Diodes Incorporated ZTX751QSTZ

Overview

ZTX751QSTZ from Diodes Incorporated is a 60V PNP medium-power transistor in E-Line (TO-92 compatible) package, rated for -2A continuous collector current, -6A peak pulse current, and 1W power dissipation at +25°C ambient. It features low V_CE(sat) of -150 mV @ -1A/-100mA, operates up to +200°C junction temperature, and is AEC-Q101 qualified for automotive applications such as body control modules and lighting drivers.

For engineers reviewing the ZTX751QSTZ datasheet, ZTX751QSTZ pinout, ZTX751QSTZ application, or ZTX751QSTZ equivalent, key selection criteria include its -60V V_CEO, -2A I_C, thermal robustness to +200°C, AEC-Q101 qualification, and E-Line mechanical compatibility with TO-92 footprint constraints in space-constrained automotive PCBs.

Technical Context

This PNP bipolar junction transistor delivers high-current switching capability with verified saturation performance: V_CE(sat) = -150 mV at I_C = -1A / I_B = -100mA and -300 mV at I_C = -2A / I_B = -200mA. Its h_FE ranges from 70 to 300 across I_C = -50mA to -2A, supporting stable DC gain in linear and saturated switching modes.

Thermal design is enabled by R_θJA = 175°C/W (min pad layout) and R_θJL = 70°C/W, allowing reliable operation up to T_J = +200°C. The device meets JEDEC ESD HBM ≥4 kV and AEC-Q101 stress requirements, confirming suitability for automotive under-hood environments.

Key Specifications

Pinout & Package

E-Line (TO-92 compatible) package with molded green plastic case, matte tin-plated leads, and 0.159 g mass. UL 94V-0 flammability rating and lead-free/RoHS compliance confirmed.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP medium-power transistor applications.

Compared with MJD2955T4G and BC807-25,215, ZTX751QSTZ uniquely balances AEC-Q101 compliance, -60V rating, -2A current, and E-Line footprint-making it optimal for mid-power automotive switches where TO-220 is oversized and SOT-23 under-rates.

Availability

ZTX751QSTZ is available at Aetrix Electronics and suitable for automotive body control modules, LED lighting drivers, industrial power supply enable circuits, and motor control feedback circuits requiring stable component supply with AEC-Q101 assurance.

Supply support for ZTX751QSTZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and consumer markets.

ZTX751 belongs to Diodes' automotive-grade bipolar transistor product line, designed specifically for robust, high-temperature switching in body electronics and lighting systems where AEC-Q101 compliance and thermal resilience are mandatory.

FAQ

What is the difference between ZTX751QSTZ and standard ZTX751?

ZTX751QSTZ is the automotive-grade variant with AEC-Q101 qualification and PPAP capability, while standard ZTX751 is intended for commercial applications. Electrically and thermally identical, the QSTZ version undergoes additional stress testing and traceability controls required for automotive production.

Can ZTX751QSTZ replace a TO-92 PNP transistor in existing designs?

Yes-ZTX751QSTZ uses the E-Line package, which is mechanically compatible with TO-92 footprints. Pinout (E-C-B viewed from flat side) matches standard TO-92 PNP orientation, enabling drop-in replacement without PCB redesign.

What is the recommended minimum base drive current for full saturation?

For full saturation at I_C = -2A, the datasheet specifies I_B = -200mA. With h_FE ≥80 at this condition, a minimum base drive of -200mA ensures V_CE(sat) ≤ -300 mV, maintaining low conduction loss and thermal stability.

Is ZTX751QSTZ suitable for linear (analog) operation?

Yes-its h_FE remains stable from -50mA to -2A, and V_CE(sat) is well-characterized across operating points. However, power dissipation must be limited to 1W with appropriate heatsinking or PCB copper area to avoid exceeding T_J = +200°C in linear mode.