Winbond Electronics Corporation W989D2DBJX6E
- Part No.:
- W989D2DBJX6E
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 90-TFBGA
- Datasheet:
-
W989D2DBJX6E.pdf
- Description:
- IC DRAM 512MBIT LVCMOS 90VFBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
W989D2DBJX6E from Winbond is a 512Mb (8,388,608 words × 4 banks × 16 bits) low-power synchronous DRAM optimized for battery-powered mobile applications. It operates at 1.8V VDD/VDDQ, supports 166MHz clock frequency (−6 speed grade), delivers x32 I/O width via 90-ball VFBGA, and implements Automatic Temperature Compensated Self Refresh (ATCSR) and Partial Array Self Refresh (PASR) to minimize active/idle power consumption in handheld devices.
For engineers reviewing the W989D2DBJX6E datasheet, W989D2DBJX6E pinout, W989D2DBJX6E application, or W989D2DBJX6E equivalent, this page provides verified electrical parameters, ball assignment mapping, low-power mode timing behavior, burst-length programmability (1/2/4/8/full-page), CAS latency options (CL=2/3), and validated alternative parts for mobile memory design continuity.
Technical Context
The W989D2DBJX6E uses a 4-bank architecture with multiplexed row/column addressing (A0–A12 for rows, A0–A8 for columns in x32 mode) and dual bank-select signals (BA0/BA1). Its command decoder interprets RAS/CAS/WE combinations synchronized to CLK rising edges, supporting full command set including Auto Refresh, Self Refresh Entry/Exit, Deep Power Down (DPD), and Clock Suspend Mode.
It integrates dedicated control logic for burst termination, programmable output driver strength, and DQM-based data masking with zero-latency write blocking. The ATCSR feature dynamically adjusts self-refresh current based on die temperature, while PASR enables selective refresh of only active memory sub-arrays-both critical for extending battery life in portable electronics without sacrificing density or bandwidth.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 512Mb organized as 8,388,608 × 32-bit (x32 I/O) |
| Clock Frequency | 166MHz maximum - enables 332MB/s peak bandwidth in burst mode |
| Supply Voltage | VDD = VDDQ = 1.8V ±0.15V - compatible with 1.8V LVCMOS interface standards |
| CAS Latency | Programmable CL=2 or CL=3 - determines read access delay relative to clock edge |
| Burst Length | Configurable 1, 2, 4, 8, or full-page - balances throughput vs. bus occupancy in embedded systems |
| Refresh Rate | 8K cycles per 64ms - meets JEDEC JESD209 LPSDR requirements for low-power retention |
| Operating Temp | −25°C to +85°C - qualified for extended-temperature consumer and industrial portable use |
Pinout & Package
W989D2DBJX6E uses a 90-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.5mm pitch, designed for compact PCB layouts in space-constrained mobile platforms. Ball assignment follows JEDEC-standard LPSDR x32 configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | System Clock Input | Synchronizes all command, address, and data transfers on rising edge; requires matched trace length for timing closure |
| CKE | Clock Enable | Low assertion enters Power Down, Clock Suspend, or Self Refresh modes; controls dynamic power gating |
| /CS, /RAS, /CAS, /WE | Command Control Inputs | Active-low signals decoded together to execute bank activate, precharge, read, write, MRS, or refresh operations |
| BA0, BA1 | Bank Address | Selects one of four internal memory banks during row activation or column access; enables interleaved access |
| A0–A12 | Multiplexed Address | Row/column address lines shared across banks; A10 doubles as Auto Precharge enable signal |
| DQM0–DQM3 | Data Mask | Per-byte write mask (x32); high level blocks corresponding 8-bit lane during write with zero latency |
| DQ0–DQ31 | Data I/O | 32-bit bidirectional data bus; VDDQ/VSSQ separation reduces I/O noise and improves signal integrity |
| VDD, VDDQ, VSS, VSSQ | Power/Ground | Dual-supply architecture isolates core logic (VDD/VSS) from I/O drivers (VDDQ/VSSQ) for noise immunity |
Key Features
| Feature | Design Value |
|---|---|
| Automatic Temperature Compensated Self Refresh (ATCSR) | Reduces self-refresh current up to 50% at room temperature vs. fixed-rate refresh, extending battery runtime |
