Diodes Incorporated ZTX415STOA

Overview

ZTX415STOA from Diodes Incorporated is an NPN silicon planar medium-power transistor engineered for controlled avalanche-mode operation, with BVCES > 260 V, BVCEO > 100 V, and 60 A peak avalanche current (20 ns pulse). It delivers 500 mA continuous collector current, 680 mW power dissipation, and operates across –55°C to +150°C, serving in high-voltage pulse generator and snubber circuit applications.

For engineers reviewing the ZTX415STOA datasheet, ZTX415STOA pinout, ZTX415STOA application, or ZTX415STOA equivalent, key selection criteria include avalanche energy handling, VCEO/VBCO ratings, thermal resistance (RθJA = 250 °C/W), hFE ≥ 25 at IC = 10 mA, and E-Line package compatibility with through-hole PCB layouts.

Technical Context

This transistor is specifically designed for repetitive avalanche operation-unlike standard switching transistors-featuring guaranteed BVCES > 260 V and pulsed IUSB up to 35 A under defined capacitive load conditions (VC = 250 V, CCE = 620 pF). Its rugged construction supports second-breakdown-limited energy absorption without destructive failure.

It exhibits low output capacitance (Cobo = 8 pF @ VCB = 20 V) and high transition frequency (fT = 40 MHz @ VCE = 20 V, IC = 10 mA), enabling fast switching in resonant and pulse-width modulated topologies where voltage overshoot control is critical.

Key Specifications

Pinout & Package

The ZTX415STOA uses the E-Line through-hole package (also known as TO-92 variant with extended leads), featuring a molded green plastic case rated UL 94V-0, matte tin-plated leads, and 159 mg typical weight. Pin identification follows standard E-Line top-view orientation: emitter (E), base (B), collector (C) left-to-right.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar avalanche-mode transistor applications.

Compared with ZTX453 and BUV27, the ZTX415STOA uniquely balances 100 V VCEO, 60 A avalanche capability, and E-Line through-hole compatibility - making it optimal for compact, medium-energy pulse circuits where reliability under repetitive overvoltage is mandatory.

Availability

ZTX415STOA is available at Aetrix Electronics and suitable for ignition systems, flyback snubbers, laser pulse drivers, and capacitor discharge circuits requiring stable component supply and traceable RoHS-compliant sourcing.

Supply support for ZTX415STOA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The ZTX415STOA belongs to Diodes' high-reliability bipolar transistor product line, developed specifically for ruggedized pulse and avalanche applications in automotive, industrial, and power conversion systems.

FAQ

Is ZTX415STOA rated for repetitive avalanche operation?

Yes. The datasheet explicitly states it is "specifically designed for avalanche mode operation" and specifies 60 A peak avalanche current with 20 ns pulse width. Electrical characteristics include guaranteed BVCES > 260 V and pulsed IUSB up to 35 A under defined capacitive load conditions - confirming validated repetitive avalanche capability.

What is the lead finish and solderability specification for ZTX415STOA?

ZTX415STOA features matte tin-plated leads, verified solderable per MIL-STD-202, Method 208. The E-Line package conforms to J-STD-020 moisture sensitivity Level 1, allowing unlimited floor life at ≤30°C/60% RH without baking prior to reflow or wave soldering.

Can ZTX415STOA replace ZTX453 in existing designs?

ZTX415STOA can replace ZTX453 where higher VCEO (100 V vs. 80 V) and greater avalanche current (60 A vs. 40 A) are beneficial. However, due to differences in hFE distribution and saturation voltage, circuit validation - especially base drive sizing and thermal margin - is required before drop-in substitution.

Does ZTX415STOA require a heatsink in typical operation?

No heatsink is required for continuous IC ≤ 500 mA at TA = 25°C with standard PCB layout (15 mm × 15 mm 1 oz Cu). RθJA = 250 °C/W yields ~170°C junction rise at full PD (680 mW); derating is necessary above 70°C ambient or under pulsed avalanche duty cycles exceeding 1% duty factor.