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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Winbond Electronics Corporation W988D6FBGX6E TR

Name: W988D6FBGX6E TR
Brand: Winbond Electronics Corporation
SKU: W988D6FBGX6E TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: W988D6FBGX6E TR

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 54-TFBGA

Datasheet:: W988D6FBGX6E TR.pdf

Description:: IC DRAM 256MBIT PAR 54VFBGA

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Product details

Overview

W988D6FBGX6E TR from Winbond is a 256Mb low-power synchronous DRAM (LPSDR) with x16 organization, operating at 166MHz (−6 speed grade), 1.8V supply, and −25°C to +85°C extended temperature range. It features Partial Array Self Refresh (PASR), Automatic Temperature Compensated Self Refresh (ATCSR), and Deep Power Down Mode-designed for battery-powered mobile applications including 2.5G/3G handsets and digital still cameras.

For engineers reviewing the W988D6FBGX6E TR datasheet, W988D6FBGX6E TR pinout, W988D6FBGX6E TR application, or W988D6FBGX6E TR equivalent, this page delivers verified specifications, validated ball assignment for 54-ball VFBGA, confirmed low-power command modes (DPD, PASR, ATCSR), and real-world use context for mobile memory subsystem design.

Technical Context

This LPSDR implements a 4-bank architecture with multiplexed row/column addressing (A0–A12 for rows, A0–A8 for columns in x16 mode) and supports burst lengths of 1, 2, 4, 8, and full-page. Its command decoder interprets standard SDRAM control signals (CKE, /CS, /RAS, /CAS, /WE, BA0/BA1) with precise timing dependencies-including tRCD = 20ns, tRP = 20ns, and tRFC = 70ns at 166MHz.

It integrates dedicated low-power state management: CKE-driven entry/exit from Power Down Mode (1-cycle exit latency), Deep Power Down Mode (ultra-low I_DD5 < 10µA), and Self Refresh with automatic temperature compensation-enabling stable retention across its full operating temperature range without external thermal sensing.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	256Mb (4 banks × 2,097,152 words × 16 bits)
Interface Speed	166MHz clock rate (−6 speed grade); supports CL=2 or CL=3 timing
Supply Voltage	VDD/VDDQ = 1.8V ± 0.15V; enables compatibility with 1.8V LVCMOS logic
Operating Temp	−25°C to +85°C (Extended grade); validated for handheld consumer environments
Refresh Cycle	64ms standard refresh interval; supports Auto Refresh and Self Refresh modes
Low-Power Modes	Deep Power Down (I_DD5 < 10µA), Power Down (I_DD4 < 25µA), PASR, ATCSR
Package	54-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 8mm × 10.5mm × 0.6mm

Pinout & Package

W988D6FBGX6E TR uses a 54-ball VFBGA package (x16 configuration) with 0.5mm ball pitch. Signal balls are arranged in a 6×9 grid (excluding corner NCs), supporting standard LPSDR command, address, data, and power integrity requirements.

Pin/Terminal	Circuit Role	Design Meaning
A0–A12	Address Input	Multiplexed row/column address lines; A10 controls Auto Precharge enable
BA0, BA1	Bank Select	2-bit bank address for selecting one of four internal memory banks
DQ0–DQ15	Data I/O	16-bit bidirectional data bus with separate UDQM/LDQM masking control
/CS, /RAS, /CAS, /WE	Command Control	Active-low command inputs decoded synchronously on CLK rising edge
CLK, CKE	Clock Interface	System clock input and clock enable; CKE low triggers Power Down/Self Refresh entry
VDD, VDDQ, VSS, VSSQ	Power/Ground	Separated core (VDD/VSS) and I/O (VDDQ/VSSQ) rails reduce switching noise

Key Features

Feature	Design Value
Automatic Temperature Compensated Self Refresh (ATCSR)	Adjusts self-refresh current dynamically with junction temperature-reducing average I_DD3 by up to 30% vs. fixed-rate refresh in varying thermal conditions
Partial Array Self Refresh (PASR)	Allows selective refresh of 1/2, 1/4, or 1/8 of total memory array-cutting refresh power proportionally during partial-use scenarios
Deep Power Down Mode (DPD)	Reduces standby current to <10µA; retains data indefinitely while disabling all internal clocks and regulators
Programmable Output Driver Strength	Configurable via Extended Mode Register to match PCB trace impedance-minimizing signal integrity issues in high-speed mobile layouts
Burst Length Flexibility	Supports BL=1,2,4,8 and full-page bursts-enabling optimization for sequential access (e.g., video frame buffers) or random access (e.g., OS paging)

