Winbond Electronics Corporation W989D2DBJX6E TR

Overview

W989D2DBJX6E TR from Winbond is a 512Mb low-power synchronous DRAM (LPSDR) with x32 I/O width, 1.8V supply, and 166MHz clock rate. It features 4 banks, CAS latency 2/3, burst lengths up to 8, and operates across -25°C to +85°C. Designed for battery-powered mobile applications including 3G/4G handsets and digital cameras where memory density and power efficiency are critical.

For engineers reviewing the W989D2DBJX6E TR datasheet, W989D2DBJX6E TR pinout, W989D2DBJX6E TR application, or W989D2DBJX6E TR equivalent, this page delivers verified specifications, ball assignment mapping, low-power mode behavior, and real-world use context - all aligned to Winbond's official A01-002 revision documentation.

Technical Context

The W989D2DBJX6E TR implements a fully synchronous interface with command decoding synchronized to CLK rising edges. Its architecture includes four independent banks, programmable partial array self-refresh (PASR), and automatic temperature-compensated self-refresh (ATCSR) to reduce standby current across operating temperatures.

It supports deep power-down (DPD), clock suspend, and power-down modes controlled via CKE and DQM signals. Command execution follows strict state-dependent rules - e.g., Bank Activate requires RAS=L/CAS=H/WE=H with valid BA and row address, while Precharge All asserts RAS=L/CAS=H/WE=L with A10=H - ensuring deterministic timing and bank isolation.

Key Specifications

Pinout & Package

W989D2DBJX6E TR uses a 90-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package optimized for space-constrained mobile PCBs. Ball pitch is 0.5mm, body size is 8.0mm × 10.5mm × 0.6mm (max).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power mobile SDRAM applications.

Compared with W989D2DBJX6I, the W989D2DBJX6E TR trades 15°C lower minimum operating temperature for cost and supply chain advantages in commercial applications; versus MT46H32M32LF-6 IT:C, it preserves SDR command compatibility and simplifies migration from existing Winbond LPSDR designs.

Availability

W989D2DBJX6E TR is available at Aetrix Electronics and suitable for smartphone baseband memory, digital camera buffers, portable gaming console RAM, and industrial handheld terminal memory requiring stable component supply across production lifecycles.

Supply support for W989D2DBJX6E TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory and microcontrollers, with over 30 years of DRAM process expertise and global foundry partnerships.

The W989D2DBJX6E TR belongs to Winbond's Low Power SDRAM (LPSDR) product line, engineered specifically for battery-operated mobile devices demanding high density, low voltage operation, and advanced power-state control without sacrificing timing predictability.

FAQ

What is the exact memory organization of the W989D2DBJX6E TR?

The W989D2DBJX6E TR is organized as 4,194,304 words × 4 banks × 32 bits, totaling 536,870,912 bits (512Mb). This x32 configuration uses 90-ball VFBGA packaging and differs from the x16 variant W989D6DB series. Row addresses span A0–A12 (13 bits), column addresses use A0–A8 (9 bits), and BA0/BA1 select among four banks - all confirmed in Winbond's A01-002 datasheet section 5.2.

Does the W989D2DBJX6E TR support true pin-to-pin compatibility with other Winbond LPSDR parts?

The W989D2DBJX6E TR shares identical ball assignment and signal definitions with W989D2DBJX6I (same x32 VFBGA-90 package), making them mechanically and electrically interchangeable. However, it is not pin-compatible with x16 variants like W989D6DB - those use 54-ball VFBGA and different DQM/ball mapping. Always verify temperature grade and ordering suffix before substitution.

How does Automatic Temperature Compensated Self Refresh (ATCSR) function in the W989D2DBJX6E TR?

In the W989D2DBJX6E TR, ATCSR dynamically adjusts self-refresh interval based on internal die temperature - reducing refresh frequency when cool and increasing it when hot - while maintaining data retention. This feature cuts average ICCS current by up to 40% across -25°C to +85°C, directly extending battery life without host software involvement or external thermal sensors.

What are the timing requirements for entering Deep Power Down mode on the W989D2DBJX6E TR?

To enter Deep Power Down (DPD) mode, the W989D2DBJX6E TR requires /CS=L, /RAS=L, /CAS=L, /WE=L, and CKE=L for ≥100ns, with all banks precharged and no ongoing burst. Exit requires CKE=H followed by tDPDEX ≥100µs before issuing any command. These constraints are specified in section 11.15–11.16 of the official datasheet and differ from standard Power Down timing.

Can the W989D2DBJX6E TR operate reliably at 166MHz across its full temperature range?

Yes - the W989D2DBJX6E TR is fully characterized for 166MHz operation (tCK = 6ns) from -25°C to +85°C, meeting all AC timing parameters including tRCD=20ns, tRP=20ns, and tRC=60ns. This rating is explicitly stated in the "ORDER INFORMATION" table (page 4) and validated in AC Characteristics section 9.6.1 of the A01-002 datasheet.