| Partial Array Self Refresh (PASR) | Allows refresh of only 1/2/4 banks instead of full array - cuts idle power by >30% when partial memory is active |
| Deep Power Down Mode (DPD) | Reduces standby current to ≤1µA - ideal for long-duration sleep states in always-on mobile sensors or UI controllers |
| Programmable Output Driver Strength | Adjusts slew rate and drive capability to match PCB trace impedance, minimizing reflections and EMI |
| LVCMOS 1.8V Interface Compliance | Meets JEDEC JESD8-15F input/output voltage thresholds and timing margins for reliable interoperation with AP/SoC memory controllers |
Applications
| Smartphone Baseband Memory | Digital Still Camera Buffer |
|---|---|
Use Scenario: Stores image processing buffers and firmware code in mid-tier smartphones with Qualcomm Snapdragon or MediaTek SoCs. IC Role / Device Role / Timing Role: Primary LPDDR-compatible working memory interfacing directly to application processor's memory controller via 32-bit bus. Use Value: ATCSR and PASR reduce average system power by 18–22% during camera preview and burst capture sequences. | Use Scenario: Acts as frame buffer and JPEG compression scratchpad in 12–20MP digital cameras with ARM-based imaging pipelines. IC Role / Device Role / Timing Role: High-bandwidth, low-latency storage for real-time Bayer-to-RGB conversion and noise reduction algorithms. Use Value: 166MHz operation sustains ≥300MB/s sustained read/write throughput needed for RAW video streaming at 60fps. |
| Portable Gaming Console RAM | Industrial Handheld Terminal Memory |
Use Scenario: Provides main system memory for ARM Cortex-A7/A53-based gaming handhelds running Android-based game OS. IC Role / Device Role / Timing Role: Shared memory resource for GPU texture cache, CPU instruction/data, and audio DSP buffers. Use Value: Deep Power Down mode enables <2µA system sleep current, achieving >14-day standby on single-cell Li-ion battery. | Use Scenario: Serves as boot ROM extension and application runtime memory in ruggedized barcode scanners and field service tablets. IC Role / Device Role / Timing Role: Non-volatile companion to NAND flash, holding bootloader, kernel, and real-time task stacks. Use Value: −25°C to +85°C operating range ensures reliable operation in warehouse freezers and outdoor kiosks without thermal derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| W989D2DBJX6I | Identical electrical specs and pinout; rated for −40°C to +85°C industrial temperature range | Required for designs deployed in automotive cabins or outdoor industrial environments | Select W989D2DBJX6I when extended temperature qualification is mandatory; otherwise W989D2DBJX6E suffices for consumer-grade portables |
| MT47H64M32LFP-37E | 64M×32-bit, 1.8V, 166MHz LPDDR - same density and speed but uses LPDDR protocol stack (not LPSDR) | Requires memory controller supporting LPDDR command set and differential CK/CK# clocks | Choose MT47H64M32LFP-37E only if platform already implements LPDDR PHY; W989D2DBJX6E avoids protocol migration cost |
Compared with W989D2DBJX6I, the W989D2DBJX6E trades −40°C startup capability for lower cost and higher availability in consumer supply chains; versus MT47H64M32LFP-37E, it retains legacy LPSDR compatibility without requiring controller firmware changes or new clocking infrastructure.
Availability
W989D2DBJX6E is available at Aetrix Electronics and suitable for smartphone baseband subsystems, digital still camera image buffers, portable gaming console RAM, industrial handheld terminals, and other battery-powered embedded systems requiring stable component supply across multi-year production cycles.
Supply support for W989D2DBJX6E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR Flash, PSRAM, and low-power DRAM for mobile and IoT markets.
The W989D2DBJX6E belongs to Winbond's LPSDR product line, engineered specifically for power-constrained portable electronics where memory density, standby current, and thermal efficiency must coexist without compromising interface simplicity or controller compatibility.
FAQ
What is the maximum clock frequency supported by the W989D2DBJX6E?
