Renesas X20C04P-15

Overview

X20C04P-15 from Xicor is a 512 × 8-bit nonvolatile static RAM (NOVRAM) integrating SRAM and EEPROM arrays in bit-for-bit overlay, operating at 5V ±10%, with 150 ns read cycle time, 5 µs recall, and 5 ms store latency - used in industrial control modules requiring persistent data retention after power loss.

For engineers reviewing the X20C04P-15 datasheet, X20C04P-15 pinout, X20C04P-15 application, or X20C04P-15 equivalent, this page delivers verified timing specs, JEDEC-compatible byte-wide memory interface behavior, power-up auto-recall functionality, and real-world endurance/reliability metrics for legacy system maintenance and BOM continuity planning.

Technical Context

The X20C04P-15 implements a dual-array architecture where 512 × 8-bit SRAM is directly mapped over an EEPROM array, enabling seamless store/recall operations via dedicated NE, WE, CE, and OE controls. Its 2-line control architecture eliminates bus contention by placing I/O pins in high-impedance state when CE or OE is HIGH or NE is LOW.

Power-up recall initiates automatically upon V_CC reaching ≥4.5 V, independent of control pin states, ensuring deterministic RAM initialization. Write protection includes V_CC sense (inhibit below 3.5 V), noise immunity (store/recall pulses <20 ns rejected), and mandatory RAM write prior to store cycle activation.

Key Specifications

Pinout & Package

Package: 28-Lead Plastic Dual In-Line Package (PDIP), Package Code P28, 0.600" wide body, hermetically sealed ceramic DIP alternative available as X20C04D-15.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile memory applications.

Compared with X20C04P-15, the X20C04D-15 offers superior environmental resilience but higher cost and larger footprint, while the X20C04J-15 enables modern manufacturing but requires PCB redesign - all share identical electrical behavior, timing, and pin function mapping.

Availability

X20C04P-15 is available at Aetrix Electronics and suitable for industrial control systems, medical instrumentation, avionics black boxes, and smart energy metering requiring stable component supply and long-term BOM continuity.

Supply support for X20C04P-15 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Xicor, Inc. was a fabless semiconductor company specializing in nonvolatile memory and programmable analog ICs, acquired by Intersil in 2001 and later integrated into Renesas Electronics.

The X20C04 product line was engineered specifically for systems demanding battery-free nonvolatile data retention, combining SRAM speed with EEPROM persistence in a single JEDEC-standard package.

FAQ

What is the guaranteed data retention period for X20C04P-15?

The X20C04P-15 guarantees ≥100 years of nonvolatile data retention at +25°C ambient temperature, as specified in the official datasheet. This applies to data stored in the EEPROM array after a successful store operation and assumes no exposure to absolute maximum stress conditions. The X20C04P-15 achieves this via floating-gate technology with advanced oxide quality control.

Does X20C04P-15 require an external backup battery for data retention?

No, the X20C04P-15 does not require an external backup battery. Its integrated EEPROM array retains data without power, and the power-on recall feature automatically restores EEPROM contents to SRAM within 5 µs of V_CC reaching 4.5 V. The X20C04P-15 is designed explicitly to eliminate battery dependencies in legacy and space-constrained systems.

Can X20C04P-15 be used as a direct replacement for standard 512 × 8 SRAMs?

Yes, the X20C04P-15 uses the JEDEC-approved pinout for byte-wide memories and is electrically compatible with industry-standard SRAMs, ROMs, EPROMs, and EEPROMs. However, its NE pin must be asserted (LOW) to access nonvolatile functions, and OE/CE/WE timing must comply with X20C04P-15-specific limits - the X20C04P-15 behaves identically to a standard SRAM when NE is HIGH.

What is the minimum V_CC level required for X20C04P-15 store operations?

The X20C04P-15 requires V_CC ≥4.5 V to perform store operations, as stated in Note (5) of the Store Cycle Limits table. Below 3.5 V, the V_CC sense circuit inhibits all functions including store, recall, and RAM access - this ensures data integrity during brownout conditions. The X20C04P-15 will not initiate a store cycle if V_CC falls outside the 4.5–5.5 V window.

How many store cycles can X20C04P-15 endure before EEPROM degradation?

The X20C04P-15 is rated for a minimum of 1,000,000 store cycles to the EEPROM array, as confirmed in the Endurance and Data Retention section. This endurance specification is guaranteed across the full industrial temperature range (–40°C to +85°C) and represents the number of times the entire 512-byte SRAM contents can be transferred to nonvolatile storage. The X20C04P-15 maintains full functionality up to this limit without parameter drift.