirectional data bus supporting burst reads/writes with DQM0–DQM3 masking |
| DQM0–DQM3 | Data Mask | Per-byte write mask and output disable control with zero-latency blocking in write cycles |
| VDD, VDDQ | Power Supplies | VDD powers core logic; VDDQ powers I/O buffers separately to reduce switching noise |
| VSS, VSSQ | GND Planes | VSS for core logic; VSSQ for I/O buffers - split grounds improve signal integrity |
Key Features
| Feature | Design Value |
|---|---|
| Deep Power Down Mode (DPD) | Reduces standby current to ≤1μA - extends battery life in always-on mobile devices |
| Automatic Temperature Compensated Self Refresh (ATCSR) | Adjusts self-refresh rate based on die temperature - maintains data retention while minimizing power |
| Partial Array Self Refresh (PASR) | Allows refresh of only active memory sub-arrays - cuts self-refresh power by up to 50% vs. full-array refresh |
| Programmable Output Driver Strength | Configurable drive strength per DQ group - optimizes signal integrity across varying trace lengths and loads |
| LVCMOS-Compatible Interface | 1.8V signaling with defined VIH/VIL thresholds - ensures interoperability with modern application processors |
Applications
| Smartphone Baseband Memory | Digital Still Camera Buffer |
|---|---|
Use Scenario: Stores frame buffers and image processing metadata in mid-tier 3G/4G smartphones with constrained thermal envelope and battery capacity. IC Role / Device Role / Timing Role: Primary working memory interfaced directly to baseband processor's memory controller; operates in burst mode with CL=3 and auto-precharge enabled. Use Value: Deep Power Down Mode reduces idle current to <1μA, extending standby time by >30% versus standard SDRAM in same footprint. | Use Scenario: Buffers high-resolution JPEG capture bursts and real-time preview frames in compact digital cameras with flash-based storage. IC Role / Device Role / Timing Role: High-bandwidth temporary storage for sensor pipeline and JPEG encoder; configured for BL=8, CL=2 for lowest read latency. Use Value: PASR enables selective refresh of only active image buffer regions, cutting self-refresh power by 42% during preview mode. |
| Portable Gaming Console RAM | Industrial Handheld Terminal Memory |
Use Scenario: Provides main system memory for ARM-based portable game consoles requiring fast load times and smooth UI rendering. IC Role / Device Role / Timing Role: Shared memory resource for CPU and GPU; uses interleaved bank access and burst-length-4 reads to sustain >1.6GB/s throughput. Use Value: 90-ball VFBGA package allows dense PCB layout with minimal board area; supports –25°C to +85°C operation without derating. | Use Scenario: Serves as application memory in ruggedized industrial handhelds used in warehouse logistics and field service. IC Role / Device Role / Timing Role: Non-volatile buffer for barcode scanning, RFID reading, and wireless data upload; relies on ATCSR for stable retention across ambient temperature swings. Use Value: ATCSR maintains data integrity across –25°C to +85°C without external thermal sensors or firmware calibration overhead. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power mobile SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| W988D2FBJX6E | Same 256Mb x32 LPSDR, but rated for 166MHz max clock (tCK = 6.0ns) and identical –25°C to +85°C temp range | Higher bandwidth requirement; suitable where system clock exceeds 133MHz | Select W988D2FBJX6E if design targets ≥140MHz memory bus speed; otherwise W988D2FBJX7E TR offers better power efficiency at 133MHz |
| MT46H256M32LF-6 IT:C | 256Mb x32 LPDDR1 from Micron; 1.8V, 166MHz, 90-ball VFBGA, but requires different command protocol and lacks PASR/DPD | LPDDR1 interface compatibility required; no native support for deep power down or partial array refresh | Choose MT46H256M32LF-6 IT:C only when migrating from existing LPDDR1 platform; W988D2FBJX7E TR provides superior low-power features for new designs |
Compared with W988D2FBJX6E, the W988D2FBJX7E TR trades 33MHz bandwidth for lower active and standby power; versus MT46H256M32LF-6 IT:C, it delivers deeper power-state control and simpler JEDEC SDR command compatibility at the cost of LPDDR1-specific optimizations.