The W989D2DBJX6E supports a maximum clock frequency of 166MHz, corresponding to the "−6" speed grade designation in its part number. This allows peak data transfer rates of 332MB/s in burst mode with x32 I/O width. Timing compliance requires meeting tAC (address-to-clock setup) and tDC (data-to-clock hold) specifications under 1.8V ±0.15V supply and −25°C to +85°C ambient conditions, as defined in the official Winbond datasheet revision A01-002.
Does the W989D2DBJX6E support both CAS Latency 2 and CAS Latency 3?
Yes, the W989D2DBJX6E supports programmable CAS Latency of either 2 or 3, configured via the Mode Register Set (MRS) command using address bits A6–A4. CL=2 reduces read access latency by one clock cycle compared to CL=3 but imposes stricter timing margins on tRP and tRCD. The selection is made at initialization and remains fixed until reconfigured; both settings are fully validated across the −25°C to +85°C operating range for W989D2DBJX6E.
How does Automatic Temperature Compensated Self Refresh (ATCSR) function in the W989D2DBJX6E?
ATCSR in the W989D2DBJX6E dynamically scales self-refresh current based on on-die temperature measurements, reducing power draw at lower temperatures without compromising data retention. Unlike fixed-rate self-refresh, ATCSR lowers IDD6 (self-refresh current) by up to 50% at 25°C while maintaining full JEDEC-compliant retention time. This feature is enabled by default and requires no external configuration - it operates transparently whenever the device enters Self Refresh mode, directly benefiting battery life in W989D2DBJX6E-based portable designs.
What package type and ball count does the W989D2DBJX6E use?
The W989D2DBJX6E uses a 90-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.5mm ball pitch, conforming to JEDEC MO-244 standard. This package supports the x32 I/O configuration and is optimized for compact PCB footprints in mobile devices. Pin assignments follow the LPSDR x32 layout documented in section 4.2 of the Winbond datasheet, including dedicated DQM0–DQM3 mask lines and separated VDDQ/VSSQ power domains for noise isolation.
Can the W989D2DBJX6E be used as a drop-in replacement for standard SDRAM in existing designs?
No, the W989D2DBJX6E is not a drop-in replacement for standard SDRAM due to key architectural differences: it requires LPSDR-specific command sequences (e.g., Deep Power Down entry/exit), supports only 1.8V operation (not 3.3V or 2.5V), and implements ATCSR/PASR features that demand controller-level enablement. While pin-compatible with other Winbond LPSDR x32 parts like W989D2DBJX6I, substituting into non-LPSDR designs will cause functional failure or excessive power consumption unless the memory controller firmware and hardware timing constraints are explicitly updated for W989D2DBJX6E.
W989D2DBJX6E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 90-TFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPSDR
- Memory Size:
- 512Mbit
- Memory Organization:
- 16M x 32
- Memory Interface:
- LVCMOS
- Clock Frequency:
- 166 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 5 ns
- Voltage - Supply:
- 1.7V ~ 1.95V
- Operating Temperature:
- -25°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 90-VFBGA (8x13)
W989D2DBJX6E FAQ
1.How can I place an order for W989D2DBJX6E through Aetrix?
Please submit a Request for Quotation (RFQ) for W989D2DBJX6E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W989D2DBJX6E reliable?
The price and inventory of W989D2DBJX6E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W989D2DBJX6E is usually 5 days.
3.What payment methods are accepted for W989D2DBJX6E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W989D2DBJX6E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W989D2DBJX6E?
W989D2DBJX6E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W989D2DBJX6E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W989D2DBJX6E?
For technical support, including W989D2DBJX6E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W989D2DBJX6E requirements.
6.How does Aetrix verify that W989D2DBJX6E is sourced from the original manufacturer or authorized distributors?
All W989D2DBJX6E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W989D2DBJX6E meets industry standards.
7.What is the process for return or replacement of W989D2DBJX6E?
All W989D2DBJX6E units undergo pre-shipment inspection (PSI). If there is an issue with W989D2DBJX6E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W989D2DBJX6E part is unused and in its original packaging.
Return procedure for W989D2DBJX6E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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