Winbond Electronics Corporation W989D6DBGX6E TR

Overview

W989D6DBGX6E TR from Winbond is a 512Mb low-power synchronous DRAM (LPSDR) with x16 I/O configuration, operating at 1.8V supply and supporting 166MHz clock frequency. It features CAS Latency 2/3, 4-bank architecture, and deep power-saving modes including Deep Power Down (DPD) and Automatic Temperature Compensated Self Refresh (ATCSR), deployed in mobile handsets and digital cameras for memory-intensive, battery-sensitive operation.

For engineers reviewing the W989D6DBGX6E TR datasheet, W989D6DBGX6E TR pinout, W989D6DBGX6E TR application, or W989D6DBGX6E TR equivalent, key selection criteria include its 54-ball VFBGA package, -25°C to +85°C extended temperature range, PASR programmability, LVCMOS 1.8V interface compliance, and burst length support up to full page - all critical for portable SoC memory subsystem integration.

Technical Context

This LPSDR implements a fully synchronous interface synchronized to the rising edge of CLK, with command decoding controlled by CS, RAS, CAS, and WE signals. Its internal architecture includes four independent banks, row/column address multiplexing via A0–A12, and bank selection via BA0/BA1, enabling interleaved access and efficient refresh management.

It supports standard SDRAM command protocols including Bank Activate, Precharge All, Auto Refresh, and Self Refresh Entry/Exit, plus low-power extensions: Clock Suspend Mode, Power Down Mode, and Deep Power Down Mode - all entered and exited via CKE control with defined timing constraints (e.g., tRFC = 120ns for self-refresh exit).

Key Specifications

Pinout & Package

W989D6DBGX6E TR uses a 54-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.5mm ball pitch, optimized for low-inductance, high-density mobile PCB assembly. Pin assignments follow JEDEC-standard LPSDR x16 ballout.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power mobile SDRAM applications.

Compared with W989D6DBGX6I, W989D6DBGX6E TR trades 15°C lower minimum operating temperature for reduced procurement cost and broader availability in consumer supply chains; versus MT46H32M16LFCK-6 IT:F, it offers proven layout compatibility and lower BOM cost at 512Mb density, avoiding unnecessary overdesign.

Availability

W989D6DBGX6E TR is available at Aetrix Electronics and suitable for smartphone baseband subsystems, digital camera buffer memory, portable gaming console RAM, and industrial handheld terminal memory requiring stable component supply across multi-year production cycles.

Supply support for W989D6DBGX6E TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR Flash, DDR SDRAM, and low-power mobile memory products since 1987.

The W989D6DB family is part of Winbond's LPSDR product line, engineered specifically for battery-powered portable electronics demanding high memory bandwidth with ultra-low active and standby power consumption.

FAQ

What is the maximum clock frequency supported by the W989D6DBGX6E TR?

The W989D6DBGX6E TR supports a maximum clock frequency of 166MHz, corresponding to the "-6" speed grade in its ordering code. At this frequency, it achieves a peak data transfer rate of 332 MB/s on its 16-bit bus. This rating is guaranteed across the full -25°C to +85°C operating temperature range and under 1.8V ±0.15V supply conditions, as validated in Winbond's AC characteristics table (Section 9.6.1).

Does the W989D6DBGX6E TR support partial array self-refresh (PASR)?

Yes, the W989D6DBGX6E TR supports Programmable Partial Array Self Refresh (PASR), allowing the system to refresh only selected banks or sub-arrays instead of the entire 512Mb memory. This feature is configured via the Extended Mode Register and reduces self-refresh current proportionally - for example, refreshing one bank instead of four cuts typical self-refresh power by ~75%, significantly extending battery life in mobile applications where full memory utilization is intermittent.

What package type and dimensions does the W989D6DBGX6E TR use?

The W989D6DBGX6E TR uses a 54-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 6.0mm × 8.0mm × 0.65mm with 0.5mm ball pitch. This compact, low-profile package is designed for high-density mobile PCBs and complies with JEDEC MO-245 standards. The ballout matches standard LPSDR x16 configurations, enabling direct replacement in existing designs using compatible footprints.

How does the W989D6DBGX6E TR implement automatic temperature compensated self-refresh (ATCSR)?

The W989D6DBGX6E TR integrates an on-die temperature sensor that dynamically adjusts self-refresh current based on junction temperature. As described in Section 9.5 of the datasheet, ATCSR reduces refresh current at lower temperatures and increases it near the upper limit (+85°C), maintaining data retention reliability while minimizing average power draw. This eliminates the need for external thermal monitoring and manual refresh rate tuning in battery-operated systems.

Can the W989D6DBGX6E TR be used as a direct replacement for standard SDRAM in legacy designs?

No, the W989D6DBGX6E TR is not a drop-in replacement for standard SDRAM due to differences in power sequencing, CKE behavior, and low-power mode entry/exit timing. While it shares the same command set and x16 interface, its Deep Power Down and Clock Suspend modes require updated controller firmware to manage CKE assertion timing and post-exit stabilization delays (e.g., tRFC = 120ns after self-refresh exit). System validation is required before integration into non-LPSDR-optimized platforms.