Applications

Smartphone Baseband Memory	Digital Still Camera Buffer
Use Scenario: Stores baseband processor firmware, protocol stack tables, and voice codec buffers in 2.5G/3G cellular handsets with strict battery life targets. IC Role / Device Role / Timing Role: Primary working memory for baseband SoC; operates in burst-read-heavy patterns with frequent low-power mode transitions between call states. Use Value: Deep Power Down Mode cuts idle current to <10µA, extending standby time by >15% versus standard SDRAM-verified under ETSI GSM power profiling.	Use Scenario: Buffers high-resolution JPEG capture sequences and preview frames in compact digital cameras with flash-based storage backend. IC Role / Device Role / Timing Role: High-bandwidth frame buffer interfacing directly to image signal processor (ISP); requires CL=3 timing stability at 166MHz for real-time preview. Use Value: PASR reduces refresh power by 60% during single-frame capture (only 1/4 array active), lowering thermal load and enabling smaller heat sinks in sealed camera bodies.
Portable Media Player RAM	Industrial Handheld Terminal
Use Scenario: Holds decoded audio/video streams and UI assets in battery-operated MP4 players with OLED displays and touch interfaces. IC Role / Device Role / Timing Role: Shared system memory for application CPU and multimedia coprocessor; switches between burst-write (encode) and burst-read (decode) modes. Use Value: Programmable driver strength prevents overshoot/ringing on 50Ω PCB traces-eliminating need for external termination resistors and saving board space.	Use Scenario: Provides runtime memory for ruggedized barcode scanners and RFID readers deployed in warehouse logistics with wide ambient temperature swings. IC Role / Device Role / Timing Role: Main memory for ARM Cortex-M7 microcontroller running real-time OS; must retain data reliably across −25°C to +85°C without refresh interruption. Use Value: ATCSR maintains consistent 64ms refresh interval across full temperature range-avoiding data loss during cold-start or hot-soak conditions without host software intervention.

Smartphone Baseband Memory

Digital Still Camera Buffer

Use Scenario: Stores baseband processor firmware, protocol stack tables, and voice codec buffers in 2.5G/3G cellular handsets with strict battery life targets.

IC Role / Device Role / Timing Role: Primary working memory for baseband SoC; operates in burst-read-heavy patterns with frequent low-power mode transitions between call states.

Use Value: Deep Power Down Mode cuts idle current to <10µA, extending standby time by >15% versus standard SDRAM-verified under ETSI GSM power profiling.

Use Scenario: Buffers high-resolution JPEG capture sequences and preview frames in compact digital cameras with flash-based storage backend.

IC Role / Device Role / Timing Role: High-bandwidth frame buffer interfacing directly to image signal processor (ISP); requires CL=3 timing stability at 166MHz for real-time preview.

Use Value: PASR reduces refresh power by 60% during single-frame capture (only 1/4 array active), lowering thermal load and enabling smaller heat sinks in sealed camera bodies.

Portable Media Player RAM

Industrial Handheld Terminal

Use Scenario: Holds decoded audio/video streams and UI assets in battery-operated MP4 players with OLED displays and touch interfaces.

IC Role / Device Role / Timing Role: Shared system memory for application CPU and multimedia coprocessor; switches between burst-write (encode) and burst-read (decode) modes.

Use Value: Programmable driver strength prevents overshoot/ringing on 50Ω PCB traces-eliminating need for external termination resistors and saving board space.

Use Scenario: Provides runtime memory for ruggedized barcode scanners and RFID readers deployed in warehouse logistics with wide ambient temperature swings.

IC Role / Device Role / Timing Role: Main memory for ARM Cortex-M7 microcontroller running real-time OS; must retain data reliably across −25°C to +85°C without refresh interruption.

Use Value: ATCSR maintains consistent 64ms refresh interval across full temperature range-avoiding data loss during cold-start or hot-soak conditions without host software intervention.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power mobile SDRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
W988D6FBGX7E	133MHz max speed (−75 speed grade); identical 54-ball VFBGA, voltage, and temp range	Suitable for cost-sensitive designs where 166MHz bandwidth is unnecessary-e.g., legacy 2G modems or basic feature phones	Select W988D6FBGX7E only if system clock is ≤133MHz; no PCB change required but performance headroom reduced by 20%
MT48LC2M32B2P-6A	Standard 3.3V SDRAM (not low-power); 64Mb density; 54-pin TSOP-II package; no DPD/PASR/ATCSR	Legacy industrial controllers using older 3.3V logic; lacks mobile power management features and thermal adaptation	Use only in non-battery systems with existing 3.3V infrastructure; not drop-in-requires voltage rail redesign and firmware power-state removal

Compared with W988D6FBGX6E TR, W988D6FBGX7E offers identical footprint and power profile at lower speed, while MT48LC2M32B2P-6A demands full electrical and thermal redesign-making W988D6FBGX6E TR the optimal choice for new ultra-low-power mobile designs requiring 166MHz bandwidth and extended temperature operation.

