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Winbond Electronics Corporation W988D6FBGX6I
- Part No.:
- W988D6FBGX6I
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 54-TFBGA
- Datasheet:
-
W988D6FBGX6I.pdf
- Description:
- IC DRAM 256MBIT PAR 54VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,188
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Product details
Overview
W988D6FBGX6I from Winbond is a 256Mb low-power synchronous DRAM (LPSDR) organized as 4,194,304 words × 4 banks × 16 bits, operating at 166MHz with 1.8V VDD/VDDQ supply, CAS latency 2 or 3, and supporting Partial Array Self Refresh (PASR) for battery-powered mobile applications including 3G handsets and digital still cameras.
For engineers reviewing the W988D6FBGX6I datasheet, W988D6FBGX6I pinout, W988D6FBGX6I application, or W988D6FBGX6I equivalent, key selection criteria include its 54-ball VFBGA x16 package, industrial temperature range (–40°C to +85°C), deep power-down mode, automatic temperature-compensated self-refresh, and LVCMOS-compatible interface timing.
Technical Context
The W988D6FBGX6I implements a fully synchronous architecture with clocked command decoding, four independent banks, and multiplexed address/data I/Os. It supports standard SDRAM command protocols including ACT, READ/READA, WRITE/WRITA, PRE/PREA, MRS/EMRS, and power management commands (PD, DPD, SELF).
Its functional operation relies on bank activation, row/column addressing via A0–A12 and BA0/BA1, burst-length programmability (1/2/4/8/full page), and auto-precharge control via A10. The device uses separate VDDQ/VSSQ rails for I/O noise isolation and supports programmable output driver strength.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 256Mb (4,194,304 × 4 banks × 16 bits) |
| Operating Frequency | 166MHz (–6 speed grade); enables 332MB/s peak bandwidth |
| Supply Voltage | VDD = VDDQ = 1.8V ± 0.15V; ensures compatibility with 1.8V mobile SoC interfaces |
| CAS Latency | Programmable CL2 or CL3; determines read access delay in clock cycles |
| Burst Length | Configurable 1, 2, 4, 8, or full-page; optimizes sequential data throughput per command |
| Refresh Cycle | 64ms interval; maintains data retention without host intervention |
| Temperature Range | Industrial: –40°C to +85°C; validated for extended thermal operation in handheld devices |
Pinout & Package
W988D6FBGX6I uses a 54-ball Very Fine Pitch Ball Grid Array (VFBGA) package, 8mm × 8mm × 0.7mm, with 0.5mm ball pitch and x16 data bus configuration. Pin assignment follows JEDEC-standard LPSDR x16 ball map.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A12 | Address Input | Multiplexed row/column address lines; A10 controls auto-precharge enable |
| BA0, BA1 | Bank Select | Selects one of four internal memory banks during ACT or READ/WRITE |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; synchronized to CLK rising edge |
| /CS, /RAS, /CAS, /WE | Command Control | Active-low signals defining all operations (ACT, READ, WRITE, PRE, etc.) |
| CLK, CKE | Timing Control | System clock input and clock enable; CKE low triggers power-down or self-refresh entry |
| UDQM, LDQM | Data Mask | Upper/lower byte mask for write operations; places DQ outputs in Hi-Z during reads |
| VDD, VSS | Core Power/Ground | 1.8V supply and return for logic circuitry and input buffers |
| VDDQ, VSSQ | I/O Power/Ground | Isolated 1.8V supply/ground for output drivers to reduce switching noise |
Key Features
| Feature | Design Value |
|---|---|
| Deep Power Down Mode (DPD) | Reduces standby current to ≤1μA, extending battery life in sleep states |
| Automatic Temperature Compensated Self Refresh (ATCSR) | Adjusts refresh rate dynamically with junction temperature, minimizing power vs. retention trade-off |
| Partial Array Self Refresh (PASR) | Allows refresh of only active banks, cutting self-refresh current by up to 75% vs. full-array refresh |
| Programmable Output Driver Strength | Enables impedance tuning to match PCB trace characteristics and reduce signal integrity issues |
| LVCMOS-Compatible Interface | Meets 1.8V signaling standards for seamless integration with mobile application processors |
Applications
| Smartphone Baseband Memory | Digital Still Camera Buffer |
|---|---|
Use Scenario: Stores frame buffers and image processing pipelines in 3G/4G mobile handsets with strict thermal and battery constraints. IC Role / Device Role / Timing Role: Low-power SDRAM providing burst-accessed working memory for baseband and application processors. Use Value: Enables 166MHz operation with PASR and DPD to extend talk time while maintaining 256Mb density in compact VFBGA footprint. |
Use Scenario: Buffers high-resolution JPEG capture sequences and real-time preview in portable digital cameras. IC Role / Device Role / Timing Role: High-bandwidth, low-latency memory for rapid sensor-to-storage data transfer and display rendering. Use Value: CL2/CL3 latency and 8-word burst support deliver deterministic timing for burst capture; ATCSR ensures reliability across ambient temperature swings. |
| Portable Gaming Console RAM | Industrial Handheld Terminal Memory |
Use Scenario: Serves as main system memory in battery-operated game consoles requiring fast load times and responsive UI rendering. IC Role / Device Role / Timing Role: Synchronous DRAM executing interleaved bank reads/writes to sustain GPU and CPU bandwidth demands. Use Value: Four-bank architecture with auto-precharge minimizes row conflicts; 54-ball VFBGA simplifies layout in space-constrained PCBs. |
Use Scenario: Provides reliable runtime memory for barcode scanners, RFID readers, and ruggedized field terminals operating in wide-temperature environments. IC Role / Device Role / Timing Role: Industrial-grade LPSDR delivering stable performance under thermal stress and voltage variation. Use Value: –40°C to +85°C rating and 1.8V tolerance ensure uninterrupted operation; deep power-down supports long idle periods between scans. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power mobile SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| W988D6FBGX7I | 133MHz speed grade (–7), same 54-ball VFBGA x16, identical voltage and temperature specs | Suitable where system clock budget or timing margin requires lower frequency | Select W988D6FBGX7I when 166MHz timing closure is not achievable or power savings outweigh bandwidth needs |
| MT46H32M16LFCK-6 IT:F | 256Mb LPDDR1 (x32), 1.2V core, 200-ball BGA, different command protocol and pinout | Requires redesign for LPDDR1 interface; higher bandwidth but incompatible with SDRAM controllers | Choose only if migrating to LPDDR1 architecture; not drop-in compatible with W988D6FBGX6I |
Compared with W988D6FBGX6I, W988D6FBGX7I offers relaxed timing at lower frequency with identical packaging and thermal rating, while MT46H32M16LFCK-6 IT:F provides higher bandwidth via LPDDR1 but mandates controller and layout changes - making W988D6FBGX6I optimal for cost-sensitive, SDRAM-native mobile designs needing industrial temperature support.
