Winbond Electronics Corporation W988D6FBGX6E

Overview

W988D6FBGX6E from Winbond is a 256Mb low-power synchronous DRAM (LPSDR) with x16 I/O configuration, 1.8V supply, 166MHz clock rate, and 4-bank architecture. It delivers burst data at up to 166MHz with CAS Latency 2 or 3, supports Partial Array Self Refresh (PASR), and targets battery-powered mobile applications including 2.5G/3G handsets and digital still cameras.

For engineers reviewing the W988D6FBGX6E datasheet, W988D6FBGX6E pinout, W988D6FBGX6E application, or W988D6FBGX6E equivalent, key selection factors include its 54-ball VFBGA package, -25°C to +85°C extended temperature range, LVCMOS-compatible 1.8V interface, and support for Deep Power Down (DPD) and Automatic Temperature Compensated Self Refresh (ATCSR).

Technical Context

This LPSDR implements a fully synchronous interface synchronized to CLK rising edges, with command decoding controlled by CS, RAS, CAS, and WE. Its four independent banks enable interleaved access, and row/column addressing uses multiplexed A[0:12] with BA0/BA1 for bank selection and A10 for Auto Precharge control.

The device integrates dedicated circuitry for power management: CKE enables entry into Power Down, Clock Suspend, Self Refresh, and Deep Power Down modes; DQM pins (UDQM/LDQM) provide per-byte write masking and output disable; and the Extended Mode Register supports programmable PASR and ATCSR to reduce refresh current across temperature.

Key Specifications

Pinout & Package

W988D6FBGX6E uses a 54-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.5mm ball pitch. Pin assignments follow JEDEC-standard LPSDR x16 ballout, with dedicated VDD/VSS and VDDQ/VSSQ power/ground pairs for noise isolation between core logic and I/O buffers.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power mobile SDRAM applications.

Compared with W988D6FBGX7E, the W988D6FBGX6E provides higher bandwidth and tighter timing margins; compared with MT48LC16M16A2P-6A:G, it enables true low-power mobile design via 1.8V operation, Deep Power Down, and temperature-adaptive refresh-critical for runtime extension in handheld devices.

Availability

W988D6FBGX6E is available at Aetrix Electronics and suitable for smartphone baseband subsystems, digital camera frame buffering, portable media player streaming, handheld gaming console memory, and other battery-sensitive embedded applications requiring stable component supply across production lifecycles.

Supply support for W988D6FBGX6E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in memory ICs, flash storage, and microcontrollers, with global manufacturing and distribution infrastructure.

The W988D6FBGX6E belongs to Winbond's Low Power SDRAM product line, engineered specifically for energy-constrained mobile platforms where memory density, bandwidth, and sub-mA standby current must coexist.

FAQ

What is the maximum clock frequency supported by the W988D6FBGX6E?

The W988D6FBGX6E supports a maximum clock frequency of 166MHz, as specified in the order information table and confirmed in AC characteristics section 9.6. This corresponds to a -6 speed grade and enables peak data rates up to 332MB/s in burst mode. The device also offers a 133MHz (-75) variant, but W988D6FBGX6E is specifically rated for 166MHz operation under 1.8V supply and extended temperature conditions.

Does the W988D6FBGX6E support Deep Power Down mode?

Yes, the W988D6FBGX6E supports Deep Power Down (DPD) mode, which reduces standby current to ≤1µA. Entry is initiated via the DPD command with CKE low, and exit requires a specific sequence with CKE high and a delay before normal operation resumes. This feature is explicitly listed in Section 2 "Features" and detailed in functional description Section 7.1.20 and timing Section 11.15–11.16 of the datasheet.

What package type and dimensions does the W988D6FBGX6E use?

The W988D6FBGX6E uses a 54-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 5.0mm × 8.0mm × 0.6mm with 0.5mm ball pitch. This is confirmed in Section 3 "Order Information" and Package Specification Section 12.1. The x16 organization and ball assignment match the LPSDR x16 layout shown in Figure 4.1, including dedicated VDDQ/VSSQ planes for I/O noise isolation.

How does Automatic Temperature Compensated Self Refresh (ATCSR) function in the W988D6FBGX6E?

ATCSR in the W988D6FBGX6E dynamically adjusts the self-refresh interval based on die temperature, reducing refresh current at lower temperatures and increasing it near maximum operating limits. This feature is enabled via the Extended Mode Register and is documented in Section 2 "Features" and Section 9.5. It ensures reliable data retention across the full -25°C to +85°C range while minimizing average power consumption compared to fixed-rate self-refresh.

Can the W988D6FBGX6E operate with CAS Latency 2 or 3, and how is it configured?

Yes, the W988D6FBGX6E supports both CAS Latency 2 and 3, selected via bits A6–A4 in the Mode Register Set (MRS) command. CL setting affects read access timing and must be programmed before normal operation begins. This is defined in Section 8.5.7 and Table 8.5.8 (Mode Register Definition), and validated in AC timing parameters Table 9.6.1 for both CL2 and CL3 configurations.