Winbond Electronics Corporation W989D2DBJX6I TR

Overview

W989D2DBJX6I TR from Winbond is a 512Mb mobile low-power SDRAM (LPSDR) with x32 I/O width, 166MHz clock rate (−6 speed grade), 1.8V VDD/VDDQ supply, and 90-ball VFBGA package. It implements Partial Array Self Refresh (PASR) and Automatic Temperature Compensated Self Refresh (ATCSR) for battery-powered handheld systems requiring high-density memory with ultra-low standby current (0.3mA in power-down mode).

For engineers reviewing the W989D2DBJX6I TR datasheet, W989D2DBJX6I TR pinout, W989D2DBJX6I TR application, or W989D2DBJX6I TR equivalent, this device is selected for mobile SoC memory subsystems where burst-length flexibility (1/2/4/8/full page), CAS latency 2/3 support, and deep power down (10μA) are critical to system-level power budgeting and thermal management.

Technical Context

This LPSDR operates fully synchronously to the rising edge of CLK, supports command decoding via CS/RAS/CAS/WE, and uses BA0/BA1 to select among four internal banks. Its architecture includes on-die refresh counters, programmable output driver strength, and dual-mode self-refresh (full/partial array) controlled via Extended Mode Register (EMR).

The device implements LVCMOS-compatible signaling with separate VDDQ/VSSQ rails for I/O noise isolation, and supports clock suspend, power-down, and deep power-down modes-all entered via CKE control. Address multiplexing uses A0–A12 for rows and A0–A8 for columns in x32 configuration, with A10 serving as Auto Precharge Select.

Key Specifications

Pinout & Package

W989D2DBJX6I TR is housed in a 90-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 10.5mm × 13.0mm × 0.6mm (JEDEC MO-245), optimized for space-constrained mobile PCB layouts. Pin assignments follow the x32 configuration defined in Winbond's datasheet Section 4.2.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power mobile SDRAM applications.

Compared with ISSI IS42S32400F-6BLI and Micron MT46H32M32LF-6 IT:B, W989D2DBJX6I TR delivers unique ultra-low-power operation through ATCSR and PASR-critical for battery-limited designs-while maintaining full SDRAM command compatibility and industrial temperature resilience without requiring LPDDR2 controller changes.

Availability

W989D2DBJX6I TR is available at Aetrix Electronics and suitable for smartphone baseband subsystems, digital still camera frame buffers, portable gaming console memory, industrial PDA systems, and other applications requiring stable component supply with long-term lifecycle assurance.

Supply support for W989D2DBJX6I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory, flash, and logic ICs, with over 30 years of DRAM design heritage and ISO/TS 16949-certified manufacturing.

The W989D2KB family was designed specifically for mobile and handheld applications demanding high memory density, ultra-low power consumption, and industrial-grade reliability-targeting 2.5G/3G cellular, PDA, DSC, and portable gaming markets.

FAQ

What is the maximum clock frequency supported by W989D2DBJX6I TR?

W989D2DBJX6I TR supports a maximum clock frequency of 166MHz, corresponding to a minimum clock cycle time (tCK) of 6ns at CAS Latency 3. This is specified in the −6 speed grade and validated across the full industrial temperature range (−40°C to +85°C). The device maintains timing compliance under worst-case voltage (1.7V) and temperature conditions per AC characteristics table in the official datasheet.

Does W989D2DBJX6I TR support both CAS Latency 2 and CAS Latency 3?

Yes, W989D2DBJX6I TR supports programmable CAS Latency of 2 or 3, configured via the Mode Register Set (MRS) command. CL=2 reduces read access latency for time-critical operations like modem protocol processing, while CL=3 provides greater timing margin for stable operation under voltage droop or high-temperature conditions. Both settings are fully characterized in the datasheet's AC timing tables.

What package type and ball count does W989D2DBJX6I TR use?

W989D2DBJX6I TR uses a 90-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package, compliant with JEDEC MO-245. The ball map follows the x32 configuration detailed in Section 4.2 of the Winbond datasheet, with dedicated DQM0–DQM3 pins, separate VDDQ/VSSQ rails, and standard SDRAM command/address/data layout optimized for mobile PCB routing.

How does Partial Array Self Refresh (PASR) function in W989D2DBJX6I TR?

In W989D2DBJX6I TR, PASR is enabled via Extended Mode Register (EMR) bits [2:0], allowing refresh to be restricted to Bank 0 only, Banks 0+1, or all 4 banks. This reduces self-refresh current by up to 40% compared to full-array refresh-critical for applications like camera preview where only a subset of memory is actively used. Configuration requires EMRS command after initialization.

What is the deep power-down current specification for W989D2DBJX6I TR?

W989D2DBJX6I TR achieves a deep power-down current (Izz) of 10μA, measured 500ms after entry into Deep Power Down Mode. This ultra-low quiescent current enables multi-week battery retention in always-on standby states-such as GPS tracking or alarm monitoring-without compromising register state or requiring full reinitialization on wake-up.