Winbond Electronics Corporation W988D6FBGX7E TR

Overview

W988D6FBGX7E TR from Winbond is a 256Mb low-power synchronous DRAM (LPSDR) with x16 I/O width, 133MHz max clock frequency, 1.8V VDD/VDDQ supply, and 54-ball VFBGA package. It implements Partial Array Self Refresh (PASR), Automatic Temperature Compensated Self Refresh (ATCSR), and Deep Power Down Mode for battery-powered mobile applications including 3G/4G handsets and digital cameras.

For engineers reviewing the W988D6FBGX7E TR datasheet, W988D6FBGX7E TR pinout, W988D6FBGX7E TR application, or W988D6FBGX7E TR equivalent, key selection criteria include CAS latency (CL=2/3), burst length programmability (1–8, full page), 4-bank architecture, -25°C to +85°C extended temperature range, and LVCMOS-compatible interface timing compliance.

Technical Context

This LPSDR operates in fully synchronous mode with data output aligned to positive clock edges and supports command decoding via /CS, /RAS, /CAS, and /WE inputs. Its internal architecture includes four independent banks, a programmable mode register (MRS/EMRS), and dedicated control logic for auto-precharge, burst termination, and power-state transitions (Power Down, Deep Power Down, Self Refresh).

Timing behavior is governed by critical parameters including tRCD (20ns), tRP (20ns), tRFC (120ns), and tWR (15ns), all specified at 133MHz operation. The device uses multiplexed address pins (A0–A12 for row/column), bank-select pins BA0/BA1, and dual DQM masking (UDQM/LDQM) for precise write/read control without bus contention.

Key Specifications

Pinout & Package

W988D6FBGX7E TR uses a 54-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 8mm × 10.5mm × 0.6mm (JEDEC MO-245). Ball pitch is 0.65mm, and the package is lead-free and RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power SDRAM applications.

Compared with W988D6FBGX6E, W988D6FBGX7E TR trades 33MHz bandwidth and industrial temperature for lower cost and optimized 133MHz power efficiency; versus IS42S16100E-7BLI, it delivers double density plus PASR/ATCSR/DPD - essential for modern portable battery life targets.

Availability

W988D6FBGX7E TR is available at Aetrix Electronics and suitable for smartphone baseband subsystems, digital camera image buffers, portable media player UI rendering, industrial handheld terminals, and other embedded applications requiring stable component supply with guaranteed long-term availability.

Supply support for W988D6FBGX7E TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in memory ICs, flash memory, and logic devices, with over 30 years of DRAM design expertise and global foundry partnerships.

The W988D6FB series belongs to Winbond's Low Power SDRAM product line, engineered specifically for battery-constrained mobile platforms where memory bandwidth must be balanced against milliamp-hour budget constraints.

FAQ

What is the maximum operating frequency of the W988D6FBGX7E TR?

The W988D6FBGX7E TR is rated for a maximum clock frequency of 133MHz, corresponding to a -75 speed grade. This is confirmed in the Order Information table and AC Characteristics section of the datasheet, where tAC (access time) is specified as 7.5ns at VDD=1.8V and TA=-25°C to +85°C. Operation above 133MHz violates timing specifications and may cause data corruption.

Does the W988D6FBGX7E TR support CAS Latency 2?

Yes, the W988D6FBGX7E TR supports both CAS Latency 2 and CAS Latency 3, selectable via the Mode Register Set (MRS) command. The CL setting determines the number of clock cycles between the READ command and first valid data output. CL=2 reduces read latency by one cycle but requires tighter timing margins on the host controller interface.

What power-saving modes does the W988D6FBGX7E TR implement?

The W988D6FBGX7E TR implements three distinct low-power states: Power Down Mode (reduced current via clock gating), Deep Power Down Mode (≤1μA standby current), and Self Refresh Mode with Automatic Temperature Compensation (ATCSR). It also supports Partial Array Self Refresh (PASR) to refresh only active banks, further lowering dynamic power during partial utilization.

Is the W988D6FBGX7E TR pin-compatible with the W988D6FBGX6E?

Yes, the W988D6FBGX7E TR and W988D6FBGX6E share identical 54-ball VFBGA packaging, pin assignment, and signal definitions per Section 4.1 of the datasheet. Both use the same x16 ball map with matching A0–A12, BA0/BA1, DQ0–DQ15, UDQM/LDQM, and command/control ball layout - enabling drop-in replacement where timing and temperature requirements align.

What is the purpose of the A10 pin on the W988D6FBGX7E TR?

On the W988D6FBGX7E TR, the A10 pin serves as the Auto Precharge (AP) select signal during READ and WRITE commands. When A10 is driven high during command issuance, the device automatically issues a precharge command at burst completion. This eliminates the need for explicit PRE or PREA commands in sequential access patterns, simplifying controller firmware and improving bandwidth efficiency.