Winbond Electronics Corporation W988D6FBGX6I TR

Overview

W988D6FBGX6I TR from Winbond is a 256Mb low-power synchronous DRAM (LPSDR) with x16 I/O width, 166MHz clock rate, 1.8V VDD/VDDQ supply, and 54-ball VFBGA package. It implements Partial Array Self Refresh (PASR), Automatic Temperature Compensated Self Refresh (ATCSR), and Deep Power Down Mode for battery-powered mobile applications including 3G smartphones and digital still cameras.

For engineers reviewing the W988D6FBGX6I TR datasheet, W988D6FBGX6I TR pinout, W988D6FBGX6I TR application, or W988D6FBGX6I TR equivalent, this page delivers verified electrical specs, ball assignment mapping, low-power timing behavior, industrial temperature support (–40°C to +85°C), and validated alternative parts for memory subsystem design and BOM optimization.

Technical Context

The W988D6FBGX6I TR operates in fully synchronous mode with data synchronized to positive CLK edges. Its command decoder interprets RAS/CAS/WE combinations to execute bank activate, precharge, read/write with or without auto-precharge, MRS/EMRS, self-refresh entry/exit, and Deep Power Down entry/exit - all governed by strict tRCD, tRP, tRFC, and tWR timing constraints.

It features four independent banks, programmable burst lengths (1/2/4/8/full page), CAS latency options of 2 or 3, and dual power domains (VDD for core logic, VDDQ for I/O buffers). The A10 pin serves as Auto Precharge Select, and BA0/BA1 select one of four banks during row/column address latching.

Key Specifications

Pinout & Package

Package: 54-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6.0mm × 8.0mm × 0.6mm, 0.5mm ball pitch, x16 organization.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power mobile SDRAM applications.

Compared with W988D6FBGX6I TR, W988D6FBGX7I offers identical industrial temperature support but trades 33MHz bandwidth for relaxed timing validation, while MT46H32M16LFCK-6 IT:F provides higher peak throughput at the cost of increased power and incompatible command set - making W988D6FBGX6I TR optimal for legacy SDRAM-based designs prioritizing ultra-low standby current and proven thermal resilience.

Availability

W988D6FBGX6I TR is available at Aetrix Electronics and suitable for smartphone baseband subsystems, digital camera buffer memory, portable gaming console RAM, industrial handheld terminal memory, and other applications requiring stable component supply with industrial temperature certification and low-power DRAM functionality.

Supply support for W988D6FBGX6I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in memory ICs, flash memory, and microcontrollers, with over 30 years of DRAM design heritage and ISO/TS 16949-certified manufacturing.

The W988D6FBGX6I TR belongs to Winbond's Low Power SDRAM product line, engineered specifically for battery-constrained mobile platforms where extended runtime, thermal robustness, and small-footprint packaging are critical system requirements.

FAQ

What is the maximum clock frequency supported by the W988D6FBGX6I TR?

The W988D6FBGX6I TR is rated for 166MHz operation (–6 speed grade), confirmed in the official Winbond datasheet revision A01-006. It also supports 133MHz (–75) operation via mode register configuration. This 166MHz capability enables 332MB/s peak bandwidth in burst mode, meeting real-time multimedia processing demands in 3G smartphones and digital cameras where the W988D6FBGX6I TR is deployed.

Does the W988D6FBGX6I TR support Deep Power Down Mode, and what is its typical current draw?

Yes, the W988D6FBGX6I TR supports Deep Power Down Mode (DPD), entering a state with ICC < 1µA while retaining memory contents. DPD is entered via the DPD command with CKE low and exited using the DPDE command. This ultra-low-power state is critical for long-term standby in handheld devices, and the W988D6FBGX6I TR's DPD implementation is validated across its full –40°C to +85°C industrial temperature range.

What package type and ball count does the W988D6FBGX6I TR use?

The W988D6FBGX6I TR uses a 54-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 6.0mm × 8.0mm × 0.6mm with 0.5mm ball pitch. This compact footprint supports high-density PCB layouts in space-constrained mobile applications. The ball assignment matches the x16 LPSDR configuration defined in section 4.1 of the Winbond datasheet, and the W988D6FBGX6I TR's pinout is electrically and mechanically identical to other members of the W988D6FB family in the same package variant.

How does Automatic Temperature Compensated Self Refresh (ATCSR) function in the W988D6FBGX6I TR?

ATCSR in the W988D6FBGX6I TR dynamically adjusts self-refresh current based on internal die temperature: it reduces refresh current at lower temperatures (e.g., 25°C) to save power and increases it at elevated temperatures (e.g., 85°C) to ensure data retention. This feature is enabled by default and requires no external control. For battery-powered systems relying on the W988D6FBGX6I TR, ATCSR contributes directly to >25% reduction in average self-refresh power versus fixed-rate schemes.

Is the W988D6FBGX6I TR pin-compatible with other Winbond LPSDR parts like W988D6FBGX7I?

Yes, the W988D6FBGX6I TR is pin-compatible with W988D6FBGX7I and all other W988D6FB variants in the 54-ball VFBGA x16 package. They share identical ball assignment, signal definitions, power pin layout, and mechanical footprint. The primary differences lie in speed grade (166MHz vs. 133MHz) and AC timing parameters - not pinout or package - allowing direct substitution in existing designs where timing margins permit, without PCB changes.