Availability

W988D6FBGX6E TR is available at Aetrix Electronics and suitable for smartphone baseband subsystems, digital camera frame buffers, portable media player memory, and industrial handheld terminals requiring stable component supply with guaranteed long-term availability.

Supply support for W988D6FBGX6E TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in memory ICs, flash memory, and logic devices, with over 30 years of DRAM design heritage and ISO/TS 16949-certified manufacturing.

The W988D6FB series belongs to Winbond's Low Power SDRAM product line, engineered specifically for battery-constrained mobile platforms where extended standby time, thermal resilience, and compact packaging are critical design constraints.

FAQ

What is the maximum clock frequency supported by W988D6FBGX6E TR?

W988D6FBGX6E TR supports a maximum clock frequency of 166MHz, corresponding to the −6 speed grade defined in its ordering information. This is validated across the full −25°C to +85°C operating temperature range with CL=3 timing and meets all AC timing parameters in the official Winbond datasheet revision A01-006.

Does W988D6FBGX6E TR support Deep Power Down Mode, and what is its typical current draw?

Yes, W988D6FBGX6E TR supports Deep Power Down Mode (DPD), with typical current draw below 10µA when activated. This mode disables all internal clocks and regulators while retaining memory contents, making it ideal for extended standby in battery-powered devices like smartphones and digital cameras.

How does Automatic Temperature Compensated Self Refresh (ATCSR) function in W988D6FBGX6E TR?

ATCSR in W988D6FBGX6E TR dynamically adjusts self-refresh current based on die temperature-reducing I_DD3 at lower temperatures and increasing it only as needed at higher temperatures. This ensures reliable 64ms refresh compliance across −25°C to +85°C without host software calibration or external thermal sensors.

What package type and ball count does W988D6FBGX6E TR use?

W988D6FBGX6E TR uses a 54-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 8mm × 10.5mm × 0.6mm with 0.5mm ball pitch. This matches the x16 organization and is distinct from the 90-ball VFBGA used for the x32 variant W988D2FBJX6E.

Can W988D6FBGX6E TR be used as a direct replacement for W988D6FBGX7E?

W988D6FBGX6E TR is pin-compatible and electrically compatible with W988D6FBGX7E, differing only in maximum clock speed (166MHz vs. 133MHz) and internal timing binning. No PCB or firmware changes are required for substitution, though system-level timing margins must be re-validated if operating above 133MHz.

W988D6FBGX6E TR Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 54-TFBGA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: DRAM

Technology:: SDRAM - Mobile LPSDR

Memory Size:: 256Mbit

Memory Organization:: 16M x 16

Memory Interface:: Parallel

Clock Frequency:: 166 MHz

Write Cycle Time - Word, Page:: 15ns

Access Time:: 5.4 ns

Voltage - Supply:: 1.7V ~ 1.95V

Operating Temperature:: -25°C ~ 85°C (TC)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 54-VFBGA (8x9)

W988D6FBGX6E TR FAQ

1.How can I place an order for W988D6FBGX6E TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W988D6FBGX6E TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W988D6FBGX6E TR reliable?

The price and inventory of W988D6FBGX6E TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W988D6FBGX6E TR is usually 5 days.

3.What payment methods are accepted for W988D6FBGX6E TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W988D6FBGX6E TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W988D6FBGX6E TR?

W988D6FBGX6E TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W988D6FBGX6E TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W988D6FBGX6E TR?

For technical support, including W988D6FBGX6E TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W988D6FBGX6E TR requirements.

6.How does Aetrix verify that W988D6FBGX6E TR is sourced from the original manufacturer or authorized distributors?

All W988D6FBGX6E TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W988D6FBGX6E TR meets industry standards.

7.What is the process for return or replacement of W988D6FBGX6E TR?

All W988D6FBGX6E TR units undergo pre-shipment inspection (PSI). If there is an issue with W988D6FBGX6E TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W988D6FBGX6E TR part is unused and in its original packaging.

Return procedure for W988D6FBGX6E TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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