Availability
W988D2FBJX7E TR is available at Aetrix Electronics and suitable for smartphone baseband subsystems, digital camera image buffers, portable gaming console memory, and industrial handheld terminals requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W988D2FBJX7E TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in memory ICs, flash memory, and logic devices, with global distribution and automotive-grade qualification capabilities.
The W988D2FB series belongs to Winbond's Low Power SDRAM product line, designed specifically for battery-operated mobile and portable electronics where memory density, power efficiency, and thermal robustness are critical.
FAQ
What is the maximum operating frequency supported by the W988D2FBJX7E TR?
The W988D2FBJX7E TR supports a maximum clock frequency of 133MHz, corresponding to a clock period (tCK) of 7.5ns. This rating is validated across the full operating temperature range of –25°C to +85°C and under nominal 1.8V supply conditions. The device is not rated for 166MHz operation - that speed grade applies only to the W988D2FBJX6x variants.
Does the W988D2FBJX7E TR support Deep Power Down Mode, and what is its typical current draw?
Yes, the W988D2FBJX7E TR supports Deep Power Down Mode (DPD), entered via the DPD command with CKE low. In this state, typical standby current is ≤1μA at +25°C, enabling ultra-low-power retention for extended periods in battery-critical applications such as smartphone standby or digital camera sleep mode.
How many banks does the W988D2FBJX7E TR have, and how are they selected?
The W988D2FBJX7E TR contains four internal memory banks, selected using the BA0 and BA1 input pins. These bank address signals are sampled concurrently with /RAS, /CAS, and /WE to determine which bank executes activate, precharge, read, or write commands - enabling true interleaved access and improved effective bandwidth.
What burst lengths are supported by the W988D2FBJX7E TR, and how are they configured?
The W988D2FBJX7E TR supports burst lengths of 1, 2, 4, 8, and full-page, configured via the Burst Length field (A2–A0) in the Mode Register Set (MRS) command. Burst type is fixed as sequential; interleaved burst is not supported. Configuration occurs during initialization and remains static until reprogrammed.
Is the W988D2FBJX7E TR pin-compatible with other members of the W988D2FB family?
Yes, all W988D2FBJXxx variants share identical 90-ball VFBGA packaging and pinout, including W988D2FBJX6E, W988D2FBJX6I, W988D2FBJX7G, and W988D2FBJX7I. Differences are limited to speed grade (133MHz vs. 166MHz), temperature range (–25°C/+85°C vs. –40°C/+85°C), and power option flags - enabling drop-in replacement within same speed/temp bin.
W988D2FBJX7E TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 90-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPSDR
- Memory Size:
- 256Mbit
- Memory Organization:
- 8M x 32
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 5.4 ns
- Voltage - Supply:
- 1.7V ~ 1.95V
- Operating Temperature:
- -25°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 90-VFBGA (8x13)
W988D2FBJX7E TR FAQ
1.How can I place an order for W988D2FBJX7E TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W988D2FBJX7E TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W988D2FBJX7E TR reliable?
The price and inventory of W988D2FBJX7E TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W988D2FBJX7E TR is usually 5 days.
3.What payment methods are accepted for W988D2FBJX7E TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W988D2FBJX7E TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W988D2FBJX7E TR?
W988D2FBJX7E TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W988D2FBJX7E TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W988D2FBJX7E TR?
For technical support, including W988D2FBJX7E TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W988D2FBJX7E TR requirements.
6.How does Aetrix verify that W988D2FBJX7E TR is sourced from the original manufacturer or authorized distributors?
All W988D2FBJX7E TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W988D2FBJX7E TR meets industry standards.
7.What is the process for return or replacement of W988D2FBJX7E TR?
All W988D2FBJX7E TR units undergo pre-shipment inspection (PSI). If there is an issue with W988D2FBJX7E TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W988D2FBJX7E TR part is unused and in its original packaging.
Return procedure for W988D2FBJX7E TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W988D2FBJX7E TR Tags
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M24C02-WMN6TP
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