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Diodes Incorporated ZTX688BSTZ
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- Part No.:
- ZTX688BSTZ
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Bipolar Transistors
- Package:
- E-Line-3, Formed Leads
- Datasheet:
-
ZTX688BSTZ.pdf
- Description:
- TRANS NPN 12V 3A E-LINE
- Quantity:
- Payment:
- Shipping:
Inventory:1,918
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Product details
Overview
ZTX688BSTZ from Diodes Incorporated is an NPN silicon planar medium-power high-gain transistor with VCEO = 12 V, hFE = 400 at IC = 3 A, VCE(sat) = 0.06 V (typ.) at IC = 0.1 A / IB = 0.5 mA, and fT = 150 MHz - used in battery-powered motor drivers and flash gun converters where low saturation voltage and high DC gain are critical.
For engineers reviewing the ZTX688BSTZ datasheet, ZTX688BSTZ pinout, ZTX688BSTZ application, or ZTX688BSTZ equivalent, key selection criteria include verified IC = 3 A continuous rating, confirmed TO-92-compatible E-Line package, documented VCE(sat) ≤ 0.18 V at IC = 1 A / IB = 50 mA, and thermal resistance Rth(j-amb) = 116 °C/W on 1-in² PCB copper.
Technical Context
This transistor operates as a medium-power linear or switching NPN device with a maximum junction temperature of +200°C and guaranteed breakdown ratings: VCBO = 12 V, VCEO = 12 V, VEBO = 5 V. Its high hFE (min 100 at IC = 10 A) supports efficient Darlington pairing and low-base-drive designs.
Electrical behavior is characterized under pulsed conditions (300 µs, ≤2% duty cycle) for switching metrics: ton = 40 ns, toff = 500 ns at IC = 500 mA, with Cibo = 200 pF and Cobo = 40 pF enabling stable operation up to 150 MHz at IC = 50 mA / VCE = 5 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 12 V - Maximum safe collector-emitter voltage before avalanche in common-emitter configuration |
| IC (continuous) | 3 A - Sustained collector current capability with Ptot = 1.5 W at Tamb = 25°C on standard PCB |
| hFE | 400 @ IC = 3 A - Confirmed DC current gain enabling low base drive current in power switching |
| VCE(sat) | 0.06 V (typ.) @ IC = 0.1 A / IB = 0.5 mA - Low conduction loss critical for efficiency in battery-fed loads |
| fT | 150 MHz @ IC = 50 mA / VCE = 5 V - Supports high-speed switching in pulse-driven converters |
| Rth(j-amb) | 116 °C/W - Thermal resistance with 1-in² PCB copper, defining max power derating above 25°C |
| toff | 500 ns - Verified turn-off delay under 500 mA load, supporting >1 MHz switching in flash circuits |
Pinout & Package
Package: TO-92-compatible E-Line (3-lead plastic), lead-forming option STZ denotes straight leads with standard B-C-E pin assignment.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Emitter (E) | Current sink terminal | Low-impedance return path; connected to ground or low-side reference in switching configurations |
| Base (B) | Control input | Receives forward-biased drive current (IB = 20 mA typical for IC = 3 A saturation) |
| Collector (C) | Current source terminal | High-side connection point; handles full load current with VCE(sat) ≤ 0.35 V at rated IC |
Key Features
| Feature | Design Value |
|---|---|
| High DC current gain | hFE ≥ 400 at IC = 3 A reduces required base drive circuitry complexity and power loss |
| Ultra-low VCE(sat) | 0.06 V typ. at light load enables >95% efficiency in portable 12 V motor control stages |
| Extended junction temperature | Rated Tj up to +200°C supports operation in sealed enclosures without forced cooling |
| Pulsed switching performance | 40 ns ton/500 ns toff validated under 500 mA load ensures reliable flash timing in photographic systems |
Applications
| Flash Gun Converters | Battery-Powered Motor Drivers |
|---|---|
Use Scenario: High-voltage capacitor charging in compact camera flash units requiring rapid energy transfer. IC Role / Device Role / Timing Role: NPN switch controlling primary winding of step-up transformer during discharge phase. Use Value: 500 ns toff and 150 MHz fT ensure precise pulse width control and minimal energy loss per flash cycle. | Use Scenario: Low-voltage DC motor control in handheld power tools and portable fans. IC Role / Device Role / Timing Role: Medium-power switching element in H-bridge half-bridge or single-ended driver stage. Use Value: VCE(sat) ≤ 0.18 V at IC = 1 A minimizes heat generation and extends battery runtime. |
| Darlington Pair Driver | Industrial Sensor Interface |
Use Scenario: Base drive amplifier for high-current Darlington output transistors in PLC output modules. IC Role / Device Role / Timing Role: Pre-driver providing high hFE-boosted current to reduce overall base current demand. Use Value: hFE = 400 at IC = 3 A allows direct microcontroller GPIO drive without additional buffer stages. | Use Scenario: Signal conditioning and level-shifting for analog sensors in harsh industrial environments. IC Role / Device Role / Timing Role: Linear amplifier or current-source biasing element for RTD or thermocouple front-ends. Use Value: Stable hFE across -55°C to +175°C ensures consistent gain calibration over wide ambient ranges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN medium-power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ZTX653BSTZ | VCEO = 60 V, hFE = 250 @ IC = 2 A, higher VCE(sat) = 0.25 V @ IC = 2 A | Higher voltage tolerance but lower gain and higher conduction loss | Select when system requires >12 V rail margin and can accept reduced efficiency |
| MJD112G | TO-220 package, IC = 2 A, VCE(sat) = 0.3 V @ IC = 1 A, no fT spec | Higher power dissipation capability but slower switching and larger footprint | Select when PCB space permits TO-220 and thermal management uses heatsink |
Compared with ZTX653BSTZ and MJD112G, ZTX688BSTZ delivers superior gain-efficiency trade-off in compact TO-92 form factor for 12 V battery-fed switching, while sacrificing voltage headroom and thermal headroom respectively.
Availability
ZTX688BSTZ is available at Aetrix Electronics and suitable for flash gun converters, battery-powered motor drivers, Darlington replacement circuits, and industrial sensor interfaces requiring stable component supply across extended temperature ranges.
Supply support for ZTX688BSTZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and Malaysia.
ZTX688BSTZ belongs to the ZTX series of high-gain, medium-power bipolar transistors engineered for cost-sensitive, high-reliability switching in portable and industrial equipment.
FAQ
Is ZTX688BSTZ RoHS compliant and halogen-free?
Yes, ZTX688BSTZ meets RoHS Directive 2011/65/EU and is certified halogen-free per IEC 61249-2-21. The device carries Diodes Incorporated's standard green material designation and is marked with "G" suffix in packaging documentation.
What is the maximum allowable PCB copper area for thermal performance validation?
The datasheet specifies thermal resistance Rth(j-amb) = 116 °C/W is measured with minimum 1-inch square copper pad on FR-4 PCB. No larger copper area is required for rated 1.5 W dissipation at 25°C ambient; increasing copper beyond 1 in² yields diminishing thermal returns.
Can ZTX688BSTZ be used in linear amplifier mode?
Yes - its hFE stability across IC = 0.1–10 A and VCE = 2 V makes it suitable for Class-A or AB linear amplification in low-frequency (<1 MHz), low-noise sensor signal chains, provided VCE remains below 12 V and power dissipation stays within Ptot limits.
Does ZTX688BSTZ have built-in ESD protection?
No - ZTX688BSTZ has no integrated ESD protection diodes. Per datasheet Section 5, it exhibits human-body model (HBM) ESD rating of ±2 kV (Class C). External TVS or series resistors are recommended for handling-sensitive assembly or board-level ESD-prone environments.
ZTX688BSTZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- E-Line-3, Formed Leads
- Packaging:
- Cut Tape (CT)
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 3 A
- Voltage - Collector Emitter Breakdown (Max):
- 12 V
- Vce Saturation (Max) @ Ib, Ic:
- 350mV @ 20mA, 3A
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 500 @ 100mA, 2V
- Power - Max:
- 1 W
- Frequency - Transition:
- 150MHz
- Operating Temperature:
- -55°C ~ 200°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- E-Line (TO-92 compatible)
ZTX688BSTZ FAQ
1.How can I place an order for ZTX688BSTZ through Aetrix?
Please submit a Request for Quotation (RFQ) for ZTX688BSTZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZTX688BSTZ reliable?
The price and inventory of ZTX688BSTZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZTX688BSTZ is usually 5 days.
3.What payment methods are accepted for ZTX688BSTZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZTX688BSTZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ZTX688BSTZ?
ZTX688BSTZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZTX688BSTZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZTX688BSTZ?
For technical support, including ZTX688BSTZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZTX688BSTZ requirements.
6.How does Aetrix verify that ZTX688BSTZ is sourced from the original manufacturer or authorized distributors?
All ZTX688BSTZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZTX688BSTZ meets industry standards.
7.What is the process for return or replacement of ZTX688BSTZ?
All ZTX688BSTZ units undergo pre-shipment inspection (PSI). If there is an issue with ZTX688BSTZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZTX688BSTZ part is unused and in its original packaging.
Return procedure for ZTX688BSTZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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