Availability
W988D6FBGX6I is available at Aetrix Electronics and suitable for smartphone baseband subsystems, digital camera image buffers, portable gaming console memory, industrial handheld terminals, and other embedded applications requiring stable component supply with industrial temperature qualification and low-power DRAM functionality.
Supply support for W988D6FBGX6I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in memory ICs, flash storage, and microcontrollers, with global distribution and automotive-qualified process technologies.
The W988D6FBGX6I belongs to Winbond's Low Power SDRAM product line, designed specifically for battery-powered portable electronics demanding high density, low active/idle current, and robust thermal performance.
FAQ
What is the maximum operating frequency of the W988D6FBGX6I?
The W988D6FBGX6I is rated for 166MHz operation (–6 speed grade), corresponding to a clock period of 6ns. This frequency enables peak data transfer rates of 332MB/s in burst mode. The device also supports 133MHz (–7) operation, but W988D6FBGX6I is specifically configured and tested for 166MHz performance at 1.8V and –40°C to +85°C.
Does the W988D6FBGX6I support automatic temperature-compensated self-refresh?
Yes, the W988D6FBGX6I implements Automatic Temperature Compensated Self Refresh (ATCSR), which dynamically adjusts the self-refresh interval based on die temperature. This feature reduces average refresh current at lower temperatures while ensuring data retention at elevated junction temperatures - critical for thermally constrained mobile devices where W988D6FBGX6I is deployed.
What package type and ball count does the W988D6FBGX6I use?
The W988D6FBGX6I uses a 54-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 8mm × 8mm × 0.7mm with 0.5mm ball pitch. This x16-organized package is optimized for space-constrained mobile PCBs and matches JEDEC LPSDR x16 mechanical and thermal specifications defined in the official Winbond datasheet.
Can the W988D6FBGX6I operate over the industrial temperature range?
Yes, the W988D6FBGX6I is qualified for the industrial temperature range of –40°C to +85°C, as indicated by the "I" suffix in its part number. This rating is verified across all electrical parameters including AC timing, DC leakage, and refresh stability, making it suitable for ruggedized handheld equipment where ambient conditions exceed commercial-grade limits.
How does the Partial Array Self Refresh (PASR) function work in the W988D6FBGX6I?
In the W988D6FBGX6I, PASR allows selective self-refresh of only one, two, or all four internal memory banks via Extended Mode Register (EMR) configuration. When enabled, PASR reduces self-refresh current proportionally - e.g., refreshing one bank cuts current by ~75% versus full-array refresh - directly extending battery life in applications where only a subset of memory is actively used.
W988D6FBGX6I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 54-TFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPSDR
- Memory Size:
- 256Mbit
- Memory Organization:
- 16M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 166 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 5.4 ns
- Voltage - Supply:
- 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-VFBGA (8x9)
W988D6FBGX6I FAQ
1.How can I place an order for W988D6FBGX6I through Aetrix?
Please submit a Request for Quotation (RFQ) for W988D6FBGX6I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W988D6FBGX6I reliable?
The price and inventory of W988D6FBGX6I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W988D6FBGX6I is usually 5 days.
3.What payment methods are accepted for W988D6FBGX6I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W988D6FBGX6I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W988D6FBGX6I?
W988D6FBGX6I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W988D6FBGX6I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W988D6FBGX6I?
For technical support, including W988D6FBGX6I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W988D6FBGX6I requirements.
6.How does Aetrix verify that W988D6FBGX6I is sourced from the original manufacturer or authorized distributors?
All W988D6FBGX6I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W988D6FBGX6I meets industry standards.
7.What is the process for return or replacement of W988D6FBGX6I?
All W988D6FBGX6I units undergo pre-shipment inspection (PSI). If there is an issue with W988D6FBGX6I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W988D6FBGX6I part is unused and in its original packaging.
Return procedure for W988D6FBGX6I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W988D6FBGX6I Tags
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M24C02-WMN6TP
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