Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated ZTX753QSTZ

Part No.:
ZTX753QSTZ
Manufacturer:
Diodes Incorporated
Category:
Single Bipolar Transistors
Package:
E-Line-3, Formed Leads
Datasheet:
AetrixZTX753QSTZ.pdf
Description:
TRANS PNP 100V 2A E-LINE
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,426

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

ZTX753QSTZ from Diodes Incorporated is a PNP silicon planar medium-power bipolar junction transistor (BJT) designed for linear amplification and switching in industrial control, power supply regulation, and relay driver circuits. It delivers -100 V VCEO, -2 A continuous collector current, 140 MHz fT, -0.3 V typical VCE(sat) at -2 A/–200 mA drive, and operates up to +200°C junction temperature.

For engineers reviewing the ZTX753QSTZ datasheet, ZTX753QSTZ pinout, ZTX753QSTZ application, or ZTX753QSTZ equivalent, key selection criteria include verified PNP high-voltage switching capability, thermal performance under sustained 2 A load, TO-92-compatible footprint compatibility, and saturation voltage behavior across –1 A to –2 A operating range.

Technical Context

The ZTX753QSTZ implements a planar epitaxial PNP structure optimized for medium-power DC and pulsed switching. Its -120 V VCBO and -100 V VCEO support operation in negative-rail high-voltage stages, while its 140 MHz transition frequency enables reliable performance in audio-frequency and low-MHz switching applications.

Thermal design is enabled by Rth(j–amb) = 116 °C/W on PCB with ≥1 in² copper and Rth(j–case) = 70 °C/W, allowing stable 1 W dissipation at 25°C ambient with defined derating above that point. Switching times are specified as 40 ns ton and 600 ns toff under standardized -500 mA load conditions.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO-100 V - Maximum safe collector-emitter voltage before breakdown in common-emitter configuration.
IC (cont.)-2 A - Continuous DC collector current rating; defines maximum steady-state load-handling capacity.
fT140 MHz - Transition frequency at which current gain drops to unity; sets upper limit for small-signal amplification bandwidth.
VCE(sat)-0.3 V (typ.) at IC = -2 A, IB = -200 mA - Low saturation voltage minimizes conduction loss in switching applications.
Rth(j–case)70 °C/W - Junction-to-case thermal resistance; used with heatsink data to calculate real-world temperature rise under load.
toff600 ns - Turn-off delay time under defined pulse conditions; critical for timing-critical switching and PWM duty cycle fidelity.

Pinout & Package

Package: TO-92 compatible molded plastic case with E-line marking (Emitter-Base-Collector pin order). Standard lead form, through-hole mounting, JEDEC TO-92 compliant footprint.

Pin/TerminalCircuit RoleDesign Meaning
Emitter (E)Current sink terminal for PNP deviceConnected to most positive rail in common-emitter switch; carries full load current.
Base (B)Control input for minority-carrier injectionReceives negative drive current to turn on; requires –200 mA for full saturation at –2 A IC.
Collector (C)Current source terminal for PNP deviceConnected to load and negative supply; voltage swing limited to –100 V max relative to emitter.

Key Features

FeatureDesign Value
High VCEO rating-100 V enables use in negative-rail industrial supplies and motor-control H-bridge high-side drivers.
Low VCE(sat)-0.3 V typ. at –2 A reduces power loss and thermal stress in linear-regulator pass elements.
140 MHz fTSupports stable audio-amplifier stages and fast-switching DC-DC converter control loops.
200°C max TjEnables operation in sealed enclosures or high-ambient environments without forced cooling.
TO-92 compatibilityDirect replacement for legacy PNP transistors in existing through-hole designs without board rework.

Applications

Industrial Relay DriversLinear Voltage Regulators

Use Scenario: Driving 24 V DC relays with coil currents up to 1.8 A in PLC output modules.

IC Role / Device Role / Timing Role: PNP switch controlling relay coil current path from positive rail to ground.

Use Value: –100 V VCEO withstands inductive kickback; –0.3 V VCE(sat) limits self-heating during continuous hold state.

Use Scenario: Pass transistor in adjustable negative-output LDO regulators delivering –5 V to –15 V at up to 1.5 A.

IC Role / Device Role / Timing Role: Series pass element regulating output by modulating emitter-collector conduction.

Use Value: High hFE (>125 at IC = –1 A) ensures stable loop gain; low VCE(sat) improves efficiency at full load.

DC Motor Direction ControlHigh-Voltage Signal Inversion

Use Scenario: High-side switch in half-bridge motor driver for bidirectional 24 V brushed DC motors.

IC Role / Device Role / Timing Role: PNP-based high-side switch enabling current sourcing to motor winding.

Use Value: –120 V VCBO prevents breakdown during flyback transients; 600 ns toff supports PWM frequencies up to ~100 kHz.

Use Scenario: Level-shifting inverter stage converting TTL/CMOS logic signals to –5 V to –12 V swing for analog interface circuits.

IC Role / Device Role / Timing Role: Common-emitter amplifier providing inverted, amplified negative-voltage output.

Use Value: 140 MHz fT preserves edge integrity up to 10 MHz; –100 V VCEO accommodates wide output swing range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP medium-power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MJD2955GTO-220 package, higher Ptot (90 W), lower fT (100 kHz), same VCEO (–70 V)Requires heatsink; suited for >5 A continuous loads but not high-frequency switchingSelect when thermal budget allows larger package and switching speed < 100 kHz is acceptable.
ZTX757Same TO-92 package, higher VCEO (–120 V), same IC (–2 A), higher VCE(sat) (–0.5 V typ. at –2 A)Improved voltage margin but increased conduction loss in high-current linear operationSelect when system transient voltage exceeds –100 V but efficiency at full load is secondary to robustness.

Compared with MJD2955G and ZTX757, the ZTX753QSTZ uniquely balances TO-92 mountability, 140 MHz bandwidth, and –0.3 V saturation voltage-making it optimal for space-constrained, medium-speed, medium-power PNP switching where thermal mass is limited and signal fidelity matters.

Availability

ZTX753QSTZ is available at Aetrix Electronics and suitable for industrial relay drivers, linear voltage regulators, DC motor direction control, and high-voltage signal inversion requiring stable component supply and long-term manufacturability.

Supply support for ZTX753QSTZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for industrial, automotive, and computing markets.

The ZTX series targets medium-power bipolar transistors for ruggedized linear and switching applications, emphasizing voltage robustness, thermal resilience, and direct drop-in compatibility with legacy TO-92 designs.

FAQ

What is the maximum safe operating temperature for ZTX753QSTZ?

The ZTX753QSTZ has a specified junction temperature range of –55°C to +200°C. Its absolute maximum storage and operating temperature is +200°C, validated per JEDEC JESD22-A103. Derating begins at +25°C ambient, with thermal resistance to ambient (PCB-mounted) at 116 °C/W. Sustained operation above 150°C requires careful thermal modeling and validation.

Is ZTX753QSTZ pin-compatible with ZTX752?

Yes, ZTX753QSTZ and ZTX752 share identical TO-92-compatible pinout (E-B-C), package dimensions, and mechanical footprint. However, ZTX753 offers higher voltage ratings (–120 V VCBO, –100 V VCEO) and identical fT (140 MHz), making it a direct upgrade where enhanced breakdown margin is required without layout changes.

Can ZTX753QSTZ be used in avalanche mode?

No, ZTX753QSTZ is not rated or characterized for controlled avalanche operation. Its datasheet specifies only standard DC and pulsed switching parameters. The device lacks guaranteed avalanche energy (EAS) rating or SOA curves supporting repetitive avalanche, and operation beyond VCEO or VCBO limits risks irreversible degradation.

What is the typical DC current gain (hFE) at IC = –1 A?

At IC = –1 A, VCE = –2 V, and TA = 25°C, the typical hFE of ZTX753QSTZ is 175, with minimum guaranteed value of 125. This gain remains stable across the –0.01 A to –1 A range, supporting predictable biasing in both linear and saturated switching configurations.

ZTX753QSTZ Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
E-Line-3, Formed Leads
Packaging:
Tape & Box (TB)
Product Status:
Obsolete
Transistor Type:
PNP
Current - Collector (Ic) (Max):
2 A
Voltage - Collector Emitter Breakdown (Max):
100 V
Vce Saturation (Max) @ Ib, Ic:
500mV @ 200mA, 2A
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
-
Power - Max:
1 W
Frequency - Transition:
140MHz
Operating Temperature:
-55°C ~ 200°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
E-Line (TO-92 compatible)

ZTX753QSTZ FAQ

1.How can I place an order for ZTX753QSTZ through Aetrix?

Please submit a Request for Quotation (RFQ) for ZTX753QSTZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZTX753QSTZ reliable?

The price and inventory of ZTX753QSTZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZTX753QSTZ is usually 5 days.

3.What payment methods are accepted for ZTX753QSTZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZTX753QSTZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZTX753QSTZ?

ZTX753QSTZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZTX753QSTZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZTX753QSTZ?

For technical support, including ZTX753QSTZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZTX753QSTZ requirements.

6.How does Aetrix verify that ZTX753QSTZ is sourced from the original manufacturer or authorized distributors?

All ZTX753QSTZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZTX753QSTZ meets industry standards.

7.What is the process for return or replacement of ZTX753QSTZ?

All ZTX753QSTZ units undergo pre-shipment inspection (PSI). If there is an issue with ZTX753QSTZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZTX753QSTZ part is unused and in its original packaging.

Return procedure for ZTX753QSTZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

ZTX753QSTZ Tags

  • ZTX753QSTZ
  • ZTX753QSTZ PDF
  • ZTX753QSTZ Datasheet
  • ZTX753QSTZ Specifications
  • ZTX753QSTZ Images
  • Diodes Incorporated
  • Diodes Incorporated ZTX753QSTZ
  • Buy ZTX753QSTZ
  • ZTX753QSTZ Price
  • ZTX753QSTZ Distributor
  • ZTX753QSTZ Supplier
  • ZTX753QSTZ Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER