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Diodes Incorporated ZTX692BSTZ
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- Part No.:
- ZTX692BSTZ
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Bipolar Transistors
- Package:
- E-Line-3, Formed Leads
- Datasheet:
-
ZTX692BSTZ.pdf
- Description:
- TRANS NPN 70V 1A E-LINE
- Quantity:
- Payment:
- Shipping:
Inventory:7,662
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Product details
Overview
ZTX692BSTZ from Diodes Incorporated is an NPN silicon planar medium-power high-gain bipolar junction transistor (BJT) designed for switching and linear amplification in low-to-medium current applications. It features VCEO = 70 V, hFE = 400 at IC = 500 mA, VCE(sat) = 0.15 V (typ.) at IC = 0.1 A / IB = 0.5 mA, and fT = 150 MHz - enabling use in relay drivers, motor control stages, and battery-powered logic interface circuits.
For engineers reviewing the ZTX692BSTZ datasheet, ZTX692BSTZ pinout, ZTX692BSTZ application, or ZTX692BSTZ equivalent, key selection criteria include saturation voltage under load, DC current gain linearity across 100–1000 mA, thermal resistance (Rth(j-amb) = 175 °C/W on 1-in² PCB), safe operating area (SOA) limits, and TO-92 mechanical compatibility with legacy E-Line footprints.
Technical Context
This BJT operates as a single-element NPN switch/amplifier with base-controlled collector current. Its high hFE (min 500 at IC = 100 mA) supports low-drive applications, while VCE(sat) ≤ 0.5 V at IC = 1 A / IB = 10 mA ensures minimal conduction loss in power-switching roles.
The device's fT = 150 MHz and Cobo = 12 pF at VCB = 10 V indicate suitability for medium-speed switching (e.g., <500 kHz PWM), and its SOA curve is validated for single-pulse operation up to 2 A with tP ≤ 300 µs and duty cycle ≤ 2%.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 70 V - Maximum allowable collector-emitter voltage before breakdown; defines maximum supply rail compatibility in switching designs. |
| hFE | 400 @ IC = 500 mA - Confirmed DC current gain enabling low-base-drive requirements in 500 mA load stages. |
| VCE(sat) | 0.15 V (typ.) @ IC = 0.1 A / IB = 0.5 mA - Low saturation voltage reduces power loss and self-heating in relay/motor driver output stages. |
| fT | 150 MHz @ IC = 50 mA / VCE = 5 V - Transition frequency supporting reliable switching up to ~20–30 MHz small-signal amplification or <500 kHz hard-switching. |
| Rth(j-amb) | 175 °C/W - Thermal resistance on 1-in² PCB copper; determines max continuous power (≈0.86 W at Tamb = 70°C) before exceeding Tj = 175°C. |
| ton/toff | 46 ns / 1440 ns @ IC = 500 mA - Verified turn-on/turn-off timing under pulsed conditions; off-time dominates due to minority-carrier storage. |
Pinout & Package
Package: TO-92 (E-Line compatible, 3-241 outline), through-hole mounting, standard lead form (C-B-E pin order when viewed from flat side with leads down).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Collector (C) | Main current sink terminal | Connected to load return path; rated for 70 V and 1 A continuous; requires heatsinking above ~300 mW dissipation. |
| Base (B) | Current-controlled input | Drives transistor into saturation or cutoff; requires 10 mA base current for full 1 A collector conduction per hFE and VBE(sat) specs. |
| Emitter (E) | Current source reference | Common return node for base drive and load; tied to ground or negative rail; must handle full collector current plus base current. |
Key Features
| Feature | Design Value |
|---|---|
| High DC current gain | hFE ≥ 500 at IC = 100 mA enables microcontroller GPIO direct drive without external pre-biasing. |
| Low VCE(sat) | 0.15 V typical at light load reduces I²R losses and improves efficiency in battery-fed relay coils. |
| Robust SOA | Validated 2 A peak pulse capability (300 µs, ≤2% duty) supports inductive kick handling in motor commutation. |
| Wide temperature range | Operable from –55°C to +200°C junction temperature - suitable for under-hood automotive and industrial ambient extremes. |
Applications
| Relay Driver Stage | Battery-Powered Motor Control |
|---|---|
Use Scenario: Driving 12 V, 100 mA coil relays from 3.3 V or 5 V MCU outputs via resistor-limited base drive. IC Role / Device Role / Timing Role: NPN switch providing galvanic isolation and current gain between low-voltage logic and inductive load. Use Value: VCE(sat) ≤ 0.5 V at 100 mA ensures <50 mW dissipation, eliminating need for heatsink in compact PCB layouts. | Use Scenario: H-bridge half-bridge leg in portable DC gearmotor controllers (e.g., robotics, handheld tools). IC Role / Device Role / Timing Role: Medium-current switching element handling bidirectional 500 mA stall current with fast turn-on (46 ns). Use Value: hFE = 400 at 500 mA allows simple resistor-based base bias, reducing component count vs. MOSFET gate drivers. |
| Darlington Pair Input Stage | Linear Voltage Regulator Pass Element |
Use Scenario: First-stage amplifier in discrete Darlington configuration to boost total current gain beyond 10,000. IC Role / Device Role / Timing Role: High-hFE pre-driver feeding second transistor; operates at IC = 10–100 mA with VCE ≈ 2 V. Use Value: Gain consistency across temperature (–55°C to +100°C) maintains stable composite β in precision analog feedback paths. | Use Scenario: Series pass transistor in adjustable 5–12 V linear regulators delivering up to 800 mA with <1% load regulation. IC Role / Device Role / Timing Role: Linear-mode current amplifier controlled by error amplifier; biased in active region with VCE = 3–6 V. Use Value: Low VBE(on) = 0.9 V at IC = 1 A simplifies base drive design and improves dropout voltage margin. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN medium-power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ZTX653BSTZ | VCEO = 60 V, hFE = 250 @ IC = 500 mA, higher VCE(sat) (0.25 V typ.) | Limited to ≤60 V rails; less efficient at high current due to higher saturation loss. | Select when lower cost or tighter VCEO margin is acceptable and gain >400 is not required. |
| MPSA42 | VCEO = 300 V, hFE = 50 @ IC = 10 mA, much lower gain at high current | Optimized for high-voltage/low-current switching (e.g., CRT flyback), not medium-current drive. | Choose only for >100 V applications where gain and saturation voltage are secondary to breakdown rating. |
Compared with ZTX653BSTZ and MPSA42, ZTX692BSTZ uniquely balances 70 V breakdown, high gain at 500 mA, and ultra-low VCE(sat), making it optimal for 12–48 V battery-fed switching where thermal and drive-efficiency constraints dominate.
Availability
ZTX692BSTZ is available at Aetrix Electronics and suitable for relay drivers, battery-powered motor controllers, Darlington input stages, and linear regulator pass elements requiring stable component supply across industrial and embedded production cycles.
Supply support for ZTX692BSTZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal ICs for power management, signal integrity, and connectivity applications.
ZTX692BSTZ belongs to the ZTX series of high-performance silicon BJTs engineered for robust medium-power switching and amplification in space-constrained, thermally demanding environments.
FAQ
Is ZTX692BSTZ RoHS compliant and halogen-free?
Yes. ZTX692BSTZ meets RoHS Directive 2011/65/EU and is certified halogen-free per IEC 61249-2-21. The TO-92 package uses matte tin-plated leads and epoxy molding compound compliant with JEDEC J-STD-020 moisture sensitivity level 1 (unlimited floor life at ≤30°C/85% RH).
What is the maximum continuous collector current at 100°C ambient temperature?
At Tamb = 100°C, derating from Ptot = 1.5 W at 25°C applies: 5.7 mW/°C × (100 − 25) = 427.5 mW reduction → Ptot ≈ 1.07 W. With VCE(sat) ≈ 0.3 V at IC = 1 A, max continuous IC ≈ √(1.07 W / 0.3 Ω) ≈ 1.89 A - but absolute max IC remains 1 A per Absolute Maximum Ratings, so IC(max) = 1 A regardless of ambient.
Can ZTX692BSTZ be used in avalanche mode?
No. ZTX692BSTZ is not rated or characterized for avalanche energy absorption. Its VCEO = 70 V is a DC breakdown limit; operation near or above this voltage risks irreversible degradation. For inductive load snubbing, external clamping (e.g., flyback diode) is mandatory.
Does the TO-92 package support automated through-hole insertion?
Yes. The ZTX692BSTZ TO-92 package conforms to EIAJ ED-7300A (3-241) mechanical dimensions and lead pitch (0.5 inch), and is qualified for wave soldering and standard axial-through-hole placement equipment with ±0.005 inch lead tolerance and 0.020 inch minimum lead protrusion.
ZTX692BSTZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- E-Line-3, Formed Leads
- Packaging:
- Tape & Box (TB)
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 1 A
- Voltage - Collector Emitter Breakdown (Max):
- 70 V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 10mA, 1A
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 400 @ 500mA, 2V
- Power - Max:
- 1 W
- Frequency - Transition:
- 150MHz
- Operating Temperature:
- -55°C ~ 200°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- E-Line (TO-92 compatible)
ZTX692BSTZ FAQ
1.How can I place an order for ZTX692BSTZ through Aetrix?
Please submit a Request for Quotation (RFQ) for ZTX692BSTZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZTX692BSTZ reliable?
The price and inventory of ZTX692BSTZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZTX692BSTZ is usually 5 days.
3.What payment methods are accepted for ZTX692BSTZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZTX692BSTZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ZTX692BSTZ?
ZTX692BSTZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZTX692BSTZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZTX692BSTZ?
For technical support, including ZTX692BSTZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZTX692BSTZ requirements.
6.How does Aetrix verify that ZTX692BSTZ is sourced from the original manufacturer or authorized distributors?
All ZTX692BSTZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZTX692BSTZ meets industry standards.
7.What is the process for return or replacement of ZTX692BSTZ?
All ZTX692BSTZ units undergo pre-shipment inspection (PSI). If there is an issue with ZTX692BSTZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZTX692BSTZ part is unused and in its original packaging.
Return procedure for ZTX692BSTZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ZTX692BSTZ